IHP10T120
Soft Switching Series
Power Semiconductors
10 Rev. 2.4 Sept. 07
Z
thJC
, TRANSIENT THERMAL RESISTANCE
10
s100
s 1ms 10ms 100ms
10
-2
K/W
10
-1
K/W
10
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
Z
thJC
, TRANSIENT THERMAL RESISTANCE
10
s 100
s 1ms 10ms 100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
t
P
, PULSE WIDTH t
P
, PULSE WIDTH
Figure 23. IGBT transient thermal
resistance as a function of pulse width
(D = t
p
/ T)
Figure 24. Diode transient thermal
impedance as a function of pulse width
(D=t
P
/T)
t
rr
, REVERSE RECOVERY TIME
0A/µs 400A/µs 800A/µs 1200A/
50ns
100ns
150ns
200ns
250ns
300ns
350ns
400ns
450ns
500ns
4A
I
F
=8A
2A
Q
rr
, REVERSE RECOVERY CHARGE
0A/µs 400A/µs 800A/µs 1200A/
400nC
450nC
500nC
550nC
600nC
650nC
700nC
750nC
800nC
850nC
4A
I
F
=8A
2A
di
F
/dt, DIODE CURRENT SLOPE
di
F
/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(V
R
=600V, I
F
=8A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current slope
(V
R
=800V, T
J
= 125°C,
Dynamic test circuit in Figure E)
R ,(K/W)
τ
, (s)
0.1759 8.688*10
-2
0.3291 1.708*10
-2
0.2886 1.259*10
-3
0.1189 1.898*10
-4
C
1
=
1
/R
1
R
1
R
2
C
2
=
2
R
2
R ,(K/W)
τ
, (s)
0.500 4.529*10
-2
0.578 6.595*10
-3
1.036 1.003*10
-3
0.4046 9.423*10
-5
C
1
=
1
/R
1
R
1
R
2
C
2
=
2
/R
2
