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IS61WV25616BLL-10KLI

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
4 Integrated Silicon Solution, Inc. — www.issi.com
Rev. H1
02/10/2017
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.4V-3.6V
Symbol Parameter Test Conditions Min. Max. Unit
VoH Output HIGH Voltage Vdd = Min., IoH = –1.0mA 1.8 — V
VoL Output LOW Voltage Vdd = Min., IoL = 1.0 mA — 0.4 V
VIH Input HIGH Voltage 2.0 Vdd + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND ≤ VIn ≤ Vdd
–1 1 µA
ILo Output Leakage
GND ≤ Vout ≤ Vdd, Outputs Disabled –1 1 µA
Note:
1.
VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 20 ns). Not 100% tested.
VIH (max.) = Vdd + 0.3V dc; VIH (max.) = Vdd + 2.0V Ac (pulse width < 20 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 3.3V + 5%
Symbol Parameter Test Conditions Min. Max. Unit
VoH Output HIGH Voltage Vdd = Min., IoH = –4.0 mA 2.4 — V
VoL Output LOW Voltage Vdd = Min., IoL = 8.0mA — 0.4 V
VIH Input HIGH Voltage 2 Vdd + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND ≤ VIn ≤ Vdd
–1 1 µA
ILo Output Leakage
GND ≤ Vout ≤ Vdd, Outputs Disabled –1 1 µA
Note:
1.
VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 20 ns). Not 100% tested.
VIH (max.) = Vdd + 0.3V dc; VIH (max.) = Vdd + 2.0V Ac (pulse width < 20 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 1.65V-2.2V
Symbol Parameter Test Conditions VDD Min. Max. Unit
VoH Output HIGH Voltage IoH = -0.1 mA 1.65-2.2V 1.4 — V
VoL Output LOW Voltage IoL = 0.1 mA 1.65-2.2V — 0.2 V
VIH Input HIGH Voltage 1.65-2.2V 1.4 Vdd + 0.2 V
VIL
(1)
Input LOW Voltage
1.65-2.2V –0.2 0.4 V
ILI Input Leakage GND ≤ VIn ≤ Vdd
–1 1 µA
ILo Output Leakage
GND ≤ Vout ≤ Vdd, Outputs Disabled –1 1 µA
Note:
1.
VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 20 ns). Not 100% tested.
VIH (max.) = Vdd + 0.3V dc; VIH (max.) = Vdd + 2.0V Ac (pulse width < 20 ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com 5
Rev. H1
02/10/2017
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
AC TEST LOADS
Figure 1.
319 Ω
5 pF
Including
jig and
scope
353 Ω
OUTPUT
3.3V
Figure 2.
AC TEST CONDITIONS
Parameter Unit Unit Unit
(2.4V-3.6V) (3.3V + 10%) (1.65V-2.2V)
InputPulseLevel 0Vto3V 0Vto3V 0Vto1.8V
InputRiseandFallTimes 1V/ns 1V/ns 1V/ns
InputandOutputTiming 1.5V 1.5V 0.9V
and Reference Level (VRef)
OutputLoad SeeFigures1and2 SeeFigures1and2 SeeFigures1and2
6 Integrated Silicon Solution, Inc. — www.issi.com
Rev. H1
02/10/2017
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
Vterm TerminalVoltagewithRespecttoGND –0.5toVdd + 0.5 V
Vdd VddRelatestoGND –0.3to4.0 V
tstg StorageTemperature –65to+150 °C
Pt Power Dissipation 1.0 W
Notes:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamageto
thedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
cIn Input Capacitance VIn = 0V 6 pF
c
I/o
Input/Output Capacitance Vout = 0V 8 pF
Notes:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
2. Testconditions:T
A = 25°c, f = 1 MHz, Vdd=3.3V.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

IS61WV25616BLL-10KLI

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Buy IS61WV25616BLL-10KLI
Manufacturer:
ISSI
Description:
SRAM 4Mb, 2.4v-3.6v, 10ns 256K x 16 Async SRAM
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New from this manufacturer.
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