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Table 2. ATTRIBUTES
Characteristics Value
ESD Protection Human Body Model > 2000 V
RPD − Pull−down Resistor
50 kW
Moisture Sensitivity (Note 1) Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Transistor Count 1344
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Min Max Unit
V
DD
Core Supply Voltage 4.6 V
V
DD_O
I/O Supply Voltage 4.6 V
V
IH
Input High Voltage (Note 2) 4.6 V
V
IL
Input Low Voltage −0.5 V
I
OUT
Maximum Output Current 24 mA
T
A
Operating Temperature Range −40 to +85 °C
T
stg
Storage Temperature Range −65 to +150 °C
q
JA
Thermal Resistance (Junction−to−Ambient) (Note 3) 0 lfpm
500 lfpm
42
35
°C/W
q
JC
Thermal Resistance (Junction−to−Case) (Note 3) 4 °C/W
T
sol
Wave Solder 265 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Maximum V
IH
is not to exceed maximum V
DD
.
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.
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Table 4. DC CHARACTERISTICS V
DD
= V
DD_O
= 3.3 V ±10% or 2.5 V ±5%, T
A
= −40°C to 85°C
Symbol
Characteristics Min Typ Max Unit
POWER SUPPLY CURRENT
V
DD
Core Power Supply Voltage V
DD
= 3.3 V ±10%
V
DD
= 2.5 V ±5%
2.970
2.375
3.3
2.5
3.630
2.625
V
V
DD_O
Output Power Supply Voltage V
DD_O
= 3.3 V ±10%
V
DD_O
= 2.5 V ±5%
2.970
2.375
3.3
2.5
3.630
2.625
V
I
DD
+ I
DD_O
Total Power Supply Current (all outputs active @ 350 MHz, R
REF
= 412 W,
R
L
= 43 W)
80 110 mA
I
stdby
Standby Current, all OE pins de−asserted with inputs @ 350 MHz 50 65 mA
l
incr
Incremental output current for additional output; One OE Enabled 15 23 mA
I
stdby
+ l
incr
Standby Current plus incremental current for one additional differential output;
One OE Enabled @ 350 MHz
65 88 mA
HCSL OUTPUTS (Notes 4, 5)
V
OH
Output HIGH Voltage 660 850 mV
V
OL
Output LOW Voltage −150 mV
V
OUT
Output Swing (Single−Ended)
Output Swing (Differential)
400
800
750
1500
mV
DIFFERENTIAL INPUT DRIVEN SINGLE−ENDED (Note 6) (Figures 4 and 6)
V
IH
CLK_IN/CLK_IN# Single-ended Input HIGH Voltage
0.5 V
DD
V
V
IL
CLK_IN/CLK_IN# Single-ended Input LOW Voltage
GND V
IH
− 0.3 V
V
th
Input Threshold Reference Voltage Range (Note 7) 0.25 V
DD
− 1.0 V
V
ISE
Single-ended Input Voltage (V
IH
− V
IL
)
0.5 VDD V
DIFFERENTIAL INPUTS DRIVEN DIFFERENTIALLY (Note 8) (Figures 5 and 7)
V
IHD
Differential Input HIGH Voltage 0.5 V
DD
− 0.85 V
V
ILD
Differential Input LOW Voltage 0 V
IHD
0.25
V
V
ID
Differential Input Voltage (V
IHD
− V
ILD
) 0.25 1.3 V
V
IHCMR
Input Common Mode Range (Differential Configuration) (Note 9) (Figure 8) 0.5 V
DD
− 0.85 V
I
IL
Input Leakage Current 0 < V
IN
< V
DD
(Note 10)
5
5
mA
LVTTL / LVCMOS INPUTS (OEx#)
V
IH
Input HIGH Voltage 2.0 V
DD
+ 0.3 V
V
IL
Input LOW Voltage −0.3 0.8 V
I
IL
Input LOW Current (V
IN
= GND) −10 +10
mA
I
IH
Input HIGH Current (V
IN
= V
DD
) 100
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Test configuration is R
S
= 33.2 W, R
L
= 49.9, C
L
= 2 pF, R
REF
= 475 W.
5. Measurement taken from Single−Ended waveform unless specified otherwise.
6. V
IH
, V
IL,
V
th
and V
ISE
parameters must be complied with simultaneously.
7. V
th
is applied to the complementary input when operating in single−ended mode.
8. V
IHD
, V
ILD,
V
ID
and V
CMR
parameters must be complied with simultaneously.
9. The common mode voltage is defined as V
IH
.
10.Does not include inputs with pulldown resistors.
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Table 5. AC TIMING CHARACTERISTICS V
DD
= V
DD_O
= 3.3 V ±10% or 2.5 V ±5%, T
A
= −40°C to 85°C (Note 15)
Symbol Characteristics Min Typ Max Unit
F
max
Maximum Input Frequency 350 MHz
T
rise
/T
fall
Rise Time / Fall Time (Notes 13, 17 and 33) (Figure 13) 175 500 700 ps
Output Slew Rate Output Slew Rate (Notes 13 and 17) 0.5 2.0 V/ns
DT
rise
/DT
fall
Rise/Fall Time Variation (Notes 17 and 26) 125 ps
Slew Rate Matching (Notes 18, 27 and 28) 20%
V
high
Voltage High (Notes 17, and 20) (Figure 14) 660 700 850 mV
V
low
Voltage Low (Notes 17, and 21) (Figure 14) −150 0 +150 mV
Input Slew Rate (Note 29 and 32) 0.35 V/ns
V
cross
absolute Absolute Crossing Point Voltages (Notes 12, 17 and 24)
Relative Crossing Point Voltages can be calculated (Notes 16, 17
and 24) (Figure 16)
250 550 mV
Total DV
cross
Total Variation of Vcross Over All Edges (Notes 17 and 25) 140 mV
Duty Cycle (Note 18) (Figure 15) 45 55 %
V
ovs
Maximum Voltage (Overshoot) (Notes 17 and 22) (Figure 14) V
high
+ 0.3 V
V
uds
Maximum Voltage (Undershoot) (Notes 17 and 23) (Figure 14) V
low
− 0.3 V
V
rb
Ringback Voltage (Note 17) (Figure 14) 0.2 N/A V
T
oe_lat
OE Latency (Note 11) 4 6 12 Cycles
t
pd
Input−to−Output Delay CLK_IN, DIF_[1:0] (Note 31) 0.6 1.0 1.4 ns
t
SKEW
Output−to−Output Skew across 2 outputs DIF_[1:0] (Notes 30 and 31) 0 5.0 20 ps
t
JITTER
f
Additive RMS Phase Jitter f
carrier
= 156.25 MHz, 12 kHz − 20 MHz Inte-
grated Range
46 80 fs
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
11. Time from deassertion until outputs are >200 mV.
12.Measured at crossing point where the instantaneous voltage value of the rising edge of CLK equals the falling edge of CLK#.
13.Measured from V
OL
= 0.175 V to V
OH
= 0.525 V. Only valid for Rising Clock and Falling Clock#.
14.This measurement refers to the total variation from the lowest crossing point to the highest, regardless of which edge is crossing
15.Test configuration is R
S
= 33.2 W, R
P
= 49.9, C
L
= 2 pF, R
REF
= 475 W.
16.Vcross(rel) Min and Max are derived using the following, Vcross(rel) Min = 0.250 + 0.5 (V
high avg
− 0.700). Vcross(rel) Max = 0.550 − 0.5
(0.700 – V
high avg
), (see Figure 16 for further clarification).
17.Measurement taken from Single Ended waveform.
18.Measurement taken from differential waveform.
19.Unless otherwise noted, all specifications in this table apply to all frequencies.
20.V
high
is defined as the statistical average High value as obtained by using the Oscilloscope V
high
Math function.
21.V
low
is defined as the statistical average Low value as obtained by using the Oscilloscope V
low
Math function.
22.Overshoot is defined as the absolute value of the maximum voltage.
23.Undershoot is defined as the absolute value of the minimum voltage.
24.The crossing point must meet the absolute and relative crossing point specifications simultaneously.
25.DVcross is defined as the total variation of all crossing voltages of Rising CLOCK and Falling CLOCK#. This is the maximum allowed vari-
ance in Vcross for any particular system.
26.Measured with oscilloscope, averaging off, using min max statistics. Variation is the delta between min and max.
27.Matching applies to rising edge rate for clock and falling edge rate for Clock#. It is measured using a ±75 mV window centered on the average
crosspoint where clock rising meets Clock# falling. The median crosspoint is used to calculate the voltage threshold the oscilloscope is to
use for the edge rate calculations.
28.Slew Rate matching is derived using the following, 2 * (T
rise
– T
fall
) / (T
rise
+ T
fall
).
29.Input slew rate is based on single ended measurement. This is the minimum input slew rate at which the NB3L202K devices are guaranteed
to meet all performance specifications.
30.Measured into fixed 2 pF load cap. Input to output skew is measured at the first output edge following the corresponding input.
31.Measured from differential cross−point to differential cross−point with scope averaging on to find mean value.
32.The differential input clock is expected to be sourced from a high performance clock oscillator.
33.Measured at 3.3 V ± 10% with typical HCSL input levels.

NB3L202KMNG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Clock Buffer 1:2 HCSL FANOUT BUFFER
Lifecycle:
New from this manufacturer.
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