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A2T21S260-12SR3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
4
RF Device Data
Freescale Semiconductor, Inc.
A2T21S260--12SR3
Figure 2. A2T21S260--12SR3 Test Circuit Component Layout
D65935
A2T21S260--12S
Rev. 1
CUT OUT AREA
C1
V
GG
V
DD
V
GG
V
DD
C3
C4
R2
C2
C5
C6
R1
C10
C7
C11
C9
C15
C16
C8
C13
C12
C14
Table 6. A2T21S260--12SR3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C4, C6, C16 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC
C2 1.0 pF Chip Capacitor ATC100B1R0BT500XT ATC
C3, C5, C7, C8, C10, C13 10 uF Chip Capacitors C5750X7S2A106M230KB TDK
C9, C14 470 uF, 100 V Electrolytic Capacitors MCGPR100V477M16X32-RH Multicomp
C11, C12 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C15 0.1 pF Chip Capacitor ATC600F0R1BT250XT ATC
R1, R2
2.2 Ω, 1/4 W Chip Resistors
CRCW12062R20JNEA Vishay
PCB Rogers RO4350B, 0.020,
r
=3.66 D65939 MTL
A2T21S260--12SR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
–25
–5
–10
–15
–20
–30
PARC (dB)
–3.4
–2.6
–2.8
–3
–3.2
–3.6
2060
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 65 Watts Avg.
18.1
19.1
19
18.9
–34
32
31.5
31
30.5
–29
–30
–31
–32
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
18.8
18.7
18.6
18.5
18.4
18.3
18.2
2080 2100 2120 2140 2160 2180 2200 2220
30
–33
ACPR (dBc)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
–75
0
–15
–30
–60
1 200
IMD, INTERMODULA TION DISTORTION (dBc)
–45
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
P
out
, OUTPUT POWER (WATTS)
–1
–3
35
0
–2
–4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
20 50 65 95
10
40
35
30
25
20
15
D
DRAIN EFFICIENCY (%)
80
D
PARC
ACPR (dBc)
–50
–20
–25
–30
–40
–35
–45
19
G
ps
, POWER GAIN (dB)
18.8
18.6
18.4
18.2
18
17.8
G
ps
–5
1
ACPR
D
PARC
G
ps
V
DD
=28Vdc,P
out
=65W(Avg.),I
DQ
= 1200 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
V
DD
=28Vdc,P
out
= 162 W (PEP)
I
DQ
= 1200 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM5--U
IM7--L
IM7--U
100
–1 dB = 35 W
IM5--L
IM3--U
IM3--L
–2 dB = 49 W
–3 dB = 64 W
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
ACPR
IRL
V
DD
=28Vdc,I
DQ
= 1200 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
6
RF Device Data
Freescale Semiconductor, Inc.
A2T21S260--12SR3
TYPICAL CHARACTERISTICS
1
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–10
–20
10
22
0
60
50
40
30
20
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
20
18
10 400
10
–60
ACPR (dBc)
16
14
12
0
–30
–40
–50
Figure 7. Broadband Frequency Response
9
27
f, FREQUENCY (MHz)
V
DD
=28Vdc
P
in
=0dBm
I
DQ
= 1200 mA
21
18
15
GAIN (dB)
24
12
1700 1850 2000 2150 2300 2450 2600 2750 2900
Gain
ACPR
D
G
ps
2110 MHz
V
DD
=28Vdc,I
DQ
= 1200 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
100
2170 MHz
2140 MHz
2110 MHz
2140 MHz
2170 MHz
2110 MHz
2140 MHz
2170 MHz
-- 3 0
6
0
–6
-- 1 2
-- 1 8
IRL (dB)
-- 2 4
IRL
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

A2T21S260-12SR3

Mfr. #:
Buy A2T21S260-12SR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 65 W Avg., 28 V
Lifecycle:
New from this manufacturer.
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