ML610Q435A-NNNTC0AGL Datasheet ML610Q435A-NNNTC0AGL, ML610Q435A-NNNTC03A7, ML610Q435 REFBOARD | P19-P21

FEDL610Q435-䋰2

LAPIS Semiconductor

ML610Q435/ML610Q436

19/35

TERMINATION OF UNUSED PINS

Table 3 shows methods of terminating the unused pins.

Table 3 Termination of Unused Pins

Pin Recommended pin termination

V

PP

Open

AV

DD

V

SS

AV

SS

V

SS

V

REF

V

SS

AIN0, AIN1

Open

V

L1

, V

L2

, V

L3

, V

L4

Open

C1, C2, C3, C4

Open

RESET_N

Open

TEST

Open

NMI

Open

P00 to P03

V

DD

or V

SS

P10 to P11

V

DD

P20 to P22

Open

P30 to P35

Open

P40 to P47

Open

PA0 to PA7

Open

COM0 to 23

Open

SEG0 to 63

Open

Note:

It is recommended to set the unused input ports and input/output ports to the inputs with pull-down resistors/pull-up resistors or

the output mode since the supply current may become excessively large if the pins are left open in the high impedance input

setting.

FEDL610Q435-䋰2

LAPIS Semiconductor

ML610Q435/ML610Q436

20/35

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS

(V

SS

= AV

SS

= 0V)

Parameter Symbol Condition Rating Unit

Power supply voltage 1

V

DD

Ta = 25qC 0.3 to +4.6 V

Power supply voltage 2

AV

DD

Ta = 25qC 0.3 to +4.6 V

Power supply voltage 3

V

PP

Ta = 25qC 0.3 to +9.5 V

Power supply voltage 4

V

DDL

Ta = 25qC 0.3 to +3.6 V

Power supply voltage 5

V

DDX

Ta = 25qC 0.3 to +3.6 V

Power supply voltage 6

V

L1

Ta = 25qC 0.3 to +1.75 V

Power supply voltage 7

V

L2

Ta = 25qC 0.3 to +3.5 V

Power supply voltage 8

V

L3

Ta = 25qC 0.3 to +5.25 V

Power supply voltage 9

V

L4

Ta = 25qC 0.3 to +7.0 V

Input voltage

V

IN

Ta = 25qC 0.3 to V

DD

+0.3 V

Output voltage

V

OUT

Ta = 25qC 0.3 to V

DD

+0.3 V

Output current 1

I

OUT1

Port3–A, Ta = 25qC 12 to +11 mA

Output current 2

I

OUT2

Port2, Ta = 25qC 12 to +20 mA

Power dissipation

PD Ta = 25qC 122 mW

Storage temperature

T

STG

 55 to +150 qC

RECOMMENDED OPERATING CONDITIONS

(V

SS

= AV

SS

= 0V)

Parameter Symbol Condition Range Unit

Operating temperature

T

OP

 20 to +70 qC

V

DD

 1.1 to 3.6

Operating voltage

AV

DD

 2.2 to 3.6

V

DD

= 1.1 to 3.6V 30k to 36k

V

DD

= 1.3 to 3.6V 30k to 650k

Operating frequency (CPU)

f

OP

V

DD

= 1.8 to 3.6V 30k to 4.2M

Hz

Low-speed crystal oscillation

frequency

f

XTL

 32.768k Hz

C

DL

 0 to 12

Low-speed crystal oscillation

external capacitor

C

GL

 0 to 12

pF

High-speed crystal/ceramic

oscillation frequency

f

XTH

 4.0M / 4.096M Hz

C

DH

 24

High-speed crystal oscillation

external capacitor

C

GH

 24

pF

C

L0

 1.0r30%

Capacitor externally connected to

V

DDL

C

L1

 0.1r30%

PF

Capacitor externally connected to

V

DDX

C

X

 0.1r30% PF

Capacitors externally connected to

V

L1, 2, 3, 4

pins

C

a, b, c, d

 1.0r30% PF

Capacitors externally connected

across C1 and C2 pins and across

C3 and C4 pins

C

12,

C

34

 1.0r30% PF

FEDL610Q435-䋰2

LAPIS Semiconductor

ML610Q435/ML610Q436

21/35

OPERATING CONDITIONS OF FLASH ROM

(V

SS

= AV

SS

= 0V)

Parameter Symbol Condition Range Unit

Operating temperature

T

OP

At write/erase 0 to +40 qC

V

DD

At write/erase

*1

2.75 to 3.6

V

DDL

At write/erase

*1

2.5 to 2.75

Operating voltage

V

PP

At write/erase

*1

7.7 to 8.3

V

Write cycles

C

EP

 80 cycles

Data retention

Y

DR

 10

years

*1

: In addition the power supply to VDD pin and VPP pin, within the range 2.5V to 2.75V has to be supplied to VDDL

pin when programming and eraseing Flash ROM

DC CHARACTERISTICS (1/5)

(V

DD

= 1.1 to 3.6V, AV

DD

= 2.2 to 3.6V, V

SS

= AV

SS

= 0V, Ta = 20 to +70qC, unless otherwise specified) (1/5)

Rating

Parameter Symbol Condition

Min. Typ. Max.

Unit

Measuring

circuit

Ta = 25qC

Typ.

10%

500

Typ.

10%

kHz

500kHz RC oscillation

frequency

f

RC

V

DD

= 1.3

to 3.6V

Ta = 20 to

+70qC

Typ.

25%

500

Typ.

25%

kHz

PLL oscillation frequency*

4

f

PLL

LSCLK = 32.768kHz

V

DD

= 1.8 to 3.6V

-2.5% 8.192 +2.5% MHz

Low-speed crystal oscillation

start time*

2

T

XTL

  0.3 2 s

500kHz RC oscillation start

time

T

RC

  50 500 Ps

High-speed crystal oscillation

start time*

3

T

XTH

V

DD

= 1.8 to 3.6V ʊ 2 20

PLL oscillation start time

T

PLL

V

DD

= 1.8 to 3.6V ʊ 1 10

Low-speed oscillation stop

detect time

*1

T

STOP

 0.2 3 20

ms

Reset pulse width

P

RST

 200  

Reset noise elimination

pulse width

P

NRST

   0.3

Ps

Power-on reset activation

power rise time

T

POR

   10 ms

1

*

1

: When low-speed crystal oscillation stops for a duration more than the low-speed oscillation stop detect time, the system is

reset to shift to system reset mode. “A”version(ML610Q435A/Q436A) don’t have this spec.

*

2

: Use 32.768KHz Crystal Oscillator C-001R (Epson Toyocom) with capacitance C

GL

/C

DL

㧩0pF.

*

3

: Use 4.096MHz Crystal Oscillator HC49SFWB (Kyocera).

*

4

: 1024 clock average.

RESET

RESET_N

4'5'6A0RKPTGUGV

VDD

0.9xV

DD

0.1xV

DD

T

POR

2QYGTQPTGUGV

P

RST

VIL1 VIL1

ML610Q435A-NNNTC0AGL

ML610Q435A-NNNTC0AGL

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