NB3H60113G
www.onsemi.com
7
Table 5. ATTRIBUTES
Characteristic Value
ESD Protection Human Body Model 2 kV
Internal Input Default State Pull up/ down Resistor
50 kW
Moisture Sensitivity, Indefinite Time Out of Dry Pack (Note 1) MSL1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Transistor Count 130 k
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 6. ABSOLUTE MAXIMUM RATING (Note 2)
Symbol Parameter Rating Unit
VDD Positive power supply with respect to Ground −0.5 to +4.6 V
V
I
Input Voltage with respect to chip ground −0.5 to VDD + 0.5 V
T
A
Operating Ambient Temperature Range (Industrial Grade) −40 to +85 °C
T
STG
Storage temperature −65 to +150 °C
T
SOL
Max. Soldering Temperature (10 sec) 265 °C
q
JA
Thermal Resistance (Junction−to−ambient) 0 lfpm
(Note 3) 500 lfpm
129
84
°C/W
°C/W
q
JC
Thermal Resistance (Junction−to−case) 35 to 40 °C/W
T
J
Junction temperature 125 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power). ESD51.7 type board. Back side Copper heat spreader area 100 sq mm, 2 oz
(0.070 mm) copper thickness.
Table 7. RECOMMENDED OPERATION CONDITIONS
Symbol Parameter Condition Min Typ Max Unit
V
DD
Core Power Supply Voltage 3.3 V operation
2.5 V operation
2.97
2.25
3.3
2.5
3.63
2.75
V
CL Clock output load capacitance for
LVCMOS/ LVTTL clock
f
out
< 100 MHz
f
out
100 MHz
15
5
pF
pF
fclkin Crystal Input Frequency
Reference Clock Frequency
Fundamental Crystal
Single ended clock Input
3
3
50
200
MHz
C
X
XIN / XOUT pin stray Capacitance Note 4 4.5 pF
C
XL
Crystal Load Capacitance 10 pF
ESR Crystal ESR 150
W
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
4. The XIN / XOUT pin stray capacitance needs to be subtracted from crystal load capacitance (along with PCB and trace capacitance) while
selecting appropriate load for the crystal in order to get minimum ppm error.
NB3H60113G
www.onsemi.com
8
Table 8. DC ELECTRICAL CHARACTERISTICS (V
DD
= 3.3 V ± 10%, 2.5 V ± 10%; GND = 0 V, T
A
= −40°C to 85°C, Notes 5, 17)
Symbol
Parameter Condition Min Typ Max Unit
I
DD_3.3
V
Power Supply current for core Configuration Dependent.
V
DD
= 3.3 V, T
A
= 25°C,
XIN/CLKIN = 25 MHz
(XTAL), CLK[0:2] = 100 MHz, 16 mA
output drive
13 mA
I
DD_2.5
V
Power Supply current for core Configuration Dependent.
V
DD
= 2.5 V, T
A
= 25°C,
XIN/CLKIN = 25 MHz
(XTAL), CLK[0:2] = 100 MHz, 12 mA
output drive
13 mA
I
PD
Power Down Supply Current PD# is Low to make all outputs OFF 20
mA
V
IH
Input HIGH Voltage
Pin XIN 0.65 V
DD
V
DD
V
Pin PD# 0.85 V
DD
V
DD
V
IL
Input LOW Voltage
Pin XIN 0 0.35 V
DD
V
Pin PD# 0 0.15 V
DD
Zo Nominal Output Impedance Configuration Dependent. 12 mA
drive
22
W
R
PUP/PD
Internal Pull up/ Pull down resistor
V
DD
= 3.3 V 50
kW
V
DD
= 2.5 V 80
Cprog
Programmable Internal Crystal Load
Capacitance
Configuration Dependent 4.36 20.39 pF
Programmable Internal Crystal Load
Capacitance Resolution
0.05 pF
Cin Input Capacitance Pin PD# 4 6 pF
LVCMOS / LVTTL OUTPUTS
V
OH
Output HIGH Voltage
V
DD
= 3.3 V I
OH
= 16 mA
I
OH
= 12 mA
I
OH
= 8 mA
I
OH
= 4 mA
V
DD
= 2.5 V I
OH
= 12 mA
I
OH
= 8 mA
I
OH
= 4 mA
I
OH
= 2 mA
0.75*V
DD
V
V
OL
Output LOW Voltage
V
DD
= 3.3 V I
OL
= 16 mA
I
OL
= 12 mA
I
OL
= 8 mA
I
OL
= 4 mA
V
DD
= 2.5 V I
OL
= 12 mA
I
OL
= 8 mA
I
OL
= 4 mA
I
OL
= 2 mA
0.25*V
DD
V
I
DD_LVCMOS
LVCMOS Output Supply Current Configuration Dependent. T
A
= 25°C,
CLK[0:2] = fout in PLL bypass mode
Measured on V
DD
= 3.3 V
f
out
= 33.33 MHz, C
L
= 5 pF
f
out
= 100 MHz, C
L
= 5 pF
f
out
= 200 MHz, C
L
= 5 pF
Measured on V
DD
= 2.5 V
f
out
= 33.33 MHz, C
L
= 5 pF
f
out
= 100 MHz, C
L
= 5 pF
f
out
= 200 MHz, C
L
= 5 pF
3
6.5
12
2.2
5
9.5
mA
NB3H60113G
www.onsemi.com
9
Table 8. DC ELECTRICAL CHARACTERISTICS (V
DD
= 3.3 V ± 10%, 2.5 V ± 10%; GND = 0 V, T
A
= −40°C to 85°C, Notes 5, 17)
Symbol UnitMaxTypMinConditionParameter
HCSL OUTPUTS (Note 6)
V
OH_HCSL
Output HIGH Voltage (Note 7) V
DD
= 3.3 V, 2.5 V 700 mV
V
OL_HCSL
Output Low Voltage (Note 7) V
DD
= 3.3 V, 2.5 V 0 mV
V
CROSS
Crossing Point Voltage (Notes 8 and 9) V
DD
= 3.3 V, 2.5 V 250 350 450 mV
Delta Vcross
Change in Magnitude of Vcross for HCSL Output V
DD
= 3.3 V, 2.5 V
(Notes 8 and 10)
150 mV
I
DD_HCSL
Measured on V
DD
= 2.5 V & 3.3 V with f
out
= 100 MHz, C
L
= 2 pF
f
out
= 200 MHz, C
L
= 2 pF
22 mA
LVDS OUTPUTS (Notes 8 and 11)
V
OD_LVDS
Differential Output Voltage 250 450 mV
DeltaV
OD_LVDS
Change in Magnitude of VOD for Complementary Output States 0 25 mV
V
OS_LVDS
Offset Voltage 1200 mV
Delta V
OS_LVDS
Change in Magnitude of VOS for Complementary Output States 0 25 mV
V
OH_LVDS
Output HIGH Voltage (Note 12)
V
DD
= 2.5 V
V
DD
= 3.3 V
1425 1600 mV
V
OL_LVDS
Output LOW Voltage (Note 13)
V
DD
= 2.5 V
V
DD
= 3.3 V
900 1075 mV
I
DD_LVDS
f
out
= 100 MHz
f
out
= 200 MHz
14 mA
LVPECL OUTPUTS (Notes 14 and 15)
V
OH_LVPECL
Output HIGH Voltage
V
DD
= 2.5 V
V
DD
= 3.3 V
V
DD
−1450 V
DD
−900
1600
2400
V
DD
−825 mV
V
OL_LVPECL
Output LOW Voltage
V
DD
= 2.5 V
V
DD
= 3.3 V
V
DD
−2000 V
DD
−1700
800
1600
V
DD
−1500 mV
V
SWING
Peak−to−Peak output voltage swing 550 800 930 mV
Vcross Crossover point voltage (Note 15)
V
DD
= 2.5 V
V
DD
= 3.3 V
270 380
I
DD_LVPECL
f
out
= 100 MHz
f
out
= 200 MHz
25 mA
CML OUTPUTS (Notes 15 and 16)
V
OH_CML
Output HIGH Voltage
V
DD
= 3.3 V
V
DD
= 2.5 V
V
DD
−60
3240
2440
V
DD
−10
3290
2490
V
DD
3300
2500
mV
V
OL_CML
Output LOW Voltage
V
DD
= 3.3 V
V
DD
= 2.5 V
V
DD
−1100
2200
1400
V
DD
−800
2500
1700
V
DD
− 640
2660
1860
mV
V
OD_CML
Differential Output Voltage Magnitude
V
DD
= 3.3 V
V
DD
= 2.5 V
640 780 1000 mV
Vcross Crossover point voltage (Note 15)
V
DD
= 3.3 V
V
DD
= 2.5 V
V
DD
−395
I
DD_CML
f
out
= 100 MHz
f
out
= 200 MHz
5.0 mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.

NB3H60113G00MTR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Clock Generators & Support Products 3.3 V/2.5 V OmniCloc LVCMOS/LVTTL LVPECL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet