OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IS61WV25616BLL-10KLI

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
Integrated Silicon Solution, Inc. — www.issi.com 7
Rev. H1
02/10/2017
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
OPERATING RANGE (VDD) (IS61WV25616BLL)
(1)
Range Ambient Temperature VDD (8 nS)
1
VDD (10 nS)
1
Commercial 0°Cto+70°C 3.3V+5% 2.4V-3.6V
Industrial –40°Cto+85°C 3.3V+5% 2.4V-3.6V
Note:
1.Whenoperatedintherangeof2.4V-3.6V,thedevicemeets10ns.Whenoperatedintherange
of3.3V+5%,thedevicemeets8ns.
OPERATING RANGE (VDD) (IS64WV25616BLL)
Range Ambient Temperature VDD (10 nS)
Automotive –40°Cto+125°C 2.4V-3.6V
HIGH SPEED (IS61WV25616ALL/BLL)
OPERATING RANGE (VDD) (IS61WV25616ALL)
Range Ambient Temperature VDD Speed
Commercial 0°Cto+70°C 1.65V-2.2V 20ns
Industrial –40°Cto+85°C 1.65V-2.2V 20ns
Automotive –40°Cto+125°C 1.65V-2.2V 20ns
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 -10 -20
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
Icc Vdd Dynamic Operating Vdd = Max., Com. — 50 — 40 — 35 mA
Supply Current Iout = 0 mA, f = fmAX Ind. — 55 — 45 — 40
Auto. — — — 65 — 60
typ.
(2)
25
Icc1 Operating Vdd = Max., Com. — 35 — 35 — 30 mA
Supply Current Iout = 0 mA, f = 0 Ind. — 40 — 40 — 40
Auto. — — — 60 — 60
Isb1 TTLStandbyCurrent Vdd = Max., Com. — 10 — 10 — 10 mA
(TTLInputs) VIn = VIH or VIL Ind. — 15 — 15 — 15
CE ≥ VIH,f=0 Auto. — — — 30 — 30
Isb2 CMOS Standby Vdd = Max., Com. — 8 — 8 — 8 mA
Current (CMOS Inputs) CE ≥ Vdd – 0.2V, Ind. — 9 — 9 — 9
VIn ≥ Vdd – 0.2V, or Auto. — — — 20 — 20
VIn ≤ 0.2V
, f = 0 typ.
(2)
2
Note:
1. At f = f
mAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.TypicalvaluesaremeasuredatV
dd=3.0V,TA = 25
o
C and not 100% tested.
8 Integrated Silicon Solution, Inc. — www.issi.com
Rev. H1
02/10/2017
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-25 -35 -45
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
Icc Vdd Dynamic Operating Vdd = Max., Com. — 20 — 20 — 15 mA
Supply Current Iout = 0 mA, f = fmAX Ind. — 25 — 25 — 20
Auto. — 50 — 50 — 40
typ.
(2)
11
Icc1 Operating Vdd = Max., Com. — 10 — 10 — 10 mA
Supply Current Iout = 0 mA, f = 0 Ind. — 12 — 12 — 12
Auto. — 20 — 20 — 20
Isb1 TTLStandbyCurrent Vdd = Max., Com. — 5 — 5 — 5 mA
(TTLInputs) VIn = VIH or VIL Ind. — 7 — 7 — 7
CE ≥ VIH, f = 0 Auto. — 10 — 10 — 10
Isb2 CMOS Standby Vdd = Max., Com. — 1 — 1 — 1 mA
Current (CMOS Inputs) CE ≥ Vdd – 0.2V, Ind. — 2 — 2 — 2
VIn ≥ Vdd – 0.2V, or Auto. — 10 — 10 — 10
VIn ≤ 0.2V
, f = 0 typ.
(2)
0.2
Note:
1. At f = f
mAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.TypicalvaluesaremeasuredatV
dd=3.0V,TA = 25
o
C and not 100% tested.
OPERATING RANGE (VDD) (IS61WV25616BLS)
Range Ambient Temperature VDD (25 nS)
Commercial 0°Cto+70°C 2.4V-3.6V
Industrial –40°Cto+85°C 2.4V-3.6V
LOW POWER (IS61WV25616ALS/BLS)
OPERATING RANGE (VDD) (IS61WV25616ALS)
Range Ambient Temperature VDD Speed
Commercial 0°Cto+70°C 1.65V-2.2V 45ns
Industrial –40°Cto+85°C 1.65V-2.2V 45ns
Automotive –40°Cto+125°C 1.65V-2.2V 45ns
OPERATING RANGE (VDD) (IS64WV25616BLS)
Range Ambient Temperature VDD (35 nS)
Automotive –40°Cto+125°C 2.4V-3.6V
Integrated Silicon Solution, Inc. — www.issi.com 9
Rev. H1
02/10/2017
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-8 -10
Symbol Parameter Min. Max. Min. Max. Unit
trc ReadCycleTime 8 — 10 — ns
tAA AddressAccessTime — 8 — 10 ns
toHA OutputHoldTime 2.0 — 2.0 — ns
tAce CEAccessTime — 8 — 10 ns
tdoe OEAccessTime — 4.5 — 4.5 ns
tHzoe
(2)
OEtoHigh-ZOutput — 3 — 4 ns
tLzoe
(2)
OE to Low-Z Output 0 — 0 — ns
tHzce
(2
CEtoHigh-ZOutput 0 3 0 4 ns
tLzce
(2)
CEtoLow-ZOutput 3 — 3 — ns
tbA LB, UBAccessTime — 5.5 — 6.5 ns
tHzb
(2)
LB, UBtoHigh-ZOutput 0 3 0 3 ns
tLzb
(2)
LB, UB to Low-Z Output 0 — 0 — ns
tPu PowerUpTime 0 — 0 — ns
tPd PowerDownTime — 8 — 10 ns
Notes:
1. Testconditionsassumesignaltransitiontimesof3nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0Vto3.0V
andoutputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

IS61WV25616BLL-10KLI

Mfr. #:
Buy IS61WV25616BLL-10KLI
Manufacturer:
ISSI
Description:
SRAM 4Mb, 2.4v-3.6v, 10ns 256K x 16 Async SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet