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VNQ5050K-E

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VNQ5050K-E Electrical specifications
Doc ID 10864 Rev 7 7/31
2 Electrical specifications
Figure 3. Current and voltage conventions
Note: V
Fn
= V
OUTn
- V
CC
during reverse battery condition
2.1 Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in this section for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality documents.
I
GND
V
CC
GND
OUTPUTnSTAT_DIS
I
SD
INPUTn
I
INn
V
SD
V
INn
I
OUTn
V
OUTn
STATUSn
I
STATn
V
STATn
V
CC
I
S
Table 4. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
DC supply voltage 41 V
- V
CC
Reverse DC supply voltage 0.3 V
- I
GND
DC reverse ground pin current 200 mA
I
OUT
DC output current Internally limited A
- I
OUT
Reverse DC output current 15 A
I
IN
DC input current +10/-1 mA
I
STAT
DC status current +10/-1 mA
I
STAT_DIS
DC status disable current +10 / -1 mA
E
MAX
Maximum switching energy (single pulse)
(L=3 mH; R
L
=0Ω; V
bat
=13.5V; T
jstart
=150ºC;
I
OUT
= I
limL
(typ.))
104 mJ
Electrical specifications VNQ5050K-E
8/31 Doc ID 10864 Rev 7
2.2 Thermal data
V
ESD
Electrostatic discharge
(human body model: R=1.5KΩ; C=100pF)
– Input
–Status
–STAT_DIS
– Output
–V
CC
4000
4000
4000
5000
5000
V
V
V
V
V
V
ESD
Charge device model (CDM-AEC-Q100-011) 750 V
T
j
Junction operating temperature -40 to 150 °C
T
stg
Storage temperature - 55 to 150 °C
Table 4. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Table 5. Thermal data
Symbol Parameter Max value Unit
R
thj-case
Thermal resistance junction-case (With one channel ON) 2.8 °C/W
R
thj-amb
Thermal resistance junction-ambient See Figure 32. °C/W
VNQ5050K-E Electrical specifications
Doc ID 10864 Rev 7 9/31
2.3 Electrical characteristics
Values specified in this section are for 8 V<V
CC
<36 V, -40 °C< T
j
<150 °C, unless otherwise
stated.
Table 6. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply voltage 4.5 13 36 V
V
USD
Undervoltage shutdown 3.5 4.5 V
V
USDhyst
Undervoltage shutdown
hysteresis
0.5 V
R
ON
On-state resistance
(1)
1. For each channel.
I
OUT
=2A; T
j
=25°C
I
OUT
=2A; T
j
=150°C
I
OUT
=2A; V
CC
=5V; T
j
=25°C
50
100
65
mΩ
mΩ
mΩ
V
clamp
Clamp Voltage I
S
=20 mA 41 46 52 V
I
S
Supply current
Off-state; V
CC
=13V;
V
IN
=V
OUT
=0V; T
j
=25°C
On-state; V
IN
=5V; V
CC
=13V;
I
OUT
=0A
2
(2)
8
2. PowerMOS leakage included
5
(2)
14
μA
mA
I
L(off1)
Off-state output current
(1)
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=25°C
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
=125°C
0
0
0.01 3
5
μA
μA
I
L(off2)
Off-state output current
(1)
V
IN
=0V; V
OUT
= 4V -75 0 μA
V
F
Output - V
CC
diode
voltage
(1)
-I
OUT
=2A; T
j
=150°C 0.7 V
Table 7. Switching (V
CC
=13V; T
j
=25°C)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
R
L
=6.5Ω
(see Figure 6)
-15-μs
t
d(off)
Turn-off delay time
R
L
=6.5Ω
(see Figure 6)
-40-μs
dV
OUT
/dt
(on)
Turn-on voltage slope
R
L
=6.5Ω
(See Figure 16)
--V/μs
dV
OUT
/dt
(off)
Turn-off voltage slope
R
L
=6.5Ω
(See Figure 18)
--V/μs
W
ON
Switching energy
losses during t
won
R
L
=6.5Ω
(see Figure 6)
-0.19-mJ
W
OFF
Switching energy
losses during t
woff
R
L
=6.5Ω
(see Figure 6)
-0.27-mJ
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VNQ5050K-E

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Manufacturer:
STMicroelectronics
Description:
Gate Drivers Quad Ch HiSide Drivr
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