6.42
IDT70T3719/99M
High-Speed 2.5V 256/128K x 72 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
7
Absolute Maximum Ratings
(1)
Symbol Rating Commercial
& Industrial
Unit
V
TERM
(V
DD
)
V
DD
Terminal Voltage
with Respect to GND
-0.5 to 3.6 V
V
TERM
(2)
(V
DDQ
)
V
DDQ
Terminal Voltage
with Respect to GND
-0.3 to V
DDQ
+ 0.3 V
V
TERM
(2)
(INPUTS and I/O's)
Input and I/O Terminal
Voltage with Respect to GND
-0.3 to V
DDQ
+ 0.3 V
T
BIAS
(3)
Temperature Under Bias -55 to +125
o
C
T
STG
Storage Temperature -65 to +150
o
C
T
JN
Junction Temperature +150
o
C
I
OUT
(For V
DDQ
=
3.3V) DC Output Current 50 mA
I
OUT
(For V
DDQ
=
2.5V) DC Output Current 40 mA
5687 tbl 07
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has reached its
nominal operating value. Power sequencing is not necessary; however, the voltage on
any Input or I/O pin cannot exceed V
DDQ during power supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. C
OUT also references CI/O.
Capacitance
(1)
(TA = +25°C, F = 1.0MHZ)
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(VDD = 2.5V ± 100mV)
Symbol Parameter Test Conditions
70T3719/99M
UnitMin. Max.
|I
LI
| Input Leakage Current
(1)
V
DDQ
= Max., V
IN
= 0V to V
DDQ
___
10 µA
|I
LI
| JTAG & ZZ Input Leakage Current
(1,2)
V
DD =
Max.
,
V
IN
= 0V to V
DD
___
±30 µA
|I
LO
| Output Leakage Current
(1,3)
CE
0
= V
IH
or CE
1
= V
IL
, V
OUT
= 0V to V
DDQ
___
10 µA
V
OL
(3.3V) Output Low Voltage
(1)
I
OL
= +4mA, V
DDQ
= Min.
___
0.4 V
V
OH
(3.3V) Output High Voltage
(1)
I
OH
= -4mA, V
DDQ
= Min. 2.4
___
V
V
OL
(2.5V) Output Low Voltage
(1)
I
OL
= +2mA, V
DDQ
= Min.
___
0.4 V
V
OH
(2.5V) Output High Voltage
(1)
I
OH
= -2mA, V
DDQ
= Min. 2.0
___
V
5687 tbl 09
NOTES:
1. V
DDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.
2. Applicable only for TMS, TDI and TRST inputs.
3. Outputs tested in tri-state mode.
Symbol Parameter Conditions
(2)
Max. Unit
C
IN
Input Capacitance V
IN
= 0V 15 pF
C
OUT
(2)
Output Capacitance V
OUT
= 0V 10.5 pF
5687 tbl 08
