IHP10T120
Soft Switching Series
Power Semiconductors
8 Rev. 2.4 Sept. 07
E, SWITCHING ENERGY LOSSES
5A 10A 15A
,0mJ
,0mJ
,0mJ
,0mJ
E
ts
*
E
off
*) E
on
and E
ts
include losses
due to diode recovery
E
on
*
E, SWITCHING ENERGY LOSSES
5Ω 50Ω 100Ω 150Ω 200Ω
0,0 mJ
0,4 mJ
0,8 mJ
1,2 mJ
1,6 mJ
2,0 mJ
2,4 mJ
2,8 mJ
3,2 mJ
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
I
C
, COLLECTOR CURRENT
R
G
, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
J
=150°C, V
CE
=600V,
V
GE
=0/15V, R
G
=81,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
J
=150°C, V
CE
=600V,
V
GE
=0/15V, I
C
=8A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
50°C 100°C 150°C
0,0mJ
0,5mJ
1,0mJ
1,5mJ
2,0mJ
2,5mJ
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
E, SWITCHING ENERGY LOSSES
400V 500V 600V 700V 800V
0mJ
1mJ
2mJ
3mJ
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
T
J
, JUNCTION TEMPERATURE V
CE
, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
CE
=600V, V
GE
=0/15V, I
C
=8A,
R
G
=81,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter voltage
(inductive load, T
J
=150°C, V
GE
=0/15V, I
C
=8A,
R
G
=81,
Dynamic test circuit in Figure E)
