10 Integrated Silicon Solution, Inc. - www.issi.com
Rev. A
10/22/09
IS42SM83200D / IS42SM16160D / IS42SM32800D
IS42RM83200D / IS42RM16160D / IS42RM32800D
Burst Type
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit M3.
The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column
address, as shown in BURST DEFINITION table.
BURST DEFINITION
Burst Starting Column Order of Accesses Within a Burst
Length Address Type = Sequential Type = Interleaved
A0
2 0 0-1 0-1
1 1-0 1-0
A1 A0
0 0 0-1-2-3 0-1-2-3
4 0 1 1-2-3-0 1-0-3-2
1 0 2-3-0-1 2-3-0-1
1 1 3-0-1-2 3-2-1-0
A2 A1 A0
0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7
0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6
0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5
8 0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4
1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3
1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2
1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1
1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0
Full n = A0-A8 (x16, x32) Cn, Cn + 1, Cn + 2 Not Supported
Page n = A0-A9 (x8) Cn + 3, Cn + 4...
(y) (location 0-y) …Cn - 1,
Cn…
CAS Latency
The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the
first piece of output data. The latency can be set to two or three clocks.
If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock
edge n + m. The DQs will start driving as a result of the clock edge one cycle earlier (n + m - 1), and provided that
the relevant access times are met, the data will be valid by clock edge n + m. For example, assuming that the clock
cycle time is such that all relevant access times are met, if a READ command is registered at T0 and the latency
is programmed to two clocks, the DQs will start driving after T1 and the data will be valid by T2, as shown in CAS
Latency diagrams.
Reserved states should not be used as unknown operation or incompatibility with future versions may result.
Operating Mode
The normal operating mode is selected by setting M7 and M8 to zero; the other combinations of values for M7 and M8
are reserved for future use and/or test modes. The programmed burst length applies to both READ and WRITE bursts.
Integrated Silicon Solution, Inc. - www.issi.com 11
Rev. A
10/22/09
IS42SM83200D / IS42SM16160D / IS42SM32800D
IS42RM83200D / IS42RM16160D / IS42RM32800D
Test modes and reserved states should not be used because unknown operation or incompatibility with future
versions may result.
Write Burst Mode
When M9 = 0, the burst length programmed via M0-M2 applies to both READ and WRITE bursts; when M9 = 1, the
programmed burst length applies to READ bursts, but write accesses are single-location (nonburst) accesses.
DON'T CARE
UNDEFINED
CLK
COMMAND
DQ
READ NOP NOP NOP
CAS Latency - 3
t
AC
t
OH
D
OUT
T0 T1 T2 T3 T4
tLZ
CLK
COMMAND
DQ
READ NOP NOP
CAS Latency - 2
t
AC
t
OH
D
OUT
T0 T1 T2 T3
tLZ
CAS LATENCY
12 Integrated Silicon Solution, Inc. - www.issi.com
Rev. A
10/22/09
IS42SM83200D / IS42SM16160D / IS42SM32800D
IS42RM83200D / IS42RM16160D / IS42RM32800D
EXTENDED MODE REGISTER DEFINITION
The extended mode register is programmed via the MODE REGISTER SET command (BA1 = 1, BA0 = 0) and retains
the stored information until it is programmed again or the device loses power. The extended mode register must be
programmed with E7 through E11 (or E12 for x8 & x16) set to “0. The extended mode register must be loaded when
all banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating any
subsequent operation. Violating either of these requirements results in unspecified operation. The extended mode
register must be programmed to ensure proper operation.
Temperature-Compensated Self Refresh (TCSR)
TCSR allows the controller to program the refresh interval during self refresh mode, according to the case temperature
of the mobile device. This allows great power savings during self refresh during most operating temperature ranges.
Only during extreme temperatures would the controller have to select a higher TCSR level that will guarantee data
during self refresh.
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
PASR
E2 E1 E0 Partial Array Self Refresh
Coverage
0 0 0 Fully array (4 banks) - (Default)
0 0 1 Half array (banks 0, 1)
0 1 0 Quarter array (bank 0)
0 1 1 Reserved
1 0 0 Reserved
1 0 1 One-eighth array (1/2 bank 0)
1 1 0 One-sixteenth array (1/4 bank 0)
1 1 1 Reserved
TCSR
E4 E3 Max. Case Temp.
0 0 70
o
C
0 1 45
o
C
1 0 15
o
C
1 1 85
o
C (Default)
DS
E6 E5 Driver Strength
0 0 Full strength driver (Default)
0 1 Half strength driver
1 0 Quarter strength driver
1 1 Reserved
set to "0"
E12 E11 E10 E9 E8 E7 E6-E0
0 0 0 0 0 0 Valid Normal operation
All other states reserved
BA1 BA0 Mode Register Denition
0 0 Program Mode Register
0 1 Reserved
1 0 Program Extended mode Register
1 1 Reserved
Address Bus (Ax)
Ext. Mode Reg. (Ex)
Note: A12 x8 and x16, A11 x32

IS42RM16160D-7BL

Mfr. #:
Manufacturer:
ISSI
Description:
DRAM 256M (16Mx16) 143MHz Mobile SDRAM, 2.5v
Lifecycle:
New from this manufacturer.
Delivery:
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