Document Number: 38-05446 Rev. *N Page 4 of 19
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ............................... –65 °C to + 150 °C
Ambient temperature with
power applied ......................................... –55 °C to + 125 °C
Supply voltage to ground
potential
[5, 6]
....................–0.3 V to 3.9 V (V
CC(max)
+ 0.3 V)
DC voltage applied to outputs
in High Z state
[5, 6]
...........–0.3 V to 3.9 V (V
CC(max)
+ 0.3 V)
DC input voltage
[5, 6]
.......–0.3 V to 3.9 V (V
CC(max)
+ 0.3 V)
Output current into outputs (LOW) .............................20 mA
Static discharge voltage
(MIL-STD-883, Method 3015) ................................. >2001 V
Latch-up current .....................................................>200 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[7]
CY62167EV30LL Industrial /
Automotive-A
–40 °C to +85 °C 2.2 V to
3.6 V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
45 ns (Industrial/Automotive-A)
Unit
Min Typ
[8]
Max
V
OH
Output HIGH voltage 2.2 < V
CC
< 2.7 I
OH
= –0.1 mA 2.0 – – V
2.7 <
V
CC
< 3.6 I
OH
= –1.0 mA 2.4 – – V
V
OL
Output LOW voltage 2.2 < V
CC
< 2.7 I
OL
= 0.1 mA – – 0.4 V
2.7 < V
CC
< 3.6 I
OL
= 2.1 mA – – 0.4 V
V
IH
Input HIGH voltage 2.2 < V
CC
< 2.7 1.8 – V
CC
+ 0.3 V V
2.7 <
V
CC
< 3.6 2.2 – V
CC
+ 0.3 V V
V
IL
Input LOW voltage 2.2 < V
CC
< 2.7 –0.3 – 0.6 V
2.7 <
V
CC
< 3.6 For VFBGA package –0.3 – 0.8 V
For TSOP I package –0.3 – 0.7
[9]
V
I
IX
Input leakage current GND < V
I
< V
CC
–1 – +1 A
I
OZ
Output leakage current GND < V
O
< V
CC
, Output disabled –1 – +1 A
I
CC
V
CC
operating supply current f = f
max
= 1/t
RC
V
CC
= V
CC(max)
I
OUT
= 0 mA
CMOS levels
–25 30mA
f = 1 MHz – 2.2 4.0 mA
I
SB1
[10]
Automatic power down
current—CMOS inputs
CE
1
> V
CC
– 0.2 V or CE
2
< 0.2 V
or (BHE
and BLE) > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V,
f = f
max
(address and data only),
f = 0 (OE
, and WE), V
CC
= V
CC(max)
–1.5 12A
I
SB2
[10]
Automatic power down
current—CMOS inputs
CE1 > V
CC
– 0.2V or CE2 < 0.2 V or
(BHE
and BLE) > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= V
CC(max)
–1.5 12A
Notes
5. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
6. V
IH(max)
= V
CC
+ 0.75 V for pulse durations less than 20 ns.
7. Full Device AC operation assumes a 100 s ramp time from 0 to V
CC(min)
and 200 s wait time after V
CC
stabilization.
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
9. Under DC conditions the device meets a V
IL
of 0.8 V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.7 V. This is
applicable to TSOP I package only.
10. Chip enables (CE
1
and CE
2
), byte enables (BHE and BLE) and BYTE must be tied to CMOS levels to meet the I
SB1
/I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
