CYRS1542AV18
CYRS1544AV18
Document Number: 001-60006 Rev. *M Page 22 of 34
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Case temperature under power ............... –55 °C to +125 °C
Junction temperature under power ........... –55 °C to +150°C
Supply voltage on V
DD
relative to GND .......–0.5 V to +2.9 V
Supply voltage on V
DDQ
relative to GND ...... –0.5 V to +V
DD
DC applied to outputs in high Z ........–0.5 V to V
DDQ
+ 0.5 V
DC input voltage
[18]
...........................–0.5 V to V
DD
+ 0.5 V
Current into outputs (LOW) ........................................20 mA
Static discharge voltage
(MIL-STD-883, TM. 3015) ......................................> 2001 V
Latch up current .....................................................> 200 mA
Operating Range
Range
Case Temperature
(T
c
) V
DD
[19]
V
DDQ
[19]
Military –55 °C to +125 °C 1.8 ± 0.1 V 1.4 V to V
DD
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Over the Operating Range
Parameter
[20]
Description Test Conditions Min Typ Max Unit
V
DD
Power supply voltage 1.7 1.8 1.9 V
V
DDQ
I/O supply voltage 1.4 1.5 V
DD
V
V
OH
Output high voltage Note 21 V
DDQ
/2 – 0.12 – V
DDQ
/2 + 0.12 V
V
OL
Output low voltage Note 22 V
DDQ
/2 – 0.12 – V
DDQ
/2 + 0.12 V
V
OH(LOW)
Output high voltage I
OH
=0.1 mA, nominal impedance V
DDQ
– 0.2 – V
DDQ
V
V
OL(LOW)
Output low voltage I
OL
= 0.1 mA, nominal impedance V
SS
– 0.2 V
V
IH
Input high voltage V
REF
+ 0.1 – V
DDQ
+ 0.3 V
V
IL
Input low voltage –0.3 – V
REF
– 0.1 V
I
X
Input leakage current GND V
I
V
DDQ
20 – 20 A
I
OZ
Output leakage current GND V
I
V
DDQ,
output disabled 20 – 20 A
V
REF
Input reference voltage
[23]
Typical value = 0.75 V 0.68 0.75 0.95 V
I
DD
[24]
V
DD
operating supply V
DD
= Max,
I
OUT
= 0 mA,
T
J
=125 °C,
f = f
MAX
= 1/t
CYC
250 MHz (× 18) – –1700mA
(× 36) – – 1700
I
SB1
Automatic power down
current
Max V
DD
,
Both ports deselected,
V
IN
V
IH
or V
IN
V
IL
,
f = f
MAX
= 1/t
CYC
,
T
J
= 125 °C,
Inputs static
250 MHz (× 18) – – 660 mA
(× 36) – – 660
Notes
18. Overshoot: V
IH(AC)
< V
DDQ
+ 0.85 V (Pulse width less than t
CYC
/2), Undershoot: V
IL(AC)
> 1.5 V (Pulse width less than t
CYC
/2).
19. Power up: Assumes a linear ramp from 0 V to V
DD(min)
within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
20. All Voltage referenced to ground.
21. Output are impedance controlled. I
OH
= (V
DDQ
/2)/(RQ/5) for values of 175 < RQ < 350 .
22. Output are impedance controlled. I
OL
= (V
DDQ
/2)/(RQ/5) for values of 175 < RQ < 350 .
23. V
REF(min)
= 0.68 V or 0.46 V
DDQ
, whichever is larger, V
REF(max)
= 0.95 V or 0.54 V
DDQ
, whichever is smaller.
24. The operation current is calculated with concurrent read and write cycles.
