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MMBD352LT1G

P1-P3P4-P6P7-P9P10-P12P13-P13
SKP02N120
IFAG IPC TD VLS
10 Rev. 2.3 12.06.2013
I
F
, FORWARD CURRENT
0V 1V 2V 3V 4V
0A
1A
2A
3A
4A
5A
6A
7A
T
J
=25°C
T
J
=150°C
V
F
, FORWARD VOLTAGE
0°C 40°C 80°C 120°C
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
3.0V
I
F
=4A
I
F
=2A
I
F
=1A
V
F
, FORWARD VOLTAGE T
j
, JUNCTION TEMPERATURE
Figure 25. Typical diode f
orward current as
a function of forward voltage
Figure 26. Typical diode forward voltage as
a function of junction temperature
Z
thJCD
, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms
1s
10
-2
K/W
10
-1
K/W
10
0
K/W
0
.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
t
p
, PULSE WIDTH
Figure 27. Diode transien
t thermal
impedance as a function of pulse width
(D = t
p
/ T)
C
1
=
1
/R
1
R
1
R
2
C
2
=
2
/R
2
R , ( K / W )
, ( s )
0.10109 0.38953
0.99478 0.04664
1.07923 0.00473
1.94890 0.00066
0.3751
SKP02N120
IFAG IPC TD VLS
11 Rev. 2.3 12.06.2013
SKP02N120
IFAG IPC TD VLS
12 Rev. 2.3 12.06.2013
I
r
r
m
90%
I
r r m
10%
I
r r m
di /dt
F
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
r r
Q =Q Q
r r S F
+
t =t t
r r S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1
2
n
T
(
t
)
j
1
1
2
2
n
n
T
C
r r
r
r
rr
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switch
ing losses
Figure E. Dynamic test circuit
Leakage inductance L
=180nH,
and stray capacity C
=40pF.
P1-P3P4-P6P7-P9P10-P12P13-P13

MMBD352LT1G

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Buy MMBD352LT1G
Manufacturer:
ON Semiconductor
Description:
Rectifiers 7V 225mW Dual
Lifecycle:
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