16
RF Device Data
NXP Semiconductors
A3T18H455W23SR6
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering B ulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www
.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HIST ORY
The following table summarizes revisions to this document.
Revision Date Description
0 Sept. 2017 Initial release of data sheet
A3T18H455W23SR6
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RF Device Data
NXP Semiconductors
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including without limitation consequential or incidental damages. “Typical” parameters
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E 2017 NXP B.V.
Document Number: A3T18H455W23S
Rev . 0, 09/2017

A3T18H455W23SR6

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V
Lifecycle:
New from this manufacturer.
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