MT8JTF12864AY-1G4D1

PDF: 09005aef82b21119/Source: 09005aef82b2112c Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF8c128_256x64AY.fm - Rev. B 6/08 EN
4 ©2007 Micron Technology, Inc. All rights reserved
1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
Pin Assignments and Descriptions
Table 6: Pin Descriptions
Symbol Type Description
A[14:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and
auto precharge bit for READ/WRITE commands, to select one location out of the memory array in
the respective bank. A10 is sampled during a PRECHARGE command to determine whether the
PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be
precharged, the bank is selected by BA. A12 is also used for BC4/BL8 identification as “BL on-the-fly”
during CAS commands.. The address inputs also provide the op-code during the mode register
command set
. A[13:0] (1GB), A[14:0] (2GB).
BA[2:0] Input Bank address inputs: BA[2:0] define the device bank to which an ACTIVATE, READ, WRITE, or
PRECHARGE command is being applied. BA[2:0] define which mode register, including MR, EMR,
EMR(2), and EMR(3), is loaded during the LOAD MODE command.
CK[1:0],
CK0#[1:0]
Input Clock: CK0 and CK0# are differential clock inputs. All contorl, command, and address input signals
are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data
(DQ and DQS/DQS#) is referenced to the crossings of CK and CK#. CK1, CK1# are terminated.
CKE0 Input Clock enable: CKE (registered HIGH) activates and CKE (registered LOW) deactivates clocking
circuitry on the DDR3 SDRAM.
DM[7:0] Input Input data mask: DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH, along with that input data, during a write access. DM is sampled on both edges of
DQS. Although DM pins are input-only, the DM loading is designed to match that of the DQ and DQS
pins.
ODT0 Input On-die termination: ODT (registered HIGH) enables termination resistance internal to the DDR3
SDRAM. When enabled, ODT is only applied to the following pins: DQ, DQS,DQS#, and DM. The ODT
input will be ignored if disabled via the LOAD MODE command.
RAS#, CAS#,
WE#
Input Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered.
RESET# Input Reset: RESET# is an active LOW CMOS input referenced to V
SS. The RESET# input receiver is a CMOS
input and is defined as a rail-to-rail signal with DC HIGH 0.8 x V
DD and DC LOW 0.2 x VDD. RESET#
assertion and desertion are asynchronous.
SA[2:0] Input Presence-detect address inputs: These pins are used to configure the SPD EEPROM address range.
SCL Input Serial clock for presence-detect: SCL is used to synchronize presence-detect data transfer to
and from the module.
S0# Input Chip select: S# enables (registered LOW) and disables (registered HIGH) the command decoder.
With both inputs HIGH, all outputs of the register(s) are disabled except for CKE and ODT. CKE, ODT
and chip select remain in previous state when both outputs are high.
DQ[63:0] I/O Data input/output: Bidirectional data bus.
DQS[7:0],
DQS#[7:0]
I/O Data strobe: Output with read data. Input with write data for source-synchronous operation. Edge-
aligned with read data. Center-aligned with write data. DQS# is only used when the differential
data strobe mode is enabled via the LOAD MODE command.
SDA I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into
and out of the SPD EEPROM on the module.
V
DD Supply Power supply: 1.5V ±0.075V.
VDDSPD Supply Serial EEPROM positive power supply: +3.0V to +3.6V.
V
REFDQ Supply Reference voltage: DQ, DM (VDD/2).
V
REFCA Supply Reference voltage: Control, command, and address (VDD/2).
V
SS Supply Ground.
V
TT Supply Termination voltage: Used for control, command, and address (VDD/2).
NC No connect: These pins are not connected on the module.
PDF: 09005aef82b21119/Source: 09005aef82b2112c Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF8c128_256x64AY.fm - Rev. B 6/08 EN
5 ©2007 Micron Technology, Inc. All rights reserved
1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
Functional Block Diagram
Functional Block Diagram
Figure 2: Functional Block Diagram
Notes: 1. The ZQ ball on each DDR3 component is connected to an external 240Ω ±1% resistor that is
tied to ground. It is used for the calibration of the component’s ODT and output driver.
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
ZQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U1
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
ZQ
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
U5
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
ZQ
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
U2
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
ZQ
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
U3
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
ZQ
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
U4
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
ZQ
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
U6
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
ZQ
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
U7
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
ZQ
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
U8
DM CS# DQS DQS#
DQS0#
DQS0
DM0
S0
#
DQS1#
DQS1
DM1
DQS2#
DQS2
DM2
DQS3#
DQS3
DM3
DQS4#
DQS4
DM4
DQS5#
DQS5
DM5
DQS6#
DQS6
DM6
DQS7#
DQS7
DM7
BA[2:0]
A[14/13:0]
RAS#
CAS#
WE#
CKE0
ODT0
RESET#
BA[2:0]: DDR3 SDRAM
A[14/13:0]: DDR3 SDRAM
RAS#: DDR3 SDRAM
CAS#: DDR3 SDRAM
WE#: DDR3 SDRAM
CKE0: DDR3 SDRAM
ODT0: DDR3 SDRAM
RESET#: DDR3 SDRAM
DDR3 SDRAM x8
CK0
CK0#
CK1
CK1#
A0
SPD EEPROM
A1
A2
SA0 SA1
SDA
SCL
WP
U9
V
REF
CA
V
SS
DDR3 SDRAM
DDR3 SDRAM
VDD
Control, command, and address termination
VDDSPD
SPD EEPROM
V
TT
DDR3 SDRAM
DDR3 SDRAM
V
REF
DQ
VSS
Clock, command, control, and address line terminations:
CKE0, A[14/13:0],
RAS#, CAS#, WE#,
S0#, ODT0, BA[2:0]
CK0
CK0#
SA2
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
DDR3
SDRAM
VTT
DDR3
SDRAM
VDD
PDF: 09005aef82b21119/Source: 09005aef82b2112c Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF8c128_256x64AY.fm - Rev. B 6/08 EN
6 ©2007 Micron Technology, Inc. All rights reserved
1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
General Description
General Description
The MT8JTF12864A and MT8JTF25664A DDR3 SDRAM modules are high-speed, CMOS
dynamic random access 1GB and 2GB memory modules organized in a x64 configura-
tion. These DDR3 SDRAM modules use internally configured, 8-bank 1Gb and 2Gb
DDR3 SDRAM devices.
DDR3 SDRAM modules use double data rate architecture to achieve high-speed opera-
tion. The double data rate architecture is essentially an 8n-prefetch architecture with an
interface designed to transfer two data words per clock cycle at the I/O pins. A single
read or write access for the DDR3 SDRAM module effectively consists of a single
8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corre-
sponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for
use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data
for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the
data strobes.
DDR3 SDRAM modules operate from a differential clock (CK and CK#); the crossing of
CK going HIGH and CK# going LOW will be referred to as the positive edge of CK.
Control, command, and address signals are registered at every positive edge of CK. Input
data is registered on both edges of DQS, and output data is referenced to both edges of
DQS, as well as to both edges of CK.
Fly-By Topology
These DDR3 modules use faster clock speeds than earlier DDR technologies, making
signal quality more important than ever. For improved signal quality, the clock, control,
command, and address busses have been routed in a fly-by topology, where each clock,
control, command, and address pin on each DRAM is connected to a single trace and
terminated (rather than a tree structure, where the termination is off the module near
the connector). Inherent to fly-by topology, the timing skew between the clock and DQS
signals can be easily accounted for by utilizing the write-leveling feature of DDR3.
Serial Presence-Detect EEPROM Operation
DDR3 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a
256-byte EEPROM. The first 128 bytes are programmed by Micron to comply with JEDEC
specification JC-45 “Appendix X: Serial Presence Detect (SPD) for DDR3 SDRAM
Modules.” These bytes identify module-specific timing parameters, configuration infor-
mation, and physical attributes. User-specific information can be written into the
remaining 128 bytes of storage. System READ/WRITE operations between the master
(system logic) and the slave EEPROM device occur via a standard I
2
C bus using the
DIMM’s SCL (clock) and SDA (data) signals, together with SA[2:0], which provide eight
unique DIMM/EEPROM addresses. Write protect (WP) is connected to V
SS, permanently
disabling hardware write protect.

MT8JTF12864AY-1G4D1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 1GB 240UDIMM
Lifecycle:
New from this manufacturer.
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