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A3T18H455W23SR6

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
A3T18H455W23SR6
13
RF Device Data
NXP Semiconductors
P3dB – TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
IMAGINARY ()
3
451
0
2
REAL ()
–2
–4
–8
6
0
–6
IMAGINARY ()
3
451
0
2
REAL ()
–2
–4
–8
6
0
–6
IMAGINARY ()
3
451
0
2
REAL ()
–2
–4
–8
6
0
–6
IMAGINARY ()
3
451
0
2
REAL ()
–2
–4
–8
6
0
–6
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 21. P3dB Load Pull Output Power Contours (dBm) Figure 22. P3dB Load Pull Efficiency Contours (%)
Figure 23. P3dB Load Pull Gain Contours (dB)
Figure 24. P3dB Load Pull AM/PM Contours ()
56
58
52
54
56
62
60
13.5
12
–40
–38
–36
–34
–32
–28
–30
55.5
55
56.5
54.5
64
–42
12.5
P
E
66
10
10.5
11
11.5
13
P
E
54
53.5
53
52.5
P
E
P
E
–28
14
RF Device Data
NXP Semiconductors
A3T18H455W23SR6
PACKAGE DIMENSIONS
A3T18H455W23SR6
15
RF Device Data
NXP Semiconductors
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

A3T18H455W23SR6

Mfr. #:
Buy A3T18H455W23SR6
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V
Lifecycle:
New from this manufacturer.
Delivery:
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