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SI8503-C-IMR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36
Si85xx
Preliminary Rev. 0.4 7
Table 5. IEC 60747-5-2 Insulation Characteristics*
Parameter Symbol Test Condition Characteristic Unit
SOIC-20
Maximum Working Insulation Voltage V
IORM
1414 V peak
Input to Output Test Voltage V
PR
Method b1
(V
IORM
x 1.875 = V
PR
, 100%
Production Test, t
m
=1 sec,
Partial Discharge < 5 pC)
2652 V peak
Transient Overvoltage V
IOTM
t = 60 s 8000 V peak
Pollution Degree
(DIN VDE 0110, Table 1)
2
Insulation Resistance at T
S
, V
IO
=500V R
S
>10
9
W
Note: The Si85xx is suitable for basic and reinforced electrical isolation only within the safety limit data. Maintenance of the
safety data is ensured by protective circuits. The Si85xx provides a climate classification of 40/125/21. Note that the
Si85xx is compliant with the IEC60747-5-2 but neither certified nor inspected to IEC60747-5-2. The Si85xx is
compliant, certified, and factory-inspected to IEC60950.
Table 6. IEC Safety Limiting Values
1
Parameter Symbol Test Condition SOIC-20 Unit
Case Temperature T
S
150 °C
Safety Input Current I
S
JA
= 85, V
DD
=5.5V,
IIN to IOUT = 20 A,
T
J
=150°C, T
A
=25°C
30 A
Device Power Dissipation
2
P
D
0.9 W
Notes:
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figure 1.
2. The Si85xx is tested with V
DD
= 5.5 V, T
J
=150ºC, C
L
= 15 pF, and with an input current from IIN to IOUT equal to
20 Amps at 500 kHz (duty cycle = 50%).
Si85xx
8 Preliminary Rev. 0.4
Figure 1. SOIC-20 Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
Table 7. Thermal Characteristics
Parameter Symbol Test Condition SOIC-20 4x4 mm
QFN
Unit
IC Junction-to-Air Thermal Resistance
JA
85 55 °C/W
Table 8. Absolute Maximum Ratings
1
Parameter Symbol Min Typ Max Units
Storage temperature T
STG
–65 — +150 °C
Ambient temperature under bias T
A
–40 — +125 °C
Junction Temperature T
J
— — 150 °C
Supply voltage V
DD
— — 5.75 V
Voltage on any pin with respect to ground
(not including IIN, IOUT)
V
IN
–0.5 — VDD + 0.5 V
Output Current Drive L
O
—— 10mA
Lead solder temperature (10 s) — — 260 ºC
Maximum Input Current Rate of Change — — 1000 A/µs
Maximum Peak AC Input Current Limit — — 200 A
Thermal Limit (DC Current)
2
— — 30 A
Maximum Isolation Voltage (QFN) — — 1400 V
RMS
Maximum Isolation Voltage (SOIC-20) — — 6000 V
RMS
ESD (CDM) JEDEC (JESD22-C101C) –1.5 +1.5 kV
ESD (HBM) JEDEC (JESD22-A114E) –2500 +2500 V
ESD (MM) JEDEC (JESD22-A115A) –250 + 250 V
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2. Refer to “AN329: Extending the Full-Scale Range of the Si85xx” for more information.
020015010050
40
20
0
Case Temperature (ºC)
Safety-Limiting Current (A)
10
30
VDD = 5.5 V
IIN to IOUT = 20 Amps
Si85xx
Preliminary Rev. 0.4 9
2. Functional Overview
The Si85xx ac current sensor family of products mimics
the functionality of traditional current transformer (CT)
circuits with burden resistor, diode, and output filter, but
offers enhanced performance and added capabilities.
These devices use inductive current sensing and on-
board signal conditioning electronics to generate a 2 V
full-scale output signal proportional to the ac current
flowing from the IIN to the IOUT terminals. As shown in
Figures 2 and 3, current flowing through the metal
package slug induces a signal in the pickup coil on the
Si85xx die. This signal is applied to the input of an
integrator that reconstructs the ac current flowing from
IIN to IOUT. Onboard circuitry provides cycle-by-cycle
integrator reset and temperature and offset voltage
compensation to achieve initial measurement accuracy
to within ±5%.
Figure 2. Si850x (Single Output) Block Diagram
Figure 3. Si851x (Ping Pong Output) Block
Diagram
The Si85xx is superior to other current sensing
approaches and benefits the system in a number of
ways:
Small size: With its 4x4 mm footprint and 1 mm
height (QFN package option), the Si85xx is among
the smallest current sensors available.
Large output signal: The nominal 2.0 V full-scale
output swing offers superior noise immunity versus
other current sensing technologies.
Low loss: The Si85xx adds only 1.3 m (at 25 °C)
to the sensing path, making it one of the lowest-loss
current sensors available. Low 2 nH primary series
inductance is 2,000 times lower compared to a CT
and results in significantly less ringing.
High precision: All versions are available with an
initial maximum error of ±5% of reading; one of the
most accurate current sensors available.
Ping-Pong output mode (Si851x): Alternately
routes the current measurements from each side of
a full-bridge circuit to separate output pins for
comparison, which is very useful for transformer flux
balancing applications. Eliminates a second CT in a
full-bridge application.
Leading edge noise suppression: Filters out
reflected noise due to long reverse recovery time of
output rectifier. Eliminates the need for external
leading edge blanking circuit.
High common-mode voltage: The Si85xx offers a
minimum of 1,000 V
RMS
(for QFN package) or
5kV
RMS
(for SOIC package) of common-mode
voltage range (or isolation), making it useful over a
very wide voltage range.
Si850x
METAL SLUG
VDD1
TRST
IOUT
IIN
GND1
INTEGRATOR SIGNAL CONDITIONING
ADC
AUTO CALIBRATION
LOGIC
TEMP
SENSOR
OUT
VDD2
R1 R2
RESET LOGIC
GND2
NC
GND3
PICKUP
COIL
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SI8503-C-IMR

Mfr. #:
Buy SI8503-C-IMR
Manufacturer:
Silicon Labs
Description:
SENSOR CURRENT XFMR 20A AC
Lifecycle:
New from this manufacturer.
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