LT1976/LT1976B
22
1976bfg
APPLICATIO S I FOR ATIO
WUUU
V
IN
PG
PGFB
LT1976
PG at 80% V
OUT
with 100ms Delay
0.27μF
C
OUT
C
OUT
200k
V
OUT
= 3.3V
153k
12k
100k
FB
C
T
V
IN
PG
PGFB
LT1976
V
OUT
Disconnect at 80% V
OUT
with 100ms Delay
0.27μF
200k
V
OUT
= 3.3V
153k
12k
100k
FB
C
T
V
IN
PG
PGFB
LT1976
PG at V
IN
> 4V with 100ms Delay
0.27μF
V
OUT
= 3.3V
200k
511k
200k
100k
165k
FB
C
T
V
IN
PG
PGFB
LT1976
V
OUT
Disconnect 3.3V Logic Signal
with 100μs Delay
270pF
200k
V
OUT
= 12V
1976 F10
866k
100k
FB
C
T
C
OUT
C
OUT
Figure 10. Power Good Circuits
Figure 9. Power Good
V
OUT
500mV/DIV
PG
100k TO V
IN
V
CT
500mV/DIV
V
SHDN
2V/DIV
TIME (10ms/DIV) 1976 F09
(I
CT
) from the C
T
pin into the external capacitor. When the
voltage on the external capacitor reaches an internal clamp
(V
CT
), the PG pin becomes a high impedance node. The
resultant PG delay time is given by t = C
CT
•(V
CT
)/(I
CT
). If
the voltage on the PGFB pin drops below its V
PGFB
, C
CT
will
be discharged rapidly and PG will be active low with a
200μA sink capability. If the SHDN pin is taken below its
threshold during normal operation, the C
T
pin will be
discharged and PG inactive, resulting in a non Power Good
cycle when SHDN is taken above its threshold. Figure 9
shows the power good operation with PGFB connected to
FB and the capacitance on C
T
= 0.1μF. The PGOOD pin has
a limited amount of drive capability and is susceptible to
noise during start-up and Burst Mode operation. If erratic
operation occurs during these conditions a small filter
capacitor from the PGOOD pin to ground will ensure
proper operation. Figure 10 shows several different con-
figurations for the LT1976 Power Good circuitry.
LT1976/LT1976B
23
1976bfg
APPLICATIO S I FOR ATIO
WUUU
Figure 12. Suggested Layout
NC
R2
C2
C5
R1
R3
C4
SW
NC
V
IN
NC
BOOST
C
T
GND
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
PG
SHDN
SYNC
PGFB
FB
V
C
BIAS
C
SS
1976 F12
C3
GND
GND
D1
L1
V
OUT
C1
C2 D2
MINIMIZE
D1-C3
LOOP
V
IN
KELVIN SENSE
FEEDBACK
TRACE AND
KEEP SEPARATE
FROM BIAS TRACE
CONNECT PIN 8 GND TO THE
PIN 17 EXPOSED PAD GND
PLACE VIA's UNDER EXPOSED
PAD TO A BOTTOM PLANE TO
ENHANCE THERMAL
CONDUCTIVITY
LT1976
Figure 11. High Speed Switching Path
C2 C1
1976 F11
D1
L1
V
IN
LT1976
V
OUT
V
IN
SW
42
HIGH
FREQUENCY
CIRCULATION
PATH
+
LOAD
LAYOUT CONSIDERATIONS
As with all high frequency switchers, when considering
layout, care must be taken in order to achieve optimal
electrical, thermal and noise performance. For maximum
efficiency switch rise and fall times are typically in the
nanosecond range. To prevent noise both radiated and
conducted the high speed switching current path, shown
in Figure 11, must be kept as short as possible. This is
implemented in the suggested layout of Figure 12. Short-
ening this path will also reduce the parasitic trace induc-
tance of approximately 25nH/inch. At switch off, this
parasitic inductance produces a flyback spike across the
LT1976 switch. When operating at higher currents and
input voltages, with poor layout, this spike can generate
voltages across the LT1976 that may exceed its absolute
maximum rating. A ground plane should always be used
under the switcher circuitry to prevent interplane coupling
and overall noise.
The V
C
and FB components should be kept as far away as
possible from the switch and boost nodes. The LT1976
pinout has been designed to aid in this. The ground for
these components should be separated from the switch
current path. Failure to do so will result in poor stability or
subharmonic like oscillation.
LT1976/LT1976B
24
1976bfg
APPLICATIO S I FOR ATIO
WUUU
Board layout also has a significant effect on thermal
resistance. Pin 8 and the exposed die pad, Pin 17, are a
continuous copper plate that runs under the LT1976 die.
This is the best thermal path for heat out of the package.
Reducing the thermal resistance from Pin 8 and exposed
pad onto the board will reduce die temperature and in-
crease the power capability of the LT1976. This is achieved
by providing as much copper area as possible around the
exposed pad. Adding multiple solder filled feedthroughs
under and around this pad to an internal ground plane will
also help. Similar treatment to the catch diode and coil
terminations will reduce any additional heating effects.
THERMAL CALCULATIONS
Power dissipation in the LT1976 chip comes from four
sources: switch DC loss, switch AC loss, boost circuit
current, and input quiescent current. The following formu-
las show how to calculate each of these losses. These
formulas assume continuous mode operation, so they
should not be used for calculating efficiency at light load
currents.
Switch loss:
P
RI V
V
tIVf
SW
SW OUT OUT
IN
EFF OUT IN
=
()( )
+
()
()()()
2
12/
Boost current loss:
P
VI
V
BOOST
OUT OUT
IN
=
()
()
2
36/
Quiescent current loss: (LT1976)
P
Q
= V
IN
(0.0015) + V
OUT
(0.003)
R
SW
= switch resistance (0.3 when hot )
t
EFF
= effective switch current/voltage overlap time
(t
r
+ t
f
+ t
IR
+ t
IF
)
t
r
= (V
IN
/1.7)ns
t
f
= (V
IN
/1.2)ns
t
IR
= t
IF
= (I
OUT
/0.05)ns
f = switch frequency
Example: with V
IN
= 40V, V
OUT
= 5V and I
OUT
= 1A:
Pee
W
PW
PW
SW
BOOST
Q
=
()()()
+
()
()
()( )( )
+=
=
()
()
=
=
()
+
()
=
03 1 5
40
97 9 1 2 1 40 200 3
004 0388 043
5136
40
002
40 0 0015 5 0 003 0 08
2
2
.
–/
.. .
/
.
...
Total power dissipation is:
P
TOT
= 0.43 + 0.02 + 0.08 = 0.53W
Thermal resistance for the LT1976 package is influenced
by the presence of internal or backside planes. With a full
plane under the FE16 package, thermal resistance will be
about 45°C/W. No plane will increase resistance to about
150°C/W. To calculate die temperature, use the proper
thermal resistance number for the desired package and
add in worst-case ambient temperature:
T
J
= T
A
+ Q
JA
(P
TOT
)
With the FE16 package (Q
JA
= 45°C/W) at an ambient
temperature of 70°C:
T
J
= 70 + 45(0.53) = 94°C
If a more accurate die temperature is required, a measure-
ment of the SYNC pin resistance to ground can be used.
The SYNC pin resistance can be measured by forcing a
voltage no greater than 0.25V at the pin and monitoring the
pin current versus temperature in a controlled temperature
environment. The measurement should be done with
minimal device power dissipation (pull the V
C
pin to
ground for sleep mode) in order to calibrate the SYNC pin
resistance with the ambient temperature.

LT1976EFE#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators 1.5A, 200kHz uP HV Step-down Converter
Lifecycle:
New from this manufacturer.
Delivery:
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