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P89LPC9401FBD,551

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P45P46-P48P49-P51P52-P54P55-P57P58-P59
P89LPC9401_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet Rev. 01 — 5 September 2005 43 of 59
Philips Semiconductors
P89LPC9401
8-bit two-clock 80C51 microcontroller with 32 segment × 4 LCD driver
8. Limiting values
[1] The following applies to Table 10:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to V
SS
unless
otherwise noted.
Table 10: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol Parameter Conditions Min Max Unit
T
amb(bias)
bias ambient temperature −55 +125 °C
T
stg
storage temperature −65 +150 °C
I
OH(I/O)
HIGH-state output current per I/O pin - 20 mA
I
OL(I/O)
LOW-state output current per I/O pin - 20 mA
I
I/O(tot)(max)
maximum total I/O current - 100 mA
V
n
voltage on any other pin (except V
SS
) with respect to V
DD
- 3.5 V
P
tot(pack)
package total power dissipation based on package heat
transfer, not device power
consumption
- 1.5 W
P89LPC9401_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet Rev. 01 — 5 September 2005 44 of 59
Philips Semiconductors
P89LPC9401
8-bit two-clock 80C51 microcontroller with 32 segment × 4 LCD driver
9. Static characteristics
Table 11: Static electrical characteristics
V
DD
= 2.4 V to 3.6 V unless otherwise specified.
T
amb
=
−
40
°
C to +85
°
C for industrial applications, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
I
DD(oper)
operating supply current V
DD
= 3.6 V; f
osc
=12MHz
[2]
-1115mA
V
DD
= 3.6 V; f
osc
=18MHz
[2]
-1723mA
I
DD(idle)
Idle mode supply current V
DD
= 3.6 V; f
osc
=12MHz
[2]
- 3.7 5 mA
V
DD
= 3.6 V; f
osc
=18MHz
[2]
-68mA
I
DD(pd)
Power-down mode supply
current
V
DD
= 3.6 V; voltage
comparators powered
down
[2]
-6085µA
I
DD(tpd)
total Power-down mode supply
current
V
DD
= 3.6 V
[3]
-925µA
(dV/dt)
r
rise rate of V
DD
- - 2 mV/µs
(dV/dt)
f
fall rate of V
DD
- - 50 mV/µs
V
DDR
data retention voltage 1.5 - - V
V
th(HL)
HIGH-LOW threshold voltage except SCL, SDA 0.22V
DD
0.4V
DD
-V
V
IL
LOW-state input voltage SCL, SDA only −0.5 - 0.3V
DD
V
V
th(LH)
LOW-HIGH threshold voltage except SCL, SDA - 0.6V
DD
0.7V
DD
V
V
IH
HIGH-state input voltage SCL, SDA only 0.7V
DD
- 5.5 V
V
hys
hysteresis voltage port 1 - 0.2V
DD
-V
V
OL
LOW-state output voltage I
OL
=20mA;
V
DD
= 2.4 V to 3.6 V,
all ports, all modes except
high-Z
[4]
- 0.6 1.0 V
I
OL
= 3.2 mA; V
DD
= 2.4 V
to 3.6 V; all ports; all
modes except high-Z
[4]
- 0.2 0.3 V
V
OH
HIGH-state output voltage I
OH
= −20 µA;
V
DD
= 2.4 V to 3.6 V;
all ports;
quasi-bidirectional mode
V
DD
− 0.3 V
DD
− 0.2 - V
I
OH
= −3.2 mA;
V
DD
= 2.4 V to 3.6 V;
all ports; push-pull mode
V
DD
− 0.7 V
DD
− 0.4 - V
V
xtal
crystal voltage with respect to V
SS
−0.5 - +4.0 V
V
n
voltage on any other pin
(except XTAL1, XTAL2, V
DD
)
with respect to V
SS
−0.5 - +5.5 V
C
iss
input capacitance
[5]
- - 15 pF
I
IL
LOW-state input current V
I
= 0.4 V
[6]
--−80 µA
I
LI
input leakage current V
I
=V
IL
,V
IH
or V
th(HL)
[7]
--±10 µA
I
THL
HIGH-LOW transition current
(all ports)
V
I
= 1.5 V at V
DD
= 3.6 V
[8]
−30 - −450 µA
R
RST_N(int)
internal pull-up resistance on
pin RST_N
pin RST 10 - 30 kΩ
P89LPC9401_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet Rev. 01 — 5 September 2005 45 of 59
Philips Semiconductors
P89LPC9401
8-bit two-clock 80C51 microcontroller with 32 segment × 4 LCD driver
[1] Typical ratings are not guaranteed. The values listed are at room temperature, V
DD
= 3 V.
[2] The I
DD(oper)
,I
DD(idle)
, and I
DD(pd)
specifications are measured using an external clock with the following functions disabled: comparators,
real-time clock, and watchdog timer.
[3] The I
DD(tpd)
specification is measured using an external clock with the following functions disabled: comparators, real-time clock,
brownout detect, and watchdog timer.
[4] See Section 8 “Limiting values” on page 43 for steady state (non-transient) limits on I
OL
or I
OH
. If I
OL
/I
OH
exceeds the test condition,
V
OL
/V
OH
may exceed the related specification.
[5] Pin capacitance is characterized but not tested.
[6] Measured with port in quasi-bidirectional mode.
[7] Measured with port in high-impedance mode.
[8] Port pins source a transition current when used in quasi-bidirectional mode and externally driven from logic 1 to logic 0. This current is
highest when V
I
is approximately 2 V.
V
bo
brownout trip voltage 2.4 V < V
DD
< 3.6 V; with
BOV = 1, BOPD = 0
2.40 - 2.70 V
V
ref(bg)
band gap reference voltage 1.11 1.23 1.34 V
TC
bg
band gap temperature
coefficient
- 10 20 ppm/°
C
Table 11: Static electrical characteristics
…continued
V
DD
= 2.4 V to 3.6 V unless otherwise specified.
T
amb
=
−
40
°
C to +85
°
C for industrial applications, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P45P46-P48P49-P51P52-P54P55-P57P58-P59

P89LPC9401FBD,551

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Manufacturer:
NXP Semiconductors
Description:
IC MCU 8BIT 8KB FLASH 64LQFP
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