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SI4312-B10-GMR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
Si4312
4 Rev. 0.5
1. Electrical Specifications
Table 1. Recommended Operating Conditions*
Parameter Symbol Test Condition Min Typ Max Unit
Supply Voltage V
DD
2.7 3.3 3.6 V
Supply Voltage Powerup Rise Time V
DD-RISE
10 — — μs
Ambient Temperature T
A
–40 25 85 °C
*Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at V
DD
= 3.3 V and 25 C unless otherwise stated. Parameters are tested in production unless
otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
Parameter Symbol Value Unit
Supply Voltage V
DD
–0.5 to 3.9 V
Input Current
3
I
IN
10 mA
Input Voltage
3
V
IN
–0.3 to (V
DD
+ 0.3) V
Operating Temperature T
OP
–45 to 95 C
Storage Temperature T
STG
–55 to 150 C
RF Input Level
4
0.4 V
PK
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended
operating conditions for extended periods may affect device reliability.
2. The Si4312 device is a high-performance RF integrated circuit with certain pins having an ESD rating of < 2 kV HBM.
Handling and assembly of this device should only be done at ESD-protected workstations.
3. For input pins 315/434
, RATIO, BT[1:0], TH[1:0].
4. At RF input pin RX_IN.
Si4312
Rev. 0.5 5
Figure 1. Reset Timing
Table 3. DC Characteristics
(T
A
= 25 °C, V
DD
= 3.3 V, R
s
= 50 Ω, F
RF
= 433.92 MHz unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Supply Current
I
VDD
— 20 TBD mA
Reset Supply Current
I
RST
Reset asserted — 2 TBD µA
High Level Input Voltage
1
V
IH
0.7 x V
DD
—V
DD
+0.3 V
Low Level Input Voltage
1
V
IL
–0.3 — 0.3 x V
DD
V
High Level Input Current
1
I
IH
V
IN
=V
DD
=3.6V –10 — 10 µA
Low Level Input Current
1
I
IL
V
IN
=0V, V
DD
=3.6V –10 — 10 µA
High Level Output Voltage
2
V
OH
I
OUT
= 500 µA 0.8 x V
DD
——V
Low Level Output Voltage
2
V
OL
I
OUT
= –500 µA — — 0.2 x V
DD
V
Notes:
1. For input pins OOK, 315/434, RATIO, BT[1:0], TH[1:0].
2. For output pin DOUT.
Table 4. Reset Timing Characteristics
(V
DD
=3.3V, T
A
=25°C)
Parameter Symbol Min Typ Max Unit
RST
Pulse Width t
SRST
100 — — µs
70%
30%
t
SRST
RST
Si4312
6 Rev. 0.5
Table 5. Si4312 Receiver Characteristics
(T
A
= 25 °C, V
DD
= 3.3 V, R
s
= 50 Ω, F
RF
= 433.92 MHz unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Sensitivity @ BER = 10
–3 (Note 1)
1.0 kbps, 315 MHz
(Note2)
— –110 — dBm
10 kbps, 315 MHz
(Note2)
— –103 — dBm
1.0 kbps, 433.92 MHz
(Note2)
— –106 — dBm
10 kbps, 433.92 MHz TBD –101 — dBm
Data Rate
3
NRZ — — 10 kbps
Adjacent Channel Rejection
±200 kHz
(Note 1)
Desired signal is 3 dB above sensitivity
(BER = 10
–3
), unmodulated interferer
is at ±200 kHz, rejection measured as
difference between desired signal and
interferer level in dB when BER = 10
–3
TBD 35 — dB
Alternate Channel Rejection
±400 kHz
1,2
Desired signal is 3 dB above sensitivity
(BER = 10
–3
), unmodulated interferer
is at ±400 kHz, rejection measured as
difference between desired signal and
interferer level in dB when BER = 10
–3
— 55 — dB
Image Rejection, IF = 128 kHz
1,2
— 23 — dB
Blocking
1,2
±2 MHz, 1.0 kbps, desired signal is
3 dB above sensitivity, CW interferer
level is increased until BER = 10
–3
— 65 — dB
±10 MHz, 1.0 kbps, desired signal is
3 dB above sensitivity, CW interferer
level is increased until BER = 10
–3
— 70 — dB
Maximum RF Input Power
1,2
— 8 — dBm
Input IP3
3
| f
2
–f
1
| = 5 MHz, high gain mode,
desired signal is 3 dB above sensitivity,
CW interference levels are increased
until BER = 10
–3
—–10—dBm
LNA Input Capacitance
3
—7—pF
Receiver Channel Bandwidth
4
—160—kHz
RX Boot Time
3
From reset — 500 — ms
Notes:
1. 1.0 kbps, Manchester encoded, RATIO = 0, TH[1:0] = 00, xtal = ±20 ppm.
2. Guaranteed by characterization.
3. Guaranteed by design.
4. The frequency scanning (see section “3.6. Frequency Scanning”) extends this to 420 kHz.
Table 6. Crystal Characteristics
(V
DD
= 3.3 V, T
A
=25°C)
Parameter
Symbol Test Condition Min Typ Max Unit
Crystal Oscillator Frequency — 16 — MHz
Crystal ESR — — 100
XTL1, XTL2 Input Capacitance — 11 — pF
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

SI4312-B10-GMR

Mfr. #:
Buy SI4312-B10-GMR
Manufacturer:
Silicon Labs
Description:
RF Receiver Sub-GHz receiver
Lifecycle:
New from this manufacturer.
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