ISL89163, ISL89164, ISL89165
10
FN7707.5
October 13, 2016
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Functional Description
Overview
The ISL89163, ISL89164, ISL89165 MOSFET drivers incorporate
several features optimized for Synchronous Rectifier (SR) driver
applications including precision input logic thresholds, enable
inputs, undervoltage lockout, and high amplitude output drive
currents.
The precision input thresholds facilitate the use of an external RC
network to delay the rising or falling propagation of the driver
output. This is a useful feature for adjusting when the SRs turn on
relative to the primary side FETs. In a similar manner, these
drivers can also be used to control the turn-on/off timing of the
primary side FETs.
The Enable inputs (ENA, ENB) are used to emulate diode
operation of the SRs by disabling the driver output when it is
necessary to prevent negative currents in the output filter
inductors. An example is turning off the SRs when the power
supply output is turned off. This prevents the output capacitor
from being discharged through the output inductor. If this is
allowed to happen, the voltage across the output capacitor will
ring negative possibly damaging the capacitor (if it is polarized)
and probably damaging the load. Another example is preventing
circulating currents between paralleled power supplies during no
or light load conditions. During light load conditions (especially
when active load sharing is not active), energy will be transferred
from the paralleled power supply that has a higher voltage to the
paralleled power supply with the lower voltage. Consequently, the
energy that is absorbed by the low voltage output is then
transferred to the primary side causing the bus voltage to
increase until the primary side is damaged by excessive voltage.
The start-up sequence for input threshold Options A, B, and C is
designed to prevent unexpected glitches when V
DD
is being
turned on or turned off. When V
DD
< ~1V, an internal 10kΩ
resistor connected between the output and ground, help to keep
the gate voltage close to ground. When ~1V < V
DD
< UV, both
outputs are driven low while ignoring the logic inputs. This low
state has the same current sinking capacity as during normal
operation. This insures that the driven FETs are held off even if
there is a switching voltage on the drains that can inject charge
into the gates via the Miller capacitance. When V
DD
> UVLO, and
after a 400µs delay, the outputs now respond to the logic inputs.
See Figure 10
for complete details.
For the negative transition of V
DD
through the UV lockout voltage,
the outputs of input threshold Options A or B are active low when
V
DD
< ~3.2V
DC
regardless of the input logic states. Similarly, the
C option outputs are active low when V
DD
< ~6.5V
DC
.
Application Information
Precision Thresholds for Time Delays
Three input logic voltage levels are supported by the ISL89163,
ISL89164, ISL89165. Option A is used for 3.3V logic, Option B is
used for 5.0V logic, and Option C is used for higher voltage logic
when it is desired to have voltage thresholds that are
proportional to V
DD
. The A and B options have nominal
thresholds that are 37% and 63% of 3.3V and 5.0V respectively
and the C option is 20% and 80% of V
DD
.
In Figure 19
, R
del
and C
del
delay the rising edge of the input
signal. For the falling edge of the input signal, the diode shorts
out the resistor resulting in a minimal falling edge delay.
The 37% and 63% thresholds of Options A and B were chosen to
simplify the calculations for the desired time delays. When using
an RC circuit to generate a time delay, the delay is simply
T (secs) = R (ohms) x C (farads). Please note that this equation
only applies if the input logic voltage is matched to the 3.3V or 5V
threshold options. If the logic high amplitude is not equal to 3.3V
or 5V, then the equations shown in Equation 1
can be used for
more precise delay calculations.
In this example, the high logic voltage is 10V, the positive
threshold is 63% of 5V and the low level logic is 0.3V. Note the
rising edge propagation delay of the driver must be added to this
value.
The minimum recommended value of C is 100pF. The parasitic
capacitance of the PCB and any attached scope probes will
introduce significant delay errors if smaller values are used.
Larger values of C will further minimize errors.
Acceptable values of R are primarily effected by the source
resistance of the logic inputs. Generally, 100Ω resistors or larger
are usable.
Paralleling Outputs to Double the Peak Drive
Currents
The typical propagation matching of the ISL89163 and
ISL89164 is less than 1ns. The matching is so precise that
carefully matched and calibrated scopes probes and scope
channels must be used to make this measurement. Because of
this excellent performance, these driver outputs can be safely
paralleled to double the current drive capacity. It is important
that the INA and INB inputs be connected together on the PCB
with the shortest possible trace. This is also required of OUTA and
OUTB. Note that the ISL89165 cannot be paralleled because of
the complementary logic.
ENx
INx
R
del
c
del
D
OUTx
FIGURE 19. DELAY USING RCD NETWORK
(EQ. 1)
V
H
10V
High level of the logic signal into the RC
V
thres
63% 5 V
Positive going threshold for 5V logic (B option)
V
L
.3V
Low level of the logic signal into the RC
R
del
100
Timing values
C
del
1nF
t
del
R
del
C
del
ln
V
L
V
thres
V
H
V
L
1
t
del
34.788 ns
nominal delay time for this example
ISL89163, ISL89164, ISL89165
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October 13, 2016
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Power Dissipation of the Driver
The power dissipation of the ISL89163, ISL89164, ISL89165 is
dominated by the losses associated with the gate charge of the
driven bridge FETs and the switching frequency. The internal bias
current also contributes to the total dissipation, but is usually not
significant as compared to the gate charge losses.
Figure 20
illustrates how the gate charge varies with the gate
voltage in a typical power MOSFET. In this example, the total gate
charge for V
gs
= 10V is 21.5nC when V
DS
= 40V. This is the
charge that a driver must source to turn-on the MOSFET and
must sink to turn-off the MOSFET.
Equation 2
shows calculating the power dissipation of the driver:
where:
freq = Switching frequency,
V
GS
= V
DD
bias of the ISL89163, ISL89164, ISL89165
Q
c
= Gate charge for V
GS
I
DD
(freq) = Bias current at the switching frequency (see Figure 11)
r
DS(ON)
= ON-resistance of the driver
R
gate
= External gate resistance (if any).
Note that the gate power dissipation is proportionally shared with
the external gate resistor. Do not overlook the power dissipated
by the external gate resistor.
Typical Application Circuits
This drive circuit provides primary to secondary line isolation. A
controller, on the primary side, is the source of the SR control
signals OUTLLN and OUTLRN signals. The secondary side signals,
V1 and V2 are rectified by the dual diode, D9, to generate the
secondary side bias for U4. V1 and V3 are also inverted by Q100
and Q101 and the rising edges are delayed by R
27
/C
10
and
R
28
/C
9
respectively to generate the SR drive signals, LRN and
LLN. For more complete information on this SR drive circuit, and
other applications for the ISL89163, ISL89164, ISL89165, refer
to AN1603
“ISL6752/54EVAL1Z ZVS DC/DC Power Supply with
Synchronous Rectifiers User Guide”.
Q
g,
GATE CHARGE (nC)
12
10
8
6
4
2
0
024681012141618202224
V
gs
GATE-SOURCE VOLTAGE (V)
FIGURE 20. MOSFET GATE CHARGE vs GATE VOLTAGE
V
DS
= 64V
V
DS
= 40V
(EQ. 2)
P
D
2Q
c
freq V
GS
R
gate
R
gate
r
DS ON
+
---------------------------------------------
I
DD
freqV
DD
+=
R27
U4
U4
V1
V1
V2
ENABLE
R-SR
LSR
V4
V3
T6
OUTLLN
OUTLRN
LLN
LRN
LLN
PWM
ISL89163
D9
C10C9
R28
/OUTLRN
V2
/OUTLLN
LRL
V3
V4
LRN
VBIAS
Q100
Q101
EL7212
RED DASHED LINES POINT OUT THE
TURN-ON DELAY OF THE SRS WHEN
PWM GOES LOW
C123
PRIMARY TO SECONDARY SIDE
SELF BIASING, ISOLATED SR DRIVE
ISL89163, ISL89164, ISL89165
12
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October 13, 2016
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General PCB Layout Guidelines
The AC performance of the ISL89163, ISL89164, ISL89165
depends significantly on the design of the PC board. The
following layout design guidelines are recommended to achieve
optimum performance:
Place the driver as close as possible to the driven power FET.
Understand where the switching power currents flow. The high
amplitude di/dt currents of the driven power FET will induce
significant voltage transients on the associated traces.
Keep power loops as short as possible by paralleling the
source and return traces.
Use planes where practical; they are usually more effective
than parallel traces.
Avoid paralleling high amplitude di/dt traces with low level
signal lines. High di/dt will induce currents and consequently,
noise voltages in the low level signal lines.
When practical, minimize impedances in low level signal
circuits. The noise, magnetically induced on a 10k
Ω resistor, is
10x larger than the noise on a 1k
Ω resistor.
Be aware of magnetic fields emanating from transformers and
inductors. Gaps in the magnetic cores of these structures are
especially bad for emitting flux.
If you must have traces close to magnetic devices, align the
traces so that they are parallel to the flux lines to minimize
coupling.
The use of low inductance components, such as chip resistors
and chip capacitors, is highly recommended.
Use decoupling capacitors to reduce the influence of parasitic
inductance in the V
DD
and GND leads. To be effective, these
caps must also have the shortest possible conduction paths. If
vias are used, connect several paralleled vias to reduce the
inductance of the vias.
It may be necessary to add resistance to dampen resonating
parasitic circuits especially on OUTA and OUTB. If an external
gate resistor is unacceptable, then the layout must be
improved to minimize lead inductance.
Keep high dv/dt nodes away from low level circuits. Guard
banding can be used to shunt away dv/dt injected currents
from sensitive circuits. This is especially true for control circuits
that source the input signals to the ISL89163, ISL89164,
ISL89165.
Avoid having a signal ground plane under a high amplitude
dv/dt circuit. This will inject di/dt currents into the signal
ground paths.
Do power dissipation and voltage drop calculations of the
power traces. Many PCB/CAD programs have built in tools for
calculation of trace resistance.
Large power components (Power FETs, Electrolytic caps, power
resistors, etc.) will have internal parasitic inductance which
cannot be eliminated.
This must be accounted for in the PCB layout and circuit design.
If you simulate your circuits, consider including parasitic
components especially parasitic inductance.
General EPAD Heatsinking
Considerations
The thermal pad is electrically connected to the GND supply
through the IC substrate. The EPAD of the ISL89163, ISL89164,
ISL89165 has two main functions: to provide a quiet GND for the
input threshold comparators and to provide heat sinking for the
IC. The EPAD must be connected to a ground plane and no
switching currents from the driven FET should pass through the
ground plane under the IC.
Figure 21
is a PCB layout example of how to use vias to remove
heat from the IC through the EPAD.
For maximum heatsinking, it is recommended that a ground
plane, connected to the EPAD, be added to both sides of the PCB.
A via array, within the area of the EPAD, will conduct heat from
the EPAD to the GND plane on the bottom layer. The number of
vias and the size of the GND planes required for adequate
heatsinking is determined by the power dissipated by the
ISL89163, ISL89164, ISL89165, the air flow and the maximum
temperature of the air around the IC.
EPAD GND
PLANE
COMPONENT
LAYER
EPAD GND
PLANE
BOTTOM
LAYER
FIGURE 21. TYPICAL PCB PATTERN FOR THERMAL VIAS

ISL89165FRTAZ-T

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Gate Drivers 6A PEAK HI SPD PWR MSFT DRVR 8LD 3X3
Lifecycle:
New from this manufacturer.
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