CY62167EV30 MoBL
®
Document Number: 38-05446 Rev. *N Page 16 of 19
Acronyms Document Conventions
Units of Measure
Acronym Description
BHE
byte high enable
BLE
byte low enable
CE
chip enable
CMOS complementary metal oxide semiconductor
I/O input/output
OE
output enable
SRAM static random access memory
TSOP thin small outline package
VFBGA very fine-pitch ball grid array
WE
write enable
Symbol Unit of Measure
°C degree Celsius
MHz megahertz
A microampere
s microsecond
mA milliampere
mm millimeter
ns nanosecond
ohm
% percent
pF picofarad
V volt
W watt
CY62167EV30 MoBL
®
Document Number: 38-05446 Rev. *N Page 17 of 19
Document History Page
Document Title: CY62167EV30 MoBL
®
, 16-Mbit (1 M × 16 / 2 M × 8) Static RAM
Document Number: 38-05446
Rev. ECN No.
Orig. of
Change
Submission
Date
Description of Change
** 202600 AJU 01/23/2004 New data sheet.
*A 463674 NXR See ECN Changed status from Advance Information to Preliminary
Removed ‘L’ bin and 35 ns speed bin from product offering
Modified Data sheet to include x8 configurability.
Changed ball E3 in FBGA pinout from DNU to NC
Changed the I
SB2(Typ)
value from 1.3 Ato1.5 A
Changed the I
CC(Max)
value from 40 mA to 25 mA
Changed Vcc stabilization time in footnote #9 from 100 µs to 200 µs
Changed the AC Test Load Capacitance value from 50 pF to 30 pF
Corrected typo in Data Retention Characteristics (t
R) from 100 µs to tRC ns
Changed t
OHA
, t
LZCE
, t
LZBE
, and t
LZWE
from 6 ns to 10 ns
Changed t
LZOE
from 3 ns to 5 ns.
Changed t
HZOE
, t
HZCE
, t
HZBE
, and t
HZWE
from 15 ns to 18 ns
Changed t
SCE
, t
AW
, and t
BW
from 40 ns to 35 ns
Changed t
PE
from 30 ns to 35 ns
Changed t
SD
from 20 ns to 25 ns
Updated 48-ball FBGA Package Information.
Updated the Ordering Information table
*B 469169 NSI See ECN Minor Change: Moved to external web
*C 1130323 VKN See ECN Changed status from Preliminary to Final.
Changed I
CC
max spec from 2.8 mA to 4.0 mA for f = 1MHz
Changed I
CC
typ spec from 22 mA to 25 mA for f = f
max
Changed I
CC
max spec from 25 mA to 30 mA for f = f
max
Added V
IL
spec for TSOP I package and footnote# 9
Added footnote# 10 related to I
SB2
and I
CCDR
Changed I
SB1
and I
SB2
spec from 8.5 A to 12 A
Changed I
CCDR
spec from 8 A to 10 A
Added footnote# 15 related to AC timing parameters
*D 1323984 VKN /
AESA
See ECN Modified I
CCDR
spec for TSOP I package
Added 48-ball VFBGA (6 × 7 × 1mm) package
Added footnote# 1 related to VFBGA (6 × 7 × 1mm) package
Updated Ordering Information table
*E 2678799 VKN /
PYRS
03/25/2009 Added Automotive-A information
*F 2720234 VKN /
AESA
06/17/2009 Included -45BVXA part in the Ordering information table
*G 2880574 VKN 02/18/2010 Modified I
CCDR
spec from 8 A to 10 A for Auto-A grade.
Added Contents.
Updated all package diagrams.
Updated links in Sales, Solutions, and Legal Information.
*H 2934396 VKN 06/03/10 Added footnote #25 related to chip enable.
Updated template.
*I 3006301 RAME 08/12/2010 Included BHE
and BLE in I
SB1
, I
SB2
, and I
CCDR
test conditions to reflect Byte
power down feature.
Removed 48-ball VFBGA (6 × 7 × 1 mm) package related information.
Added Acronyms and Ordering code definition.
Format updates to match template.
CY62167EV30 MoBL
®
Document Number: 38-05446 Rev. *N Page 18 of 19
*J 3295175 RAME 06/29/2011 Updated Package Diagrams.
Added Document Conventions.
Removed reference to AN1064 SRAM system guidelines.
Added I
SB1
to footnotes 10 and 13. Added byte enables to footnote 35 and
referenced to Truth table.
*K 3411301 TAVA 10/17/2011 Updated Switching Waveforms.
Updated Package Diagrams.
Updated in new template.
*L 3667939 TAVA 07/09/2012 Updated Ordering Information (No change in part numbers, updated details in
Package Type column only).
Updated Package Diagrams (Spec 51-85150 (Updated figure caption only, no
change in revision)).
*M 4102969 VINI 08/23/2013 Updated Switching Characteristics:
Updated Note 18.
Updated Package Diagrams:
spec 51-85150 – Changed revision from *G to *H.
Updated in new template.
Completing Sunset Review.
*N 4574264 VINI 11/19/2014 Added related documentation hyperlink in page 1.
Added note references 5 and 6 to Supply voltage to ground potential in
Maximum Ratings.
Added note 22 in Switching Characteristics. Provided note reference to Write
Cycle in the Switching Characteristics table.
Document History Page (continued)
Document Title: CY62167EV30 MoBL
®
, 16-Mbit (1 M × 16 / 2 M × 8) Static RAM
Document Number: 38-05446
Rev. ECN No.
Orig. of
Change
Submission
Date
Description of Change

CY62167EV30LL-45BVI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 16Mb 3V 45ns 1M x 16 LP SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union