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MMBD352LT1G

P1-P3P4-P6P7-P9P10-P12P13-P13
SKP02N120
IFAG IPC TD VLS
7 Rev. 2.3 12.06.2013
E, SWITCHING ENERGY LOSSES
0A
2A
4A
6A
8A
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
E
on
*
E
off
E
ts
*
E, SWITCHING ENERGY LOSSES
0 50 100 150
0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
0.5mJ
E
ts
*
E
on
*
E
off
I
C
, COLLECTOR CURRENT R
G
, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
j
= 150C,
V
CE
= 800V, V
GE
= +15V/0V, R
G
= 91,
dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
j
= 150C,
V
CE
= 800V, V
GE
= +15V/0V, I
C
= 2A,
dynamic test circuit in Fig.E )
E, SWITCHING ENERGY LOSSES
-50°C 0°C 50°C 100°C 150°C
0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
E
ts
*
E
on
*
E
off
Z
thJC
, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms
1s
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
T
j
, JUNCTION TEMPERATURE
t
p
, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
CE
= 800V,
V
GE
= +15V/0V, I
C
= 2A, R
G
= 91,
dynamic test circuit in Fig.E )
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
p
/ T)
*) E
on
and E
ts
include losses
due to diode recovery.
*) E
on
and E
ts
include losses
due to diode recovery.
*) E
on
and E
ts
include losses
due to diode recovery.
C
1
=
1
/R
1
R
1
R
2
C
2
=
2
/R
2
R , ( K / W )
, ( s )
0.66735 0.04691
0.70472 0.00388
0.62778 0.00041
SKP02N120
IFAG IPC TD VLS
8 Rev. 2.3 12.06.2013
V
GE
, GATE-EMITTER VOLTAGE
0nC 5nC 10nC
15nC
0V
5V
10V
15V
20V
U
CE
=960V
C, CAPACITANCE
0V 10V 20V 30V
10pF
100pF
C
rss
C
oss
C
iss
Q
GE
, GATE CHARGE V
CE
, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(I
C
= 2A)
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
GE
= 0V, f = 1MHz)
t
sc
, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V 15V
0s
5s
10s
15s
20s
25s
30
s
I
C(sc)
, SHORT CIRCUIT COLLECTOR CURRENT
10V 12V 14V 16V 18V 20V
0A
10A
20A
30A
40A
V
GE
, GATE-EMITTER VOLTAGE V
GE
, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
CE
= 1200V, start at T
j
= 25C)
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100VV
CE
1200V, T
C
= 25C, T
j
150C)
SKP02N120
IFAG IPC TD VLS
9 Rev. 2.3 12.06.2013
t
rr
, REVERSE RECOVERY TIME
100A/s 200A/s 300A/s 400A/s
0ns
50ns
100ns
150ns
200ns
250ns
I
F
=1A
I
F
=2A
Q
rr
, REVERSE RECOVERY CHARGE
100A/s 200A/s 300A/s 400A/s
0.0µC
0.1µC
0.2µC
0.3µC
0.4µC
I
F
=2A
I
F
=1A
di
F
/dt, DIODE CURRENT SLOPE di
F
/dt, DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(V
R
= 800V, T
j
= 150C,
dynamic test circuit in Fig.E )
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(V
R
= 800V, T
j
= 150C,
dynamic test circuit in Fig.E )
I
rr
, REVERSE RECOVERY CURRENT
100A/s 200A/s 300A/s 400A/s
0A
2A
4A
6A
8A
10A
I
F
=2A
I
F
=1A
di
rr
/dt
,
DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY
CURRENT
100A/s 200A/s 300A/s 400A/s
0A/s
100A/s
200A/s
300A/s
400A/
s
I
F
=1A
I
F
=2A
di
F
/dt, DIODE CURRENT SLOPE di
F
/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(V
R
= 800V, T
j
= 150C,
dynamic test circuit in Fig.E )
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(V
R
= 800V, T
j
= 150C,
dynamic test circuit in Fig.E )
P1-P3P4-P6P7-P9P10-P12P13-P13

MMBD352LT1G

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Manufacturer:
ON Semiconductor
Description:
Rectifiers 7V 225mW Dual
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