OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

A3T18H455W23SR6

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
A3T18H455W23SR6
7
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 1805–1880 MHz
1
ACPR
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–10
–20
10
22
5
65
55
45
35
25
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
20
18
10 100 500
15
–60
ACPR (dBc)
16
14
12
0
–30
–40
–50
Figure 8. Broadband Frequency Response
10
22
f, FREQUENCY (MHz)
18
16
14
GAIN (dB)
20
12
1500 1600 1700 1800 1900 2000 2100 2300
Gain
G
ps
V
DD
= 29.5 Vdc
P
in
=0dBm
I
DQA
= 590 mA
V
GSB
=0.78Vdc
V
DD
= 29.5 Vdc, I
DQA
= 590 mA, V
GSB
=0.78Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal P AR = 9.9 dB @ 0.01% Probability on CCDF
2200
1805 MHz
1840 MHz
1880 MHz
1805 MHz
1840 MHz
1880 MHz
1805 MHz
1840 MHz
1880 MHz
D
8
RF Device Data
NXP Semiconductors
A3T18H455W23SR6
Table 8. Carrier Side Load Pull Performance — Maximum Power Tuning
V
DD
=30Vdc,I
DQA
= 802 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 2.78 – j6.99 3.15 + j6.74 1.03 – j3.92 18.4 52.8 192 54.7 –12
1840 3.95 – j7.53 4.44 + j7.31 1.05 – j4.05 18.6 52.7 187 57.1 –12
1880 6.46 – j8.41 6.76 + j7.47 1.01 – j4.36 18.5 52.6 182 54.7 –13
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 2.78 – j6.99 2.97 + j7.27 1.04 – j4.03 16.4 53.6 228 58.2 –18
1840 3.95 – j7.53 4.40 + j8.08 1.01 – j4.15 16.4 53.5 223 57.4 –18
1880 6.46 – j8.41 7.26 + j8.58 1.03 – j4.52 16.4 53.4 217 56.3 –18
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 9. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
V
DD
=30Vdc,I
DQA
= 802 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 2.78 – j6.99 2.99 + j6.99 2.52 – j2.95 21.4 50.9 122 69.6 –20
1840 3.95 – j7.53 4.25 + j7.71 2.34 – j2.92 21.6 50.6 114 69.0 –21
1880 6.46 – j8.41 6.74 + j8.03 2.02 – j3.22 21.3 50.9 122 68.1 –20
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 2.78 – j6.99 2.92 + j7.35 2.48 – j3.67 19.0 52.0 158 68.9 –23
1840 3.95 – j7.53 4.32 + j8.25 2.44 – j3.49 19.3 51.7 147 68.7 –25
1880 6.46 – j8.41 7.29 + j8.82 2.44 – j3.56 19.4 51.4 139 67.6 –25
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
A3T18H455W23SR6
9
RF Device Data
NXP Semiconductors
Table 10. Peaking Side Load Pull Performance — Maximum Power Tuning
V
DD
=30Vdc,V
GSB
= 0.6 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.13 – j5.65 1.35 + j5.67 2.16 – j5.38 14.4 56.0 398 59.2 –27
1840 1.99 – j5.64 1.70 + j5.77 2.22 – j5.63 14.4 56.0 395 58.0 –25
1880 2.81 – j6.54 2.44 + j6.35 2.52 – j6.09 14.5 56.0 400 58.4 –29
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.13 – j5.65 1.32 + j5.91 2.20 – j5.55 12.2 56.7 467 60.1 –35
1840 1.99 – j5.64 1.77 + j6.08 2.32 – j5.86 12.3 56.7 464 59.3 –32
1880 2.81 – j6.54 2.65 + j6.76 2.70 – j6.41 12.4 56.7 467 59.3 –35
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 11. Peaking Side Load Pull Performance — Maximum Efficiency Tuning
V
DD
=30Vdc,V
GSB
= 0.6 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.13 – j5.65 1.14 + j5.61 3.55 – j2.87 15.8 54.3 268 68.5 –31
1840 1.99 – j5.64 1.40 + j5.74 3.01 – j2.87 15.9 54.1 260 68.9 –31
1880 2.81 – j6.54 2.08 + j6.35 2.85 – j3.41 15.8 54.6 291 69.1 –33
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.13 – j5.65 1.19 + j5.88 3.67 – j3.85 13.5 55.6 360 66.8 –38
1840 1.99 – j5.64 1.59 + j6.08 3.38 – j3.86 13.7 55.6 363 67.5 –36
1880 2.81 – j6.54 2.39 + j6.78 3.32 – j4.00 13.7 55.6 367 67.9 –39
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

A3T18H455W23SR6

Mfr. #:
Buy A3T18H455W23SR6
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet