MT8JTF12864AY-1G4D1

PDF: 09005aef82b21119/Source: 09005aef82b2112c Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF8c128_256x64AY.fm - Rev. B 6/08 EN
10 ©2007 Micron Technology, Inc. All rights reserved
1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
Serial Presence-Detect
Serial Presence-Detect
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
Serial Presence-Detect Data
For the latest serial presence-detect data, refer to Microns SPD page:
www.micron.com/SPD.
Table 12: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to VSS
Parameter/Condition Symbol Min Max Units
Supply voltage VDDSPD 3.0 3.6 V
Input high voltage: Logic 1; All inputs V
IH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: Logic 0; All inputs V
IL –0.6 VDDSPD × 0.3 V
Output low voltage: IOUT = 3mA VOL –0.4V
Input leakage current: V
IN = GND to VDD ILI 0.10 3 µA
Output leakage current: V
OUT = GND to VDD ILO 0.05 3 µA
Standby current ISB 1.6 4 µA
Power supply current, READ: SCL clock frequency = 100 kHz I
CC
R
0.4 1 mA
Power supply current, WRITE: SCL clock frequency = 100 kHz I
CC
W
23mA
Table 13: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to VSS
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
SDA and SCL fall time
t
F 300 ns 2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I–50ns
Clock LOW period
t
LOW 1.3 µs
SDA and SCL rise time
t
R–0.3µs2
SCL clock frequency
f
SCL 400 kHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although
considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
Module Dimensions
PDF: 09005aef82b21119/Source: 09005aef82b2112c Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF8c128_256x64AY.fm - Rev. B 6/08 EN
11 ©2007 Micron Technology, Inc. All rights reserved.
Module Dimensions
Figure 3: 240-Pin DDR3 UDIMM
Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only.
30.50 (1.20)
29.85 (1.175)
Pin 1
17.3 (0.68)
TYP
2.50 (0.098) D
(2X)
2.30 (0.091) TYP
5.0 (0.197) TYP
123.0 (4.84)
TYP
1.0 (0.039)
TYP
0.80 (0.031)
TYP
0.75 (0.03) R
(8X)
0.76 (0.030) R
Pin 120
Front view
133.50 (5.256)
133.20 (5.244)
47.0 (1.85)
TYP
71.0 (2.79)
TYP
9.5 (0.374)
TYP
Back view
Pin 240
Pin 121
1.37 (0.054)
1.17 (0.046)
2.70 (0.106)
MAX
2.20 (0.087) TYP
1.45 (0.057) TYP
3.05 (0.12) TYP
54.68 (2.15)
TYP
3.0 (0.118) x4 TYP
No components this side of the module
U9
U1
U2
U3
U4
U5
U6
U7
U8

MT8JTF12864AY-1G4D1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 1GB 240UDIMM
Lifecycle:
New from this manufacturer.
Delivery:
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