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A2T21S260-12SR3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
A2T21S260--12SR3
7
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Load Pull Performance — Maximum Power Tuning — Class AB
V
DD
=28Vdc,I
DQ
= 1181 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 2.87 – j5.93 2.53 + j5.00 1.28 – j3.01 18.5 55.3 337 58.4 –19
2140 3.74 – j6.26 3.18 + j5.38 1.32 – j2.92 18.9 55.1 327 57.5 –20
2170 5.24 – j6.85 4.26 + j5.74 1.27 – j2.92 18.9 55.2 328 56.6 –20
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 2.87 – j5.93 2.60 + j5.30 1.28 – j3.18 16.3 56.0 397 60.1 –24
2140 3.74 – j6.26 3.35 + j5.73 1.35 – j3.09 16.7 55.8 383 59.0 –26
2170 5.24 – j6.85 4.63 + j6.10 1.33 – j3.13 16.7 55.8 384 58.5 –26
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 8. Load Pull Performance — Maximum Drain Efficiency Tuning — Class AB
V
DD
=28Vdc,I
DQ
= 1181 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 2.87 – j5.93 2.62 + j5.21 2.58 – j1.61 21.3 53.2 208 70.0 –30
2140 3.74 – j6.26 3.31 + j5.58 2.27 – j1.61 21.4 53.3 213 67.7 –30
2170 5.24 – j6.85 4.49 + j5.93 2.03 – j1.59 21.5 53.4 220 68.5 –31
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 2.87 – j5.93 2.66 + j5.40 2.51 – j2.06 18.9 54.3 268 70.6 –35
2140 3.74 – j6.26 3.50 + j5.81 2.45 – j1.78 19.2 54.0 250 68.6 –38
2170 5.24 – j6.85 4.79 + j6.16 2.15 – j1.87 19.2 54.3 270 69.2 –37
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
A2T21S260--12SR3
P1dB – TYPICAL LOAD PULL CONTOURS — 2140 MHz — CLASS AB
–0.5
–1.5
IMAGINARY ()
1.5 2
2.51
5
–1
–2.5
–4
3
–2
0
–3
–3.5
3.5 4 4.5
–0.5
–1.5
IMAGINARY ()
1.5 2
2.51
5
–1
–2.5
–4
3
–2
0
–3
–3.5
3.5 4 4.5
–0.5
–1.5
IMAGINARY ()
1.5 2
2.51
5
–1
–2.5
–4
3
–2
0
–3
–3.5
3.5 4 4.5
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 8. P1dB Load Pull Output Power C ontours (dBm)
REAL ()
–0.5
–1.5
IMAGINARY ()
1.5 2
2.51
5
–1
–2.5
–4
Figure 9. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
REAL ()
3
–2
0
–3
–3.5
3.5 4
4.5
P
E
51.5
51
52
52.5
53
53.5
54
54.5
55
60
58
54
56
64
66
P
E
52
62
54
56
52
18.5
21
20
P
E
19
19.5
20.5
21.5
22
22.5
P
E
–18
–20
–22
–24
–26
–28
–30
–32
–34
A2T21S260--12SR3
9
RF Device Data
Freescale Semiconductor, Inc.
P3dB – TYPICAL LOAD PULL CONTOURS — 2140 MHz — CLASS AB
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 12. P3dB Load Pull Output Power C ontours (dBm)
REAL ()
–5
0
–2
IMAGINARY ()
22.53
1
4
–1
–4
1.5
Figure 13. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
REAL ()
–3
3.5
–5
0
–2
IMAGINARY ()
22.53
1
4
–1
–4
1.5
–3
3.5
–5
0
–2
IMAGINARY ()
22.53
1
4
–1
–4
1.5
–3
3.5
–5
0
–2
IMAGINARY ()
22.53
1
4
–1
–4
1.5
–3
3.5
P
E
53.5
54
52.5
52
53
53.5
54
54.5
55
55.5
P
E
52
54
58
60
62
64
56
66
68
62
52
54
17
P
E
16.5
17.5
18
18.5
19
19.5
20
20.5
–24
P
E
–26
–28
–30
–32
–34
–36
–38
–40
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

A2T21S260-12SR3

Mfr. #:
Buy A2T21S260-12SR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 65 W Avg., 28 V
Lifecycle:
New from this manufacturer.
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