DDR2 SDRAM SODIMM
MT8HTF12864HZ – 1GB
MT8HTF25664HZ – 2GB
Features
200-pin, small-outline dual in-line memory module
(SODIMM)
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, PC2-6400, or PC2-8500
1GB (128 Meg x 64), 2GB (256 Meg x 64)
V
DD
= V
DDQ
1.8V
V
DDSPD
= 1.7–3.6V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Multiple internal device banks for concurrent opera-
tion
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Programmable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Serial presence detect (SPD) with EEPROM
Gold edge contacts
Single rank
Halogen-free
Figure 1: 200-Pin SODIMM (MO-224 R/C B)
Module height: 30mm (1.18in)
Options Marking
Operating temperature
Commercial (0°C T
A
+70°C) None
Industrial (–40°C T
A
+85°C)
1
I
Package
200-pin DIMM (halogen-free) Z
Frequency/CL
2
1.875ns @ CL = 7 (DDR2-1066)
1
-1GA
2.5ns @ CL = 5 (DDR2-800) -80E
2.5ns @ CL = 6 (DDR2-800) -800
3.0ns @ CL = 5 (DDR2-667) -667
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s) t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 7 CL = 6 CL = 5 CL = 4 CL = 3
-1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125
-80E PC2-6400 800 800 533 400 12.5 12.5 57.5
-800 PC2-6400 800 667 533 400 15 15 60
-667 PC2-5300 667 553 400 15 15 60
-53E PC2-4200 553 400 15 15 55
-40E PC2-3200 400 400 15 15 55
1GB, 2GB (x64, SR) 200-Pin DDR2 SDRAM SODIMM
Features
PDF: 09005aef83c2a451
htf8c128_256x64hz.pdf - Rev. E 4/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 1GB 2GB
Refresh count 8K 8K
Row address 16K A[13:0] 32K A[14:0]
Device bank address 8 BA[2:0] 8 BA[2:0]
Device configuration 1Gb (128 Meg x 8) 2Gb (256 Meg x 8)
Column address 1K A[9:0] 1K A[9:0]
Module rank address 1 S0# 1 S0#
Table 3: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H128M8,
1
1Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT8HTF12864H(I)Z-1GA__ 1GB 128 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7
MT8HTF12864H(I)Z-80E__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT8HTF12864H(I)Z-800__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT8HTF12864H(I)Z-667__ 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Table 4: Part Numbers and Timing Parameters – 2GB Modules
Base device: MT47H256M8,
1
2Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT8HTF25664H(I)Z-1GA__ 2GB 256 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7
MT8HTF25664H(I)Z-80E__ 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT8HTF25664H(I)Z-800__ 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT8HTF25664H(I)Z-667__ 2GB 256 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Notes:
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT8HTF12864HZ-667M1.
1GB, 2GB (x64, SR) 200-Pin DDR2 SDRAM SODIMM
Features
PDF: 09005aef83c2a451
htf8c128_256x64hz.pdf - Rev. E 4/14 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Pin Assignments
Table 5: Pin Assignments
200-Pin DDR2 SODIMM Front 200-Pin DDR2 SODIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1 V
REF
51 DQS2 101 A1 151 DQ42 2 V
SS
52 DM2 102 A0 152 DQ46
3 V
SS
53 V
SS
103 V
DD
153 DQ43 4 DQ4 54 V
SS
104 V
DD
154 DQ47
5 DQ0 55 DQ18 105 A10/AP 155 V
SS
6 DQ5 56 DQ22 106 BA1 156 V
SS
7 DQ1 57 DQ19 107 BA0 157 DQ48 8 V
SS
58 DQ23 108 RAS# 158 DQ52
9 V
SS
59 V
SS
109 WE# 159 DQ49 10 DM0 60 V
SS
110 S0# 160 DQ53
11 DQS0# 61 DQ24 111 V
DD
161 V
SS
12 V
SS
62 DQ28 112 V
DD
162 V
SS
13 DQS0 63 DQ25 113 CAS# 163 NC 14 DQ6 64 DQ29 114 ODT0 164 CK1
15 V
SS
65 V
SS
115 NC 165 V
SS
16 DQ7 66 V
SS
116 A13 166 CK1#
17 DQ2 67 DM3 117 V
DD
167 DQS6# 18 V
SS
68 DQS3# 118 V
DD
168 V
SS
19 DQ3 69 NC 119 NC 169 DQS6 20 DQ12 70 DQS3 120 NC 170 DM6
21 V
SS
71 V
SS
121 V
SS
171 V
SS
22 DQ13 72 V
SS
122 V
SS
172 V
SS
23 DQ8 73 DQ26 123 DQ32 173 DQ50 24 V
SS
74 DQ30 124 DQ36 174 DQ54
25 DQ9 75 DQ27 125 DQ33 175 DQ51 26 DM1 76 DQ31 126 DQ37 176 DQ55
27 V
SS
77 V
SS
127 V
SS
177 V
SS
28 V
SS
78 V
SS
128 V
SS
178 V
SS
29 DQS1# 79 CKE0 129 DQS4# 179 DQ56 30 CK0 80 NC 130 DM4 180 DQ60
31 DQS1 81 V
DD
131 DQS4 181 DQ57 32 CK0# 82 V
DD
132 V
SS
182 DQ61
33 V
SS
83 NC 133 V
SS
183 V
SS
34 V
SS
84 NC 134 DQ38 184 V
SS
35 DQ10 85 BA2 135 DQ34 185 DM7 36 DQ14 86 NC/A14
1
136 DQ39 186 DQS7#
37 DQ11 87 V
DD
137 DQ35 187 V
SS
38 DQ15 88 V
DD
138 V
SS
188 DQS7
39 V
SS
89 A12 139 V
SS
189 DQ58 40 V
SS
90 A11 140 DQ44 190 V
SS
41 V
SS
91 A9 141 DQ40 191 DQ59 42 V
SS
92 A7 142 DQ45 192 DQ62
43 DQ16 93 A8 143 DQ41 193 V
SS
44 DQ20 94 A6 144 V
SS
194 DQ63
45 DQ17 95 V
DD
145 V
SS
195 SDA 46 DQ21 96 V
DD
146 DQS5# 196 V
SS
47 V
SS
97 A5 147 DM5 197 SCL 48 V
SS
98 A4 148 DQS5 198 SA0
49 DQS2# 99 A3 149 V
SS
199 V
DDSPD
50 NC 100 A2 150 V
SS
200 SA1
Note:
1. Pin 86 is NC for 1GB or A14 for 2GB.
1GB, 2GB (x64, SR) 200-Pin DDR2 SDRAM SODIMM
Pin Assignments
PDF: 09005aef83c2a451
htf8c128_256x64hz.pdf - Rev. E 4/14 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

MT8HTF25664HZ-800C1

Mfr. #:
Manufacturer:
Micron
Description:
Memory Modules DDR2 2GB SODIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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