10
RF Device Data
Freescale Semiconductor, Inc.
A2T21S260--12SR3
Table 9. Load Pull Performance — Maximum Power Tuning — Class C
V
DD
=28Vdc,V
GSB
=0.8Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 2.40 – j4.69 2.19 + j4.95 1.11 – j3.01 15.1 55.3 341 56.8 –30
2140 3.16 – j5.17 2.83 + j5.43 1.15 – j2.88 15.3 55.3 336 56.9 –31
2170 4.24 – j5.24 3.94 + j5.93 1.13 – j2.89 15.2 55.3 338 56.5 –31
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 2.40 – j4.69 2.35 + j5.22 1.33 – j3.21 13.2 55.9 393 61.8 –37
2140 3.16 – j5.17 3.15 + j5.73 1.17 – j3.05 13.1 56.0 394 58.4 –38
2170 4.24 – j5.24 4.50 + j6.23 1.15 – j3.05 13.1 56.0 396 58.9 –37
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 10. Load Pull Performance — Maximum Drain Efficiency Tuning — Class C
V
DD
=28Vdc,V
GSB
=0.8Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 2.40 – j4.69 1.98 + j4.94 2.73 – j2.04 16.4 53.5 223 69.7 –39
2140 3.16 – j5.17 2.59 + j5.44 2.50 – j1.84 16.4 53.4 220 68.1 –40
2170 4.24 – j5.24 3.61 + j5.98 2.33 – j1.78 16.3 53.5 226 69.0 –39
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 2.40 – j4.69 2.20 + j5.20 2.96 – j2.28 14.2 54.0 250 69.6 –47
2140 3.16 – j5.17 2.94 + j5.73 2.73 – j1.99 14.2 53.9 247 68.1 –49
2170 4.24 – j5.24 4.16 + j6.27 2.56 – j1.69 14.2 53.8 241 69.3 –50
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
