RT8121
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DS8121-02 May 2011www.richtek.com
Parameter Symbol Test Conditions Min Typ Max Unit
VCC12 Supply Input
VCC12 Supply Voltage V
VCC12
No Switching 10.8 12 13.2 V
VCC12 Supply Current I
VCC12
-- 6 -- mA
VCC5 Power
VCC5 Supply Voltage V
VCC5
I
LOAD
= 10m A 4.9 5 5.1 V
VCC5 Output Sourcing I
VCC5
10 -- -- mA
Power On Reset
VCC12 Rising Threshold V
VCC12_th
9.2 9.6 10 V
VCC12 Hysteresis V
VCC12_hys
-- 0.9 -- V
VCC5 Rising Threshold V
VCC5_ th
4.4 4.6 4.8 V
VCC5 Hysteresis V
VCC5_ hys
-- 0.4 -- V
(T
A
= 25°C, unless otherwise specified)
Electrical Characteristics
Recommended Operating Conditions
(Note 4)
z Power Input Voltage, V
IN
--------------------------------------------------------------------------------- 4.5V to 13.2V
z Junction Temperature Range ---------------------------------------------------------------------------- 40°C to 125°C
z Ambient Temperature Range ---------------------------------------------------------------------------- 40°C to 85°C
Absolute Maximum Ratings (Note 1)
z Supply Input Voltage -------------------------------------------------------------------------------------- 0.3V to 15V
z BOOT to PHASE ------------------------------------------------------------------------------------------ 1.7V to 15V
z PHASE to GND
DC ------------------------------------------------------------------------------------------------------------- 2V to 15V
<20ns -------------------------------------------------------------------------------------------------------- 5V to 30V
z UGATE to PHASE
DC ------------------------------------------------------------------------------------------------------------- 0.3V to 15.3V
<20ns -------------------------------------------------------------------------------------------------------- 5V to 18V
z LGATE to GND
DC ------------------------------------------------------------------------------------------------------------- (GND 0.3V) to (V
CC
+ 0.3V)
<20ns -------------------------------------------------------------------------------------------------------- (GND 5V) to (V
CC
+ 5V)
z Input/Output Voltage -------------------------------------------------------------------------------------- 0.3V to 6.5V
z Power Dissipation, P
D
@ T
A
= 25°C
WQFN-20L 3x3 -------------------------------------------------------------------------------------------- 1.471W
z Package Thermal Resistance (Note 2)
WQFN-20L 3x3, θ
JA
--------------------------------------------------------------------------------------- 68°C/W
WQFN-20L 3x3, θ
JC
-------------------------------------------------------------------------------------- 7.5°C/W
z Lead Temperature (Soldering, 10 sec.) --------------------------------------------------------------- 260°C
z Junction Temperature ------------------------------------------------------------------------------------- 150°C
z Storage Temperature Range ---------------------------------------------------------------------------- 65°C to 150°C
z ESD Susceptibility (Note 3)
HBM (Human Body Mode) ------------------------------------------------------------------------------ 2kV
MM (Machine Mode) -------------------------------------------------------------------------------------- 200V
To be continued
To be continued
RT8121
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DS8121-02 May 2011 www.richtek.com
To be continued
Parameter Symbol Test Conditions Min Typ Max Unit
RT/EN
Chip Disable Threshold V
DIS
-- -- 0.4 V
Running Frequency f
OSC
R
RT
= 60kΩ 180 200 220 kHz
RT Pin Voltage V
RT, GND
R
RT
= 60kΩ, when RT
connected to GND by a register
1.52 1.6 1.68 V
RT Pin Voltage V
RT, VDD
R
RT
= 60kΩ, when RT
connected to V
CC5
by a register
V
VCC5
1.68
V
VCC 5
1.6
V
VCC5
1.52
V
Modulation Gain A
RAMP
R
RT
= 60kΩ
-- 22 -- %/V
Reference Voltage Accuracy
DAC Accuracy 0.5 -- 0.5 %
VID Input Low Voltage VID -- -- 0.4 V
VID Input High Voltage VID 0.8 -- -- V
Error Amplifier
DC Gain A
DC
No Load -- 80 -- dB
Gain-Bandwidth GBW C
LOAD
= 10pF -- 10 -- MHz
Slew Rate SR C
LOAD
= 10pF 10 -- -- V/μs
Output Voltage Range V
COMP
0.5 -- 3.6 V
Maximum Current I
EA_SLEW
Slew 300 -- -- μA
Power Sequence
PGOOD Low Voltage V
PGOOD
I
PGOOD
= 4mA -- -- 0.4 V
Soft-Start Delay TD1 0 -- 5 ms
PGOOD Delay TD3 0.05 -- 4 ms
Current Sense Amplifier
Maximum Current I
GMMAX
V
CSP
= 1.3V, sink current from
CSN
100 -- -- μA
Input Offset Voltage V
OSCS
1.5 0 1.5 mV
Soft-Start
Soft-Start Current I
SS1
Slew 12 16 20 μA
VID Change Current I
SS2
Slew 120 160 200 μA
Gate Driver
UGATE Drive Source I
UGATEsr
V
BOOT
– V
PHASE
= 12V,
V
UGATE
V
PHASE
= 6V
0.6 1 -- A
UGATE Drive Sink R
UGATEsk
V
BOOT
– V
PHASE
= 12V,
V
UGATE
V
PHASE
= 1V
-- 1 -- Ω
LGATE Drive Source I
LGATEsr
V
VCC12
= 12V, V
LGATE
= 6V 0.6 1 -- A
LGATE Drive Sink R
LGATEsk
V
VCC12
= 12V, V
LGATE
= 1V -- 0.8 -- Ω
Protection
Over Voltage Threshold V
OVP
Sweep FB Voltage, V
FB
V
EAP
125 150 175 mV
OCP Input Offset Voltage V
OCOFS
10 -- 10 mV
Thermal Shutdown -- 160 -- °C
RT8121
6
DS8121-02 May 2011www.richtek.com
Note 1. Stresses listed as the above "Absolute Maximum Ratings" may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θ
JA
is measured in natural convection at T
A
= 25°C on a high effective thermal conductivity four-layer test board of
JEDEC 51-7 thermal measurement standard. The measurement case position of θ
JC
is on the exposed pad of the
package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Parameter Symbol Conditions Min Typ Max Unit
Dynamic Characteristic
UGATE Rise Time t
rUGATE
C
ISS
= 3000pF
- 15 - n s
UGATE Fall Tim e t
fUGATE
- 10 - n s
LGATE Rise Time t
rLGATE
- 15 - n s
LGATE Rise Time t
fLGATE
- 10 - n s

RT8121GQW

Mfr. #:
Manufacturer:
Description:
IC REG CTRLR VID 1OUT 20WQFN
Lifecycle:
New from this manufacturer.
Delivery:
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