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MTA18ASF1G72PF1Z-2G1T12AB

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24
Table 12: PowerGEM Proprietary Interface Connector (J3) (Continued)
Pin Signal Name Signal Type Description
3 Present/
Discharge
I/O This open drain signal is used by the NVRDIMM to force the Power-
GEM to begin discharging by driving LOW. A low voltage level detec-
ted by the NV controller on this pin indicates the PowerGEM is con-
nected. A high voltage level indicates the PowerGem is not connec-
ted.
4 Power_Fail_Int# Input Active LOW signal indicates input power is below defined threshold.
Can be used as an alternative trigger for SAVE_n. See PowerGEM da-
ta sheet.
5 V
SS
Supply Ground.
6 12C/V
DD_cap
Supply 12V supply to PowerGem from host. 12V supply from PowerGEM to
NVRDIMM when 12V rail is removed at host.
8GB (x72, ECC, SR) 288-Pin DDR4 Nonvolatile RDIMM
Electrical Specifications
PDF: 09005aef85c5dc9c
asf18c1gx72pf1z.pdf - Rev. C 03/16 EN
19
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR4 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 13: Module and Component Speed Grades
DDR4 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G6 -075
-2G4 -083E
-2G3 -083
-2G1 -093E
-1G9 -107E
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the edge connector of the module, not at the DRAM.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
8GB (x72, ECC, SR) 288-Pin DDR4 Nonvolatile RDIMM
DRAM Operating Conditions
PDF: 09005aef85c5dc9c
asf18c1gx72pf1z.pdf - Rev. C 03/16 EN
20
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 14: DDR4 I
DD
Specifications and Conditions – 8GB (Die Revision A)
Values are for the MT40A1G4 DDR4 SDRAM only and are computed from values specified in the 4Gb (1 Gig x 4) compo-
nent data sheet
Parameter Symbol 2400 2133 1866 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1152 1080 1044 mA
One bank ACTIVATE-PRECHARGE, word line boost, I
PP
current I
PP0
72 72 72 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1224 1170 1134 mA
Precharge standby current I
DD2N
900 828 792 mA
Precharge standby ODT current I
DD2NT
1044 972 900 mA
Precharge power-down current I
DD2P
576 540 540 mA
Precharge quiet standby current I
DD2Q
738 702 702 mA
Active standby current I
DD3N
1206 1134 1098 mA
Active standby I
PP
current I
PP3N
54 54 54 mA
Active power-down current I
DD3P
792 792 792 mA
Burst read current I
DD4R
2880 27002 2520 mA
Burst read I
DDQ
current I
DDQ4R
720 648 576 mA
Burst write current I
DD4W
3240 2880 2592 mA
Burst refresh current (1 x REF) I
DD5B
3456 3420 3420 mA
Burst refresh I
PP
current (1 x REF) I
PP5B
396 396 396 mA
Self refresh current: Normal temperature range (0°C to +85°C) I
DD6N
360 360 360 mA
Self refresh current: Extended temperature range (0°C to +95°C) I
DD6E
486 486 486 mA
Self refresh current: Reduced temperature range (0°C to +45°C) I
DD6R
180 180 180 mA
Auto self refresh current (25°C) I
DD6A
162 162 162 mA
Auto self refresh current (45°C) I
DD6A
180 180 180 mA
Auto self refresh current (75°C) I
DD6A
288 288 288 mA
Bank interleave read current I
DD7
3780 3330 2880 mA
Bank interleave read I
PP
current I
PP7
252 216 180 mA
Maximum power-down current I
DD8
324 324 324 mA
8GB (x72, ECC, SR) 288-Pin DDR4 Nonvolatile RDIMM
I
DD
Specifications
PDF: 09005aef85c5dc9c
asf18c1gx72pf1z.pdf - Rev. C 03/16 EN
21
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24

MTA18ASF1G72PF1Z-2G1T12AB

Mfr. #:
Buy MTA18ASF1G72PF1Z-2G1T12AB
Manufacturer:
Micron
Description:
MODULE DDR4 NVDIMM 8GB NVRDIMM-N
Lifecycle:
New from this manufacturer.
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