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Integrated Silicon Solution, Inc. — www.issi.com 4
Rev. B
07/29/2015
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The access of IS39LV040/010/512 are similar to
EPROM. To read data, three control functions must
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IL
).
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( V
IL
).
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V
IH
).
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the manufacturer and the device through hardware or
software read ID operation. See Table 1 for pFLASH™
Manufacturer ID and Device ID. The hardware ID mode
is activated by applying a 12.0 Volt on A9 pin, typically
used by an external programmer for selecting the right
programming algorithm for the devices. Refer to Table
2 for Bus Operation Modes. The software ID mode is
activated by a three-bus-cycle command. See Table 3
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The programming is a four-bus-cycle operation and
the data is programmed into the devices (to a logical
“0”) on a byte-by-byte basis. See Table 3 for Software
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by writing the three-byte command sequence followed
by program address and one byte of program data
into the devices. The addresses are latched on the
falling edge of WE# or CE# whichever occurs later,
and the data are latched on the rising edge of WE# or
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automatically handles the internal programming volt-
ages and timing.
A data “0” can not be programmed back to a “1”. Only
erase operation can convert the “0”s to “1”s. The Data#
Polling on I/O7 or Toggle Bit on I/O6 can be used to
detect the progress or completion of a program cycle.
COMMAND
ADDRESS
LATCH
ERASE/PROGRAM
VOLTAGE
GENERATOR
HIGH
VOLTAGE
SWITCH
I/O0-I/O7
I/O
BUFFERS
WE#
CE#
OE#
REGISTER
CE,OE
LOGIC
Y-DECODER
DATA
SENSE
LATCH
AMP
Y-GATING
MEMORY
A0-A
MS
X-DECODER
ARRAY
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Integrated Silicon Solution, Inc. — www.issi.com 5
Rev. B
07/29/2015
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The entire memory array can be erased through a chip
erase operation. Pre-programs the devices are not
required prior to a chip erase operation. Chip erase
starts immediately after a six-bus-cycle chip erase
command sequence. All commands will be ignored
once the chip erase operation has started. The devices
will return to standby mode after the completion of chip
erase.
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The memory array of IS39LV040/010/512 are organized
into uniform 4 Kbyte sectors. A sector erase operation
allows to erase any individual sector without affecting
the data in others. The memory array of IS39LV010/040,
excluding IS39LV512, are also organized into uniform
64 Kbyte blocks (sector group - consists of sixteen
adjacent sectors). A block erase operation allows to
erase any individual block. The sector or block erase
operation is similar to chip erase.
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The IS39LV040/010/512 provide a Data# Polling fea-
ture to indicate the progress or completion of a program
and erase cycles. During a program cycle, an attempt
to read the devices will result in the complement of the
last loaded data on I/O7. Once the program operation
is completed, the true data of the last loaded data is
valid on all outputs. During a sector, block, or chip erase
cycle, an attempt to read the device will result a “0” on
I/O7. After the erase operation is completed, an attempt
to read the device will result a “1” on I/O7.
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The IS39LV040/010/512 also provide a Toggle Bit fea-
ture to detect the progress or completion of a program
and erase cycles. During a program or erase cycle, an
attempt to read data from the device will result a tog-
gling between “1” and “0” on I/O6. When the program
or erase operation is complete, I/O6 will stop toggling
and valid data will be read. Toggle bit may be accessed
at any time during a program or erase cycle.
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Hardware data protection protects the devices from un-
intentional erase or program operation. It is performed
in the following ways: (a) V
CC
sense: if V
CC
is below 1.8
V (typical), the write operation is inhibited. (b) Write
inhibit: holding any of the signal OE# low, CE# high, or
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of less than 5 ns (typical) on the WE# or CE# input will
not initiate a write operation.
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Manufacturer ID 9Dh
Device ID:
IS39LV040 3Eh
IS39LV010 1Ch
IS39LV512 1Bh
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Integrated Silicon Solution, Inc. — www.issi.com 6
Rev. B
07/29/2015
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512Kbit
1 Mbit
4 Mbit
Block
0
(2)
64
Sec-
tor 0
4 00000h - 00FFFh
Sec-
tor 1
4 01000h - 01FFFh
:: :
Sector
15
4 0F000h - 0FFFFh
Block 1 64
Sector
16
4 10000h - 10FFFh
Sector
17
4 11000h - 11FFFh
:: :
Sector
31
4 1F000h - 1FFFFh
Block 2 64
““
20000h - 2FFFFh
Block 3 64
““
30000h - 3FFFFh
Block 4 64
““
40000h - 4FFFFh
Block 5 64
““
50000h - 5FFFFh
Block 6 64
““
60000h - 6FFFFh
Block 7 64
““
70000h - 7FFFFh
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Notes:
1. A Block is a 64 Kbyte sector group which consists of sixteen adjecent sectors of 4 Kbyte each.
2. Block erase feature is available for IS39LV040/010 only. The chip erase command should be used to erase
the Block 0 for the IS39LV512.

IS39LV512-70VCE

Mfr. #:
Manufacturer:
ISSI
Description:
NOR Flash 512K 2.7-3.6V 70ns ISA Parallel Flash
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union