OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

A2T21S260-12SR3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
A2T21S260--12SR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 65 W RF pow er LDMOS transistor is designed for cellular base station
applications covering the frequency range of 2110 to 2170 MHz.
2100 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQ
= 1200 mA, P
out
= 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz 18.5 30.4 6.9 –32.6 –17
2140 MHz 18.6 30.3 6.8 –32.8 –13
2170 MHz 18.7 30.6 6.8 –32.0 –11
Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
Document Number: A2T21S260--12S
Rev. 0, 8/2015
Freescale Semiconductor
Technical Data
2110–2170 MHz, 65 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
A2T21S260--12SR3
Figure 1. Pin Connections
NI--780S--2L2L
(Top View)
RF
in
/V
GS
VBW
(1)
VBW
(1)
4
2
13
RF
out
/V
DS
1. Device cannot operate with V
DD
current
supplied through pin 2 and pin 4.
Freescale Semiconductor, Inc., 2015. All rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
A2T21S260--12SR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
–0.5, +65 Vdc
Gate--Source Voltage V
GS
–6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
–65 to +150 C
Case Operating Temperature Range T
C
–40 to +150 C
Operating Junction Temperature Range
(1,2)
T
J
–40 to +225 C
CW Operation @ T
C
=25C
Derate above 25C
CW 346
3.1
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76C, 65 W CW, 28 Vdc, I
DQ
= 1200 mA, 2140 MHz
R
JC
0.28 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
— — 10 Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=32Vdc,V
GS
=0Vdc)
I
DSS
— — 1 Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 Adc
On Characteristics
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 270 Adc)
V
GS(th)
0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
D
= 1200 mAdc, Measured in Functional Test)
V
GS(Q)
1.4 1.9 2.2 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=2.7Adc)
V
DS(on)
0.1 0.2 0.3 Vdc
Functional Tests
(4)
(In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 1200 mA, P
out
= 65 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Power Gain
G
ps
18.0 18.7 21.0 dB
Drain Efficiency
D
29.0 30.6 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.3 6.8 — dB
Adjacent Channel Power Ratio ACPR — –32.0 –29.0 dBc
Input Return Loss IRL — –11 –8 dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf/calculators.
3. Refer to AN1955
, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
4. Part internally matched both on input and output.
(continued)
A2T21S260--12SR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) I
DQ
= 1200 mA, f = 2140 MHz, 12 sec(on), 12% Duty Cycle
VSWR 5:1 at 32 Vdc, 290 W Pulsed CW Output Power
(0 dB Input Overdrive from 208 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 1200 mA, 2110–2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, Pulse P1dB — 208 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2170 MHz bandwidth)
— –20.9 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 90 — MHz
Gain Flatness in 60 MHz Bandwidth @ P
out
=65WAvg. G
F
— 0.3 — dB
Gain Variation over Temperature
(–30Cto+85C)
G — 0.015 — dB/C
Output Power Variation over Temperature
(–30Cto+85C)
(1)
P1dB — 0.013 — dB/C
Table 5. Ordering Information
Device Tape and Reel Information Package
A2T21S260--12SR3 R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel NI--780S--2L2L
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

A2T21S260-12SR3

Mfr. #:
Buy A2T21S260-12SR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 65 W Avg., 28 V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet