CY62167DV30 MoBL
®
Document Number: 38-05328 Rev. *M Page 4 of 18
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied .......................................... –55 °C to +125 °C
Supply voltage to ground potential ..... –0.2 V to V
CC
+ 0.3 V
DC voltage applied to outputs
in High-Z state
[5, 6]
............................. –0.2 V to V
CC
+ 0.3 V
DC input voltage
[5, 6]
..........................–0.2 V to V
CC
+ 0.3 V
Output current into outputs (LOW) .............................20 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) ......................... > 2001 V
Latch-up current ....................................................> 200 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[7]
CY62167DV30LL Industrial –40 °C to +85 °C 2.20 V to
3.60 V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
CY62167DV30-55 CY62167DV30-70
Unit
Min Typ
[8]
Max Min Typ
[8]
Max
V
OH
Output HIGH voltage I
OH
= –0.1 mA V
CC
= 2.20 V 2.0 2.0 V
I
OH
= –1.0 mA V
CC
= 2.70 V 2.4 2.4
V
OL
Output LOW voltage I
OL
= 0.1 mA V
CC
= 2.20 V 0.4 0.4 V
I
OL
= 2.1 mA V
CC
= 2.70 V
V
IH
Input HIGH voltage V
CC
= 2.2 V to 2.7 V 1.8 V
CC
+ 0.3 1.8 V
CC
+ 0.3 V
V
CC
= 2.7 V to 3.6 V 2.2 2.2
V
IL
Input LOW voltage V
CC
= 2.2 V to 2.7 V –0.3 0.6 –0.3 0.6 V
V
CC
= 2.7 V to 3.6 V 0.8 0.8
I
IX
Input leakage current GND V
I
V
CC
–1 +1 –1 +1 A
I
OZ
Output leakage current GND V
O
V
CC
, output
disabled
–1 +1 –1 +1 A
I
CC
V
CC
operating supply
current
V
CC
= V
CC(max)
I
OUT
= 0 mA
CMOS levels
f = f
Max
= 1/t
RC
15 30 12 25 mA
f = 1 MHz 2 4 2 4
I
SB1
Automatic power-down
current – CMOS inputs
CE
1
V
CC
0.2 V or CE
2
0.2 V,
V
IN
V
CC
– 0.2 V, V
IN
0.2 V,
f = f
Max
(address and data only),
f = 0 (OE, WE), V
CC
= 3.60 V
2.5 22 2.5 22 A
I
SB2
Automatic power-down
current – CMOS Inputs
CE
1
V
CC
– 0.2 V or
CE
2
0.2 V
V
IN
V
CC
– 0.2 V or V
IN
0.2V,
f = 0, V
CC
= 3.60 V
2.5 22 2.5 22 A
Notes
5. V
IL(min.)
= –2.0 V for pulse durations less than 20 ns.
6. V
IH(max)
= V
CC
+ 0.75 V for pulse durations less than 20 ns.
7. Full Device AC operation requires linear V
CC
ramp from 0 to V
CC(min.)
and V
CC
must be stable at V
CC(min)
for 500s.
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
CY62167DV30 MoBL
®
Document Number: 38-05328 Rev. *M Page 5 of 18
Capacitance
Parameter
[10]
Description Test Conditions Max Unit
C
IN
Input capacitance T
A
= 25 °C, f = 1 MHz, V
CC
= V
CC(typ)
8pF
C
OUT
Output capacitance 10 pF
Thermal Resistance
Parameter
[10]
Description Test Conditions VFBGA TSOP I Unit
JA
Thermal resistance
(junction to ambient)
Still air, soldered on a 3 × 4.5 inch, 2-layer
printed circuit board
55 60 C/W
JC
Thermal resistance
(junction to case)
16 4.3 C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
Parameters 2.5 V 3.0 V Unit
R1 16667 1103
R2 15385 1554
R
TH
8000 645
V
TH
1.20 1.75 V
CY62167DV30 MoBL
®
Document Number: 38-05328 Rev. *M Page 6 of 18
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions Min Typ
[9]
Max Unit
V
DR
V
CC
for data retention 1.5 V
I
CCDR
Data retention current V
CC
= 1.5 V,
CE
1
V
CC
– 0.2 V or CE
2
0.2 V,
V
IN
V
CC
– 0.2 V or V
IN
0.2 V
––10A
t
CDR
[10]
Chip deselect to data retention
time
0––ns
t
R
[11]
Operation recovery time CY62167DV30LL-55 55 ns
CY62167DV30LL-70 70
Data Retention Waveform
Figure 4. Data Retention Waveform
[12]
Notes
9. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
10. Tested initially and after any design or process changes that may affect these parameters.
11. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
100 s or stable at V
CC(min.)
100 s.
12. BHE
.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.

CY62167DV30LL-55ZXI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 16Mb 3V 55ns 1M x 16 LP SRAM
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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