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MMBD352LT1G

P1-P3P4-P6P7-P9P10-P12P13-P13
SKP02N120
IFAG IPC TD VLS
1 Rev. 2.3 12.06.2013
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
Allowed number of short circuits: <1000; time between
short circuits: >1s.
40lower E
off
compared to previous generation
Short circuit withstand time – 10 s
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type V
CE
I
C
E
off
T
j
Marking Package
SKP02N120 1200V 2A 0.11mJ
150C
K02N120 PG-TO-220-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CE
1200 V
DC collector current
T
C
= 25C
T
C
= 100C
I
C
6.2
2.8
A
Pulsed collector current, t
p
limited by T
jmax
I
Cpul s
9.6
Turn off safe operating area
V
CE
1200V, T
j
150C
-
9.6
Diode forward current
T
C
= 25C
T
C
= 100C
I
F
4.5
2
Diode pulsed current, t
p
limited by T
jmax
I
Fp ul s
9
Gate-emitter voltage
V
GE
20
V
Short circuit withstand time
2
V
GE
= 15V, 100VV
CC
1200V, T
j
150C
t
SC
10
s
Power dissipation
T
C
= 25C
P
tot
62 W
Operating junction and storage temperature
T
j
, T
st g
-55...+150
C
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
T
s
260
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
PG-TO-220-3-1
(TO-220AB)
G
C
E
SKP02N120
IFAG IPC TD VLS
2 Rev. 2.3 12.06.2013
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
R
thJ C
2.0 K/W
Diode thermal resistance,
junction – case
R
thJ C D
4.5
Thermal resistance,
junction – ambient
R
thJ A
62
Electrical Characteristic, at T
j
= 25 C, unless otherwise specified
Parameter Symbol Conditions
Value
Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage
V
(BR ) C ES
V
GE
=0V, I
C
=100A
1200 - - V
Collector-emitter saturation voltage
V
CE( s at)
V
GE
= 15V, I
C
=2A
T
j
=25C
T
j
=150C
2.5
-
3.1
3.7
3.6
4.3
Diode forward voltage
V
F
V
GE
=0V, I
F
=2A
T
j
=25C
T
j
=150C
-
2.0
1.75
2.5
Gate-emitter threshold voltage
V
GE( t h)
I
C
=100A,V
CE
=V
GE
3 4 5
Zero gate voltage collector current
I
CE S
V
CE
=1200V,V
GE
=0V
T
j
=25C
T
j
=150C
-
-
-
-
25
100
A
Gate-emitter leakage current
I
GE S
V
CE
=0V,V
GE
=20V
- - 100 nA
Transconductance
g
fs
V
CE
=20V, I
C
=2A
1.5 - S
Dynamic Characteristic
Input capacitance
C
iss
V
CE
=25V,
V
GE
=0V,
f=1MHz
- 205 250 pF
Output capacitance
C
os s
- 28 34
Reverse transfer capacitance
C
rs s
- 12 15
Gate charge
Q
Ga t e
V
CC
=960V, I
C
=2A
V
GE
=15V
- 11 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
- 7 - nH
Short circuit collector current
2)
I
C( S C )
V
GE
=15V,t
SC
10s
100V V
CC
1200V,
T
j
150C
- 24 - A
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
SKP02N120
IFAG IPC TD VLS
3 Rev. 2.3 12.06.2013
Switching Characteristic, Inductive Load, at T
j
=25 C
Parameter Symbol Conditions
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
t
d( o n )
T
j
=25C,
V
CC
=800V,I
C
=2A,
V
GE
=15V/0V,
R
G
=91 ,
L
1)
=180nH,
C
1)
=40pF
Energy losses include
“tail” and diode
reverse recovery.
- 23 30 ns
Rise time
t
r
- 16 21
Turn-off delay time
t
d( o f f)
- 260 340
Fall time
t
f
- 61 80
Turn-on energy
E
on
- 0.16 0.21 mJ
Turn-off energy
E
off
- 0.06 0.08
Total switching energy
E
ts
- 0.22 0.29
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
T
j
=25C,
V
R
=800V, I
F
=2A,
di
F
/dt=250A/s
-
-
-
50 ns
Diode reverse recovery charge
Q
rr
- 0.10
C
Diode peak reverse recovery current
I
rr m
- 4.2 A
Diode peak rate of fall of reverse
recovery current during t
F
di
rr
/dt
- 400
A/s
Switching Characteristic, Inductive Load, at T
j
=150 C
Parameter Symbol Conditions
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
t
d( o n )
T
j
=150C
V
CC
=800V,
I
C
=2A,
V
GE
=15V/0V,
R
G
=91 ,
L
1)
=180nH,
C
1)
=40pF
Energy losses include
“tail” and diode
reverse recovery.
- 26 31 ns
Rise time
t
r
- 14 17
Turn-off delay time
t
d( o f f)
- 290 350
Fall time
t
f
- 85 102
Turn-on energy
E
on
- 0.27 0.33 mJ
Turn-off energy
E
off
- 0.11 0.15
Total switching energy
E
ts
- 0.38 0.48
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
T
j
=150C
V
R
=800V, I
F
=2A,
di
F
/dt=300A/s
-
-
-
90 ns
Diode reverse recovery charge
Q
rr
- 0.30
C
Diode peak reverse recovery current
I
rr m
- 6.7 A
Diode peak rate of fall of reverse
recovery current during t
F
di
rr
/dt
- 110
A/s
1)
Leakage inductance L
and stray capacity C
due to dynamic test circuit in figure E.
P1-P3P4-P6P7-P9P10-P12P13-P13

MMBD352LT1G

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Manufacturer:
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Rectifiers 7V 225mW Dual
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