MT8JTF12864AY-1G4D1 Datasheet MT8JTF12864AY-1G4D1 | P7-P9

PDF: 09005aef82b21119/Source: 09005aef82b2112c Micron Technology, Inc., reserves the right to change products or specifications without notice.

JTF8c128_256x64AY.fm - Rev. B 6/08 EN

1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM

Electrical Specifications

Stresses greater than those listed in Table 7, may cause permanent damage to the

module. This is a stress rating only, and functional operation of the module at these or

any other conditions outside those indicated in each device’s data sheet is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reli-

ability.

Notes: 1. VREF must not be greater than 0.6 x VDD. When VDD is less than 500mV, VREF may be equal to

or less than 300mV.

Notes: 1. V

TT termination voltage in excess of stated limit will adversely affect the command and

address signals' voltage margin and will reduce timing margins.

2. T

and T

are simultaneous requirements.

3. The refresh rate is required to double when 85°C < T

≤ 95°C.

4. For further information, refer to technical note TN-00-08: “Thermal Applications,” available

on Micron’s Web site.

Table 7: Absolute Maximum Ratings

Symbol Parameter Min Max Units

VDD supply voltage relative to VSS –0.4 +1.975 V

VIN, VOUT Voltage on any pin relative to VSS –0.4 +1.975 V

I Input leakage current; Any input 0V ≤ VIN ≤ VDD;

VREF input 0V ≤ VIN ≤ 0.95V (All other pins not under

test = 0V)

Address inputs,

RAS#, CAS#, WE#,

S#, CKE, ODT, BA,

CK, CK#

–16 +16 µA

DM –2 +2

IOZ Output leakage current; 0V ≤ VOUT ≤ VDDQ; DQ and

ODT are disabled

DQ, DQS, DQS# –5 +5 µA

VREF VREF leakage current; VREF = valid VREF level –8 +8 µA

Table 8: Operating Conditions

Symbol Parameter Min Max Units

VTT Termination reference current from VTT –600 +600 mA

VTT

Termination reference voltage – command address bus –0.483 × VDD +0.517 × VDD V

2, 4

Module ambient operating temperature Commercial 0 +70 °C

Industrial –40 +85 °C

2, 4

DDR3 SDRAM component case operating

temperature

Commercial 0 +85 °C

Industrial –40 +95 °C

PDF: 09005aef82b21119/Source: 09005aef82b2112c Micron Technology, Inc., reserves the right to change products or specifications without notice.

JTF8c128_256x64AY.fm - Rev. B 6/08 EN

1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM

Electrical Specifications

DRAM Operating Conditions

Recommended AC operating conditions are given in the DDR3 component data sheets.

Component specifications are available on Micron’s Web site. Module speed grades

correlate with component speed grades, as shown in Table 9.

Design Considerations

Simulations

Micron memory modules are designed to optimize signal integrity through carefully

designed terminations, controlled board impedances, routing topologies, trace length

matching, and decoupling. However, good signal integrity starts at the system level.

Micron encourages designers to simulate the signal characteristics of the system’s

memory bus to ensure adequate signal integrity of the entire memory system.

Power

Operating voltages are specified at the DRAM, not at the edge connector of the module.

Designers must account for any system voltage drops at anticipated power levels to

ensure the required supply voltage is maintained.

Table 9: Module and Component Speed Grades

DDR3 components may exceed the listed module speed grades

Module Speed Grade Component Speed Grade

-1G4 -15E

-1G3 -15

-1G1 -187E

-1G0 -187

-80C -25E

-80B -25

PDF: 09005aef82b21119/Source: 09005aef82b2112c Micron Technology, Inc., reserves the right to change products or specifications without notice.

JTF8c128_256x64AY.fm - Rev. B 6/08 EN

1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM

Electrical Specifications

IDD Specifications

Table 10: DDR3 IDD Specifications and Conditions – 1GB

Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the

1Gb (128 Meg x 8) component data sheet

Parameter Symbol 1333 1066 800 Units

Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 880 800 720 mA

Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I

DD1 1,040 960 880 mA

Precharge power-down current: Slow exit IDD2P 80 80 80 mA

Precharge power-down current: Fast exit I

DD2P 200 200 200 mA

Precharge quiet standby current I

DD2Q 400 360 320 mA

Precharge standby current IDD2N 440 400 360 mA

Active power-down current I

DD3P 280 240 200 mA

Active standby current I

DD3N 480 440 400 mA

Burst read operating current IDD4R 1,600 1,280 1,040 mA

Burst write operating current I

DD4W 1,520 1,280 1,040 mA

Refresh current I

DD5B 1,920 1,760 1,600 mA

Self refresh temperature current: MAX T

= 85°C IDD6484848mA

Self refresh temperature current (SRT-enabled): MAX T

= 95°C IDD6ET 72 72 72 mA

All banks interleaved read current I

DD7 3,920 3,120 2,800 mA

Table 11: DDR3 IDD Specifications and Conditions – 2GB

Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the

2Gb (256 Meg x 8) component data sheet

Parameter Symbol 1333 1066 800 Units

Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 1,040 960 800 mA

Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I

DD1 1,240 1,080 920 mA

Precharge power-down current: Slow exit IDD2P 80 80 80 mA

Precharge power-down current: Fast exit I

DD2P 200 200 200 mA

Precharge quiet standby current I

DD2Q 560 480 400 mA

Precharge standby current I

DD2N 560 480 400 mA

Active power-down current I

DD3P 480 400 360 mA

Active standby current I

DD3N 720 600 520 mA

Burst read operating current IDD4R 2,040 1,800 1,560 mA

Burst write operating current I

DD4W 2,400 2,120 1,840 mA

Refresh current I

DD5B 2,440 2,320 2,200 mA

Self refresh temperature current: MAX T

= 85°C IDD6727272mA

Self refresh temperature current (SRT-enabled): MAX T

= 95°C IDD6ET 96 96 96 mA

All banks interleaved read current I

DD7 3,680 3,440 3,200 mA

P1-P3 P4-P6 P7-P9 P10-P11

MT8JTF12864AY-1G4D1

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Manufacturer:

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Description:

MODULE DDR3 SDRAM 1GB 240UDIMM

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