DECEMBER 2014
DSC-5309/06
1
©2014 Integrated Device Technology, Inc.
Features
256K x 36, 512K x 18 memory configurations
Supports fast access times:
7.5ns up to 117MHz clock frequency
8.0ns up to 100MHz clock frequency
8.5ns up to 87MHz clock frequency
LBO input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte write
enable (BWE), and byte writes (BWx)
256K X 36, 512K X 18
3.3V Synchronous SRAMs
3.3V I/O, Burst Counter
Flow-Through Outputs, Single Cycle Deselect
IDT71V67703
IDT71V67903
Functional Block Diagram
A
0–
A
17/18
ADDRESS
REGISTER
CLR
A1*
A0*
18/19
2
18/19
A
2-
A
18
256K x 36/
512K x 18-
BIT
MEMORY
ARRAY
INTERNAL
ADDRESS
A
0
,A
1
BW
4
BW
3
BW
2
BW
1
Byte 1
Write Register
36/18
36/18
ADSP
ADV
CLK
ADSC
CS0
CS
1
Byte 1
Write Driver
Byte 2
Write Driver
Byte 3
Write Driver
Byte 4
Write Driver
Byte 2
Write Register
Byte 3
Write Register
Byte 4
Write Register
9
9
9
9
GW
CE
BWE
LBO
I/O
0
–I/O
31
I/O
P1–
I/O
P4
OE
DATA INPUT
REGISTER
36/18
OUTPUT
BUFFER
D
Q
Enable
Register
OE
Burst
Sequence
CEN
CLK EN
CLK EN
Q1
Q0
2
Burst
Logic
Binary
Counter
5309 drw 01
ZZ
Powerdown
,
3.3V core power supply
Power down controlled by ZZ input
3.3V I/O supply (VDDQ)
Packaged in a JEDEC Standard 100-pin thin plastic quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball
grid array (fBGA)
Green parts available see ordering information
6.422
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Description
The IDT71V67703/7903 are high-speed SRAMs organized as 256K
x 36/512K x 18. The IDT71V67703/7903 SRAMs contain write, data,
address and control registers. There are no registers in the data output
path (flow-through architecture). Internal logic allows the SRAM to
generate a self-timed write based upon a decision which can be left until
the end of the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V67703/7903 can provide four cycles of
data for a single address presented to the SRAM. An internal burst
address counter accepts the first cycle address from the processor,
initiating the access sequence. The first cycle of output data will flow-
through from the array after a clock-to-data access time delay from the
rising clock edge of the same cycle. If burst mode operation is selected
(ADV=LOW), the subsequent three cycles of output data will be available
to the user on the next three rising clock edges. The order of these three
addresses are defined by the internal burst counter and the LBO input pin.
The IDT71V67703/7903 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
Pin Description Summary
A
0
-A
18
Address Inputs Input Synchronous
CE
Chip Enable Input Synchronous
CS
0
, CS
1
Chip Selects Input Synchronous
OE
Output Enable Input Asynchronous
GW
Global Write Enable Input Synchronous
BWE
Byte Write Enable Input Synchronous
BW
1
, BW
2
, BW
3
, BW
4
(1)
Individual Byte Write Selects Input Synchronous
CLK Clock Input N/A
ADV
Burst Address Advance Input Synchronous
ADSC
Address Status (Cache Controller) Input Synchronous
ADSP
Address Status (Processor) Input Synchronous
LBO
Linear / Interleaved Burst Order Input DC
ZZ Sleep Mode Input Asynchronous
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
Data Input / Output I/O Synchronous
V
DD
, V
DDQ
Core Power, I/O Power Supply N/A
V
SS
Ground Supply N/A
5309 tbl 01
NOTE:
1. BW3 and BW4 are not applicable for the IDT71V67903.
6.42
3
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Symbol Pin Function I/O Active Description
A
0
-A
18
Address Inputs I N/A Synchronous Address inputs. The address register is triggered by a combi-nation of the
rising edge of CLK and ADSC Low or ADSP Low and CE Low.
ADSC
Address Status
(Cache Controller)
I LOW Synchronous Address Status from Cache Controller. ADSC is an active LOW input that is
used to load the address registers with new addresses.
ADSP
Address Status
(Processor)
I LOW Synchronous Address Status from Processor. ADSP is an active LOW input that is used to
load the address registers with new addresses. ADSP is gated by CE.
ADV
Burst Address
Advance
I LOW Synchronous Address Advance. ADV is an active LOW input that is used to advance the
internal burst counter, controlling burst access after the initial address is loaded. When the
input is HIGH the burst counter is not incremented; that is, there is no address advance.
BWE
Byte Write Enable I LOW Synchronous byte write enable gates the byte write inputs BW
1
-BW
4
. If BWE is LOW at the
rising edge of CLK then BWx inputs are passed to the next stage in the circuit. If BWE is
HIGH then the byte write inputs are blocked and only GW can initiate a write cycle.
BW
1
-BW
4
Individual Byte
Write Enables
I LOW Synchronous byte write enables. BW
1
controls I/O
0-7
, I/O
P1
, BW
2
controls I/O
8-15
, I/O
P2
, etc.
Any active byte write causes all outputs to be disabled.
CE
Chip Enable I LOW Synchronous chip enable. CE is used with CS
0
and CS
1
to enable the IDT71V67703/7903.
CE also gates ADSP.
CLK Clock I N/A This is the clock input. All timing references for the device are made with respect to this
input.
CS
0
Chip Select 0 I HIGH Synchronous active HIGH chip select. CS
0
is used with CE and CS
1
to enable the chip.
CS
1
Chip Select 1 I LOW Synchronous active LOW chip select. CS
1
is used with CE and CS
0
to enable the chip.
GW
Global Write
Enable
I LOW Synchronous global write enable. This input will write all four 9-bit data bytes when LOW
on the rising edge of CLK. GW supersedes individual byte write enables.
I/O
0
-I/O
31
I/O
P1
-I/O
P4
Data Input/Output I/O N/A Synchronous data input/output (I/O) pins. The data input path is registered, triggered by
the rising edge of CLK. The data output path is flow-through (no output register).
LBO
Linear Burst Order I LOW Asynchronous burst order selection input. When LBO is HIGH, the inter-leaved burst
sequence is selected. When LBO is LOW the Linear burst sequence is selected. LBO is a
static input and must not change state while the device is operating.
OE
Output Enable I LOW Asynchronous output enable. When OE is LOW the data output drivers are enabled on the
I/O pins if the chip is also selected. When OE is HIGH the I/O pins are in a high-
impedance state.
V
DD
Power Supply N/A N/A 3.3V core power supply.
V
DDQ
Power Supply N/A N/A 3.3V I/O Supply.
V
SS
Ground N/A N/A Ground.
NC No Connect N/A N/A NC pins are not electrically connected to the device.
ZZ Sleep Mode 1 HIGH Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down
the IDT71V67703/7903 to its lowest power consumption level. Data retention is guaranteed
in Sleep Mode.
5309 tbl 02
Pin Definitions
(1)
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.

71V67703S75BQG

Mfr. #:
Manufacturer:
IDT
Description:
SRAM 9M 3.3V PBSRAM SLOW F/T
Lifecycle:
New from this manufacturer.
Delivery:
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