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ADMV1009AEZ

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
12.7 GHz to 15.4 GHz, GaAs, MMIC,
Upper Sideband, Differential Upconverter
Data Sheet
ADMV1009
Rev. B Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2017-2018 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
RF output frequency range: 12.7 GHz to 15.4 GHz
IF input frequency range: 2.8 GHz to 4 GHz
LO input frequency range: 9 GHz to 12.6 GHz
Matched 50 Ω RF output, LO input, and IF input
20 dB of image rejection
32-terminal, 4.9 mm × 4.9 mm LCC package
APPLICATIONS
Point to point microwave radios
Radars and electronic warfare systems
Instrumentation, automatic test equipment
FUNCTIONAL BLOCK DIAGRAM
14
11
3
2
10
15
18
19 26 27
29 317
ADMV1009
VGMIX
IF1
RFOUT
GND
GND
GND
GND
IF2
VGRF VDRF
LOIN VGLO VDLO
15770-001
Figure 1.
GENERAL DESCRIPTION
The ADMV1009 is a compact, gallium arsenide (GaAs) design,
monolithic microwave integrated circuit (MMIC), upper sideband
(USB), differential, upconverter in a RoHS compliant package
optimized for point to point microwave radio designs that
operate in the 12.7 GHz to 15.4 GHz frequency range.
The ADMV1009 provides 21 dB of conversion gain with 20 dB
of sideband rejection. The ADMV1009 uses a radio frequency (RF)
amplifier preceded by a passive, double balanced mixer, where a
driver amplifier drives the local oscillator (LO). IF1 and IF2 mixer
inputs are provided, and an external 180° balun is needed to
drive the IF pins differentially. The ADMV1009 is a much
smaller alternative to hybrid style single sideband (SSB)
upconverter assemblies and eliminates the need for wire
bonding by allowing the use of surface-mount manufacturing
assemblies.
The ADMV1009 upconverter comes in a compact, thermally
enhanced, 4.9 mm × 4.9 mm LCC package. The ADMV1009
operates over the −40°C to +85°C temperature range.
ADMV1009 Data Sheet
Rev. B | Page 2 of 23
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Typical Performance Characteristics ............................................. 6
IF Frequency = 2.8 GHz .............................................................. 6
IF Frequency = 3.4 GHz .............................................................. 8
IF Frequency = 4 GHz ............................................................... 10
IF Bandwidth .............................................................................. 12
Leakage Performance ................................................................. 13
Return Loss Performance .......................................................... 14
Spurious Performance ............................................................... 15
M × N Spurious Performance ................................................... 17
Theory of Operation ...................................................................... 18
LO Driver Amplifier .................................................................. 18
Mixer ............................................................................................ 18
RF Amplifier ............................................................................... 18
Applications Information .............................................................. 19
Typical Application Circuit ....................................................... 19
Evaluation Board Information ................................................. 20
Bill of Materials ........................................................................... 22
Outline Dimensions ....................................................................... 23
Ordering Guide .......................................................................... 23
REVISION HISTORY
4/2018—Rev. A to Rev. B
Changes to Thermal Resistance Section and Table 3 ................... 4
1/2018—Rev. 0 to Rev. A
Change to Product Title ................................................................... 1
Changes to General Description and Figure 1 ............................. 1
Changes to Table 1 ............................................................................ 3
Changes to Table 2 ............................................................................ 4
Added Thermal Resistance Section and Table 3; Renumbered
Sequentially ....................................................................................... 4
Changes to Figure 2 and Table 4 ..................................................... 5
Changes to Figure 4, Figure 7, Figure 4 Caption, and Figure 7
Caption ............................................................................................... 6
Changes to Figure 14, Figure 17, Figure 14 Caption, and Figure 17
Caption ............................................................................................... 8
Changes to Figure 24, Figure 27, Figure 24 Caption, and Figure 27
Caption ............................................................................................ 10
Changes to Figure 35 and Figure 36............................................. 12
Changes to Figure 37 through Figure 40 ..................................... 13
Changes to Figure 47 through Figure 52 ..................................... 15
Changes to Figure 53 through Figure 58 ..................................... 16
Changes to Table 5 and M × N Spurious Performance Section .... 17
Change to Theory of Operation Section ..................................... 18
Changes to Figure 59 ...................................................................... 19
Changes to Power On Sequence Section and Power Off
Sequence Section ............................................................................ 20
Change to Table 6 ........................................................................... 22
Changes to Ordering Guide .......................................................... 23
10/2017—Revision 0: Initial Version
Data Sheet ADMV1009
Rev. B | Page 3 of 23
SPECIFICATIONS
VDRF = 5 V, V D L O = 5 V, I D L O = 60 mA, IDRF = 250 mA, LO = −4 dBm ≤ LO ≤ +4 dBm, −40°C ≤ T
A
≤ +85°C; data taken with
Mini-Circuits NCS1-422+, RF transformer as upper sideband, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
RF OUTPUT FREQUENCY RANGE
15.4
GHz
INPUT FREQUENCY RANGE
Local Oscillator LO
9 12.6 GHz
Intermediate Frequency IF
2.8 4 GHz
LO AMPLITUDE
−4 0 +4 dBm
IF INPUT POWER
−25 0 dBm
PERFORMANCE
With balun
Conversion Gain 15 21 25 dB
Noise Figure NF 14 16.5 dB
Output Third-Order Intercept IP3 At output power (P
OUT
) = 8 dBm 31 35 dBm
Output 1 dB Compression Point P1dB 23 25 dBm
Sideband Rejection
60
dBc
Leakage
LO to RF −30 −10 dBm
LO to IF −25 −20 dBm
RF Output IF = 0 dBm
2× LO − 2× IF Spur 45 52 dBc
4× IF Spur
75
dBc
Return Loss
RF Output 12 10 dB
LO Input −4 dBm ≤ LO ≤ +4 dBm 12 10 dB
IF Input 11 10 dB
POWER INTERFACE
Amplifier Voltage
RF VDRF 5 V
LO
VDLO
5
V
Gate Voltage
RF VGRF −1.5 −0.5 V
LO VGLO −1.5 −0.5 V
Mixer Voltage VGMIX −1.1 V
Amplifier Current
RF IDRF Adjust VGRF between −1.5 V and −0.5 V to achieve IDRF 250 300 mA
LO IDLO Adjust VGLO between −1.5 V and −0.5 V to achieve IDLO 60 mA
Gate Current
RF IGRF < 3 mA
LO IGLO < 1 mA
Total Power 1.55 W
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

ADMV1009AEZ

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Up-Down Converters 13/15GHz GaAs UpConverter
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