LTC6802-2
25
68022fa
applicaTions inForMaTion
FAULT PROTECTION
Overview
Care should always be taken when using high energy
sources such as batteries. There are numerous ways
that systems can be (mis-)configured that might affect a
battery system during its useful lifespan. Table 16 shows
the various situations that should be considered when plan-
ning protection circuitry. The first five scenarios are to be
anticipated during production and appropriate protection
is included within the LTC6802-2 device itself.
Table 16. LTC6802-2 Failure Mechanism Effect Analysis
SCENARIO EFFECT DESIGN MITIGATION
Cell input open circuit (random) Power-up sequence at IC inputs Clamp diodes at each pin to V
+
and V
–
(within IC) provide
alternate power path.
Cell input open circuit (random) Differential input voltage overstress Zener diodes across each cell voltage input pair (within IC)
limits stress.
Top cell input connection loss (V
+
) Power will come from highest connected cell input
or via data port fault current
Clamp diodes at each pin to V
+
and V
–
(within IC) provide
alternate power path.
Bottom cell input connection loss
(V
–
)
Power will come from lowest connected cell input
or via data port fault current
Clamp diodes at each pin to V
+
and V
–
(within IC) provide
alternate power path.
Disconnection of a harness between
a group of battery cells and the IC
(in a system of stacked groups)
Loss of supply connection to the IC Clamp diodes at each pin to V
+
and V
–
(within IC) provide
an alternate power path if there are other devices (which can
supply power) connected to the LTC6802-2.
Data link disconnection between
LTC6802-2 and the master.
Loss of serial communication (no stress to ICs). The device will enter standby mode within 2 seconds of
disconnect. Discharge switches are disabled in standby mode.
Cell-pack integrity, break between
stacked units
No effect during charge or discharge Use digital isolators to isolate the LTC6802-2 serial port from
other LTC6802-2 serial ports.
Cell-pack integrity, break within
stacked unit
Cell input reverse overstress during discharge Add parallel Schottky diodes across each cell for load-path
redundancy. Diode and connections must handle full operating
current of stack, will limit stress on IC
Cell-pack integrity, break within
stacked unit
Cell input positive overstress during charge Add SCR across each cell for charge-path redundancy. SCR
and connections must handle full charging current of stack, will
limit stress on IC by selection of trigger Zener
Poll Interrupt Status (Level Polling)
1. Pull CSBI low
2. Send Address byte for bottom device
3. Send PLINT command byte
4. SDO output from bottom device pulled low if any device has an interrupt condition; otherwise, SDO high
5. Pull CSBI high to exit polling
6. Repeat steps 1-5 for middle device and top device