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A3T18H455W23SR6

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
10
RF Device Data
NXP Semiconductors
A3T18H455W23SR6
P1dB – TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
IMAGINARY ()
3
451
0
2
REAL ()
–1
–2
–3
–4
–5
–6
6
0
IMAGINARY ()
3
451
0
2
REAL ()
–1
–2
–3
–4
–5
–6
6
0
IMAGINARY ()
3
451
0
2
REAL ()
–1
–2
–3
–4
–5
–6
6
0
IMAGINARY ()
3
451
0
2
REAL ()
–1
–2
–3
–4
–5
–6
6
0
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 9. P1dB Load Pull Output Power Contours (dBm)
Figure 10. P1dB Load Pull Efficiency Contours (%)
54
56
Figure 11. P1dB Load Pull Gain Contours (dB)
Figure 12. P1dB Load Pull AM/PM Contours ()
49.5
49
48.5
51
50.5
50
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
62
64
60
66
58
20.5
19
19.5
18.5
–18
–14
–12
–20
–24
–16
21
20
–22
51.5
52.5
–8
P
E
E
P
E
P
E
P
52
68
21.5
22
22.5
–10
A3T18H455W23SR6
11
RF Device Data
NXP Semiconductors
P3dB – TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
IMAGINARY ()
3
451
0
2
REAL ()
–1
–2
–3
–4
–5
–6
6
0
IMAGINARY ()
3
451
0
2
REAL ()
–1
–2
–3
–4
–5
–6
6
0
IMAGINARY ()
3
451
0
2
REAL ()
–1
–2
–3
–4
–5
–6
6
0
IMAGINARY ()
3
451
0
2
REAL ()
–1
–2
–3
–4
–5
–6
6
0
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 13. P3dB Load Pull Output Power Contours (dBm) Figure 14. P3dB Load Pull Efficiency Contours (%)
Figure 15. P3dB Load Pull Gain Contours (dB)
Figure 16. P3dB Load Pull AM/PM Contours ()
51
52.5
58
52
54
56
62
60
20.5
16.5
19
–28
–26
–24
–22
–20
–18
–14
–16
50.5
50
51.5
49.5
64
–30
19.5
P
E
P
E
P
E
P
E
53
52
66
68
17
17.5
18
18.5
20
12
RF Device Data
NXP Semiconductors
A3T18H455W23SR6
P1dB – TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
IMAGINARY ()
3
451
0
2
REAL ()
–2
–4
–8
6
0
–6
IMAGINARY ()
3
451
0
2
REAL ()
–2
–4
–8
6
0
–6
IMAGINARY ()
3
451
0
2
REAL ()
–2
–4
–8
6
0
–6
IMAGINARY ()
3
451
0
2
REAL ()
–2
–4
–8
6
0
–6
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 17. P1dB Load Pull Output Power Contours (dBm)
Figure 18. P1dB Load Pull Efficiency Contours (%)
54
56
Figure 19. P1dB Load Pull Gain Contours (dB)
Figure 20. P1dB Load Pull AM/PM Contours ()
54.5
53
53.5
55.5
54
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
62
64
60
66
58
13.5
12
12.5
–38
–28
–26
–24
–30
14
13
–32
54.5
68
14.5
15
15.5
P
E
55
52.5
52
E
P
52
E
P
E
P
–22
–34
–36
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

A3T18H455W23SR6

Mfr. #:
Buy A3T18H455W23SR6
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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