MMBD352LT1G

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

SKP02N120

IFAG IPC TD VLS

4 Rev. 2.3 12.06.2013

I

C

, COLLECTOR CURRENT

10Hz

100Hz

1kHz

10kHz

100kHz

0A

2A

4A

6A

8A

10A

12A

T

C

=110°C

T

C

=80°C

I

C

, COLLECTOR CURRENT

1V

10V

100V

1000V

0.01A

0.1A

1A

10A

DC

20ms

150s

50s

500s

t

p

=10s

f, SWITCHING FREQUENCY V

CE

, COLLECTOR-EMITTER VOLTAGE

Figur

e 1. Collector current as a function of

switching frequency

(T

j

 150C, D = 0.5, V

CE

= 800V,

V

GE

= +15V/0V, R

G

= 91)

Figure 2. Safe operating area

(D = 0, T

C

= 25C, T

j

 150C)

P

tot

, POWER DISSIPATION

25°C

50°C

75°C

100°C

125°C

0W

10W

20W

30W

40W

50W

60W

I

C

, COLLECTOR CURRENT

25°C

50°C

75°C

100°C

125°C

0A

1A

2A

3A

4A

5A

6A

7A

T

C

, CASE TEMPERATURE T

C

, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

(T

j

 150C)

Figure 4. Collector current as a function of

case temperature

(V

GE

 15V, T

j

 150C)

I

c

I

c

SKP02N120

IFAG IPC TD VLS

5 Rev. 2.3 12.06.2013

I

C

, COLLECTOR CURRENT

0V 1V 2V 3V 4V 5V 6V 7V

0A

1A

2A

3A

4A

5A

6A

7A

15V

13V

11V

9V

7V

V

GE

=17V

I

C

, COLLECTOR CURRENT

0V 1V 2V 3V 4V 5V 6V 7V

0A

1A

2A

3A

4A

5A

6A

7A

15V

13V

11V

9V

7V

V

GE

=17V

V

CE

, COLLECTOR-EMITTER VOLTAGE V

CE

, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics

(T

j

= 25C)

Figure 6. Typical

output characteristics

(T

j

= 150C)

I

C

, COLLECTOR CURRENT

3V 5V 7V 9V

11V

0A

1A

2A

3A

4A

5A

6A

7A

T

j

=-40°C

T

j

=+150°C

T

j

=+25°C

V

CE(sat)

, COLLECTOR-EMITTER SATURATION VOLTAGE

-50°C 0°C 50°C 100°C 150°C

0V

1V

2V

3V

4V

5V

6V

I

C

=4A

I

C

=2A

I

C

=1A

V

GE

, GATE-EMITTER VOLTAGE T

j

, JUNCTION TEMPERATURE

Figure 7. Typical transfer c

haracteristics

(V

CE

= 20V)

Figure 8. Typical collector

-

emitter

saturation voltage as a function of junction

temperature

(V

GE

= 15V)

SKP02N120

IFAG IPC TD VLS

6 Rev. 2.3 12.06.2013

t, SWITCHING TIMES

0A

2A

4A

6A

8A

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

t, SWITCHING TIMES

0 50 100 150

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

I

C

, COLLECTOR CURRENT R

G

, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T

j

= 150C,

V

CE

= 800V, V

GE

= +15V/0V, R

G

= 91,

dynamic test circuit in Fig.E )

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T

j

= 150C,

V

CE

= 800V, V

GE

= +15V/0V, I

C

= 2A,

dynamic test circuit in Fig.E)

t, SWITCHING TIMES

-50°C 0°C 50°C 100°C 150°C

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

V

GE(th)

, GATE-EMITTER THRESHOLD VOLTAGE

-50°C

0°C

50°C

100°C

150°C

0V

1V

2V

3V

4V

5V

6V

typ.

min.

max.

T

j

, JUNCTION TEMPERATURE T

j

, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V

CE

= 800V,

V

GE

= +15V/0V, I

C

= 2A, R

G

= 91,

dynamic test circuit in Fig.E )

Figure 12. Gate

-

emitter threshold voltage

as a function of junction temperature

(I

C

= 0.3mA)

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

MMBD352LT1G

Mfr. #:

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Rectifiers 7V 225mW Dual

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