VNQ5050K-E Electrical specifications
Doc ID 10864 Rev 7 13/31
Figure 6. Switching characteristics
Over temperature
L
H
L
L
H
L
Undervoltage
L
H
L
L
X
X
Output voltage > V
OL
L
H
H
H
L
(2)
H
Output current < I
OL
L
H
L
H
H
(3)
L
1. If the V
SD
is high, the STATUS pin is in a high impedance.
2. The STATUS pin is low with a delay equal to t
DSTKON
after INPUT falling edge.
3. The STATUS pin becomes high with a delay equal to t
POL
after INPUT falling edge.
Table 13. Electrical transient requirements (part 1/3)
ISO 7637-2:
2004(E)
test Pulse
Test levels
(1)
Number of
pulses or
test times
Burst cycle/pulse
repetition time
Delays and
impedance
III IV
1 -75 V -100 V
5000
pulses
0.5 s 5 s 2 ms, 10 Ω
2a +37 V +50 V
5000
pulses
0.2 s 5 s 50 μs, 2 Ω
3a -100 V -150 V 1h 90 ms 100 ms 0.1 μs, 50 Ω
3b +75 V +100 V 1h 90 ms 100 ms 0.1 μs, 50 Ω
Table 12. Truth table (continued)
Conditions Input Output Status (V
SD
=0V)
(1)
V
OUT
dV
OUT
/dt
(on)
t
r
80%
10%
t
f
dV
OUT
/dt
(off)
t
d(off)
t
d(on)
INPUT
t
t
90%
t
Won
t
Woff
Electrical specifications VNQ5050K-E
14/31 Doc ID 10864 Rev 7
4 -6 V -7 V 1 pulse
100 ms, 0.01
Ω
5b
(2)
+65 V +87 V 1 pulse 400 ms, 2
Ω
Table 14. Electrical transient requirements (part 2/3)
ISO 7637-2:
2004(E)
test pulse
Test level results
(1)
III IV
1C C
2a C C
3a C C
3b C C
4C C
5b
(2)
CC
1. The above test levels must be considered referred to V
CC
= 13.5V except for pulse 5b
2. Valid in case of external load dump clamp: 40V maximum referred to ground.
Table 15. Electrical transient requirements (part 3/3)
Class Contents
C All functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure
to disturbance and cannot be returned to proper operation without replacing the
device.
Table 13. Electrical transient requirements (part 1/3) (continued)
ISO 7637-2:
2004(E)
test Pulse
Test levels
(1)
Number of
pulses or
test times
Burst cycle/pulse
repetition time
Delays and
impedance
III IV
VNQ5050K-E Electrical specifications
Doc ID 10864 Rev 7 15/31
2.4 Electrical characteristics curves
Figure 7. Off-state output current Figure 8. High level input current
Figure 9. Input clamp voltage Figure 10. Input low level
Figure 11. Input high level Figure 12. Input hysteresis voltage
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
0
0.1
0.2
0.3
0.4
0.5
Iloff1 (uA)
Off state
Vcc=13V
Vin=Vout=0V
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Iih (uA)
Vin=2.1V
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
6
6.25
6.5
6.75
7
7.25
7.5
7.75
8
Vicl (V)
Iin=1mA
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
0
0.5
1
1.5
2
2.5
3
3.5
4
Vil (V)
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
0
0.5
1
1.5
2
2.5
3
3.5
4
Vih (V)

VNQ5050K-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Quad Ch HiSide Drivr
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet