MT36HTS51272Y-53EA2

Products and specifications discussed herein are subject to change by Micron without notice.
4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Features
PDF: 09005aef822553c2/Source: 09005aef822553af Micron Technology, Inc., reserves the right to change products or specifications without notice.
HT36HTJ51272.fm - Rev. B 7/06 EN
1 ©2003 Micron Technology, Inc. All rights reserved.
DDR2 SDRAM Registered DIMM (RDIMM)
MT36HTJ51272(P) – 4GB
For the latest data sheet and for component data sheets, refer to Micron's Web site: www.micron.com
Features
Supports 95°C with double refresh
240-pin, registered dual in-line memory module
Fast data transfer rates: PC2-3200, PC2-4200, or
PC2-5300
Supports ECC error detection and correction
•V
DD = VDDQ = +1.8V
•V
DDSPD = +1.7V to +3.6V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4-bit prefetch architecture
DLL to align DQ and DQS transitions with CK
•Dual rank
Multiple internal device banks for concurrent
operation
Programmable CAS# latency (CL)
Posted CAS# additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Programmable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8,192-cycle refresh
On-die termination (ODT)
Serial presence-detect (SPD) with EEPROM
Gold edge contacts
Figure 1: 240-Pin DIMM (MO-237 R/C “K”)
Notes: 1. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
2. Contact Micron for product availability.
Options Marking
•Parity P
•Package
240-pin DIMM (lead-free) Y
Frequency/CAS latency
1
3.0ns @ CL = 5 (DDR2-667)
2
-667
3.75ns @ CL = 4 (DDR2-533) -53E
5.0ns @ CL = 3 (DDR2-400) -40E
•PCB height
30mm (1.18in)
Height: 30mm (1.18in)
Table 1: Key Timing Parameters
Speed
Grade
Industry Nomenclature
Data Rate (MT/s)
t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)
CL = 5 CL = 4 CL = 3
-667 PC2-5300 667 533 400 15 15 55
-53E PC2-4200 533 400 15 15 55
-40E PC2-3200 400 400 15 15 55
Table 2: Addressing
4GB
Refresh count
8K
Row address
16K (A0–A13)
Device bank address
8 (BA0–BA2)
Device page size per bank
1KB
Device configuration
1Gb (256 Meg x 4)
Column address
2K (A0–A9, A11)
Module rank address
2 (S0#, S1#)
PDF: 09005aef822553c2/Source: 09005aef822553af Micron Technology, Inc., reserves the right to change products or specifications without notice.
HT36HTJ51272.fm - Rev. B 7/06 EN
2 ©2003 Micron Technology, Inc. All rights reserved.
4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Pin Assignments and Descriptions
Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT36HTJ51272Y-667C2.
Pin Assignments and Descriptions
Table 3: Part Numbers and Timing Parameters: 4GB Modules
Base device: MT47H256M4, 1Gb DDR2 SDRAM – www.micron.com
Part Number
1
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Latency
(CL -
t
RCD -
t
RP)
MT36HTJ51272(P)Y-667__
4GB 512 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT36HTJ51272(P)Y-53E__
4GB 512 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT36HTJ51272(P)Y-40E__
4GB 512 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Table 4: Pin Assignments
240-Pin RDIMM Front 240-Pin RDIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1V
REF 31 DQ19 61 A4 91 VSS 121 VSS 151 VSS 181 VDDQ 211 DQS14
2V
SS 32 VSS 62 VDDQ 92 DQS5# 122 DQ4 152 DQ28 182 A3 212 DQS14#
3 DQ0 33 DQ24 63 A2 93 DQS5 123 DQ5 153 DQ29 183 A1 213 VSS
4 DQ1 34 DQ25 64 VDD 94 VSS 124 VSS 154 VSS 184 VDD 214 DQ46
5V
SS 35 VSS 65 VSS 95 DQ42 125 DQS9 155 DQS12 185 CK0 215 DQ47
6 DQS0# 36 DQS3# 66 VSS 96 DQ43 126 DQS9# 156 DQS12# 186CK0#216 VSS
7 DQS0 37 DQS3 67 VDD 97 VSS 127 VSS 157 VSS 187 VDD 217 DQ52
8V
SS 38 VSS 68 PAR_IN 98 DQ48 128 DQ6 158 DQ30 188 A0 218 DQ53
9 DQ2 39 DQ26 69 VDD 99 DQ49 129 DQ7 159 DQ31 189 VDD 219 VSS
10 DQ3 40 DQ27 70 A10/AP 100 VSS 130 VSS 160 VSS 190 BA1 220 RFU
11 V
SS 41 VSS 71 BA0 101 SA2 131 DQ12 161 CB4 191 VDDQ221 RFU
12 DQ8 42 CB0 72 VDDQ 102 NC 132 DQ13 162 CB5 192 RAS# 222 VSS
13 DQ9 43 CB1 73 WE# 103 VSS 133 VSS 163 VSS 193 S0# 223 DQS15
14 V
SS 44 VSS 74 CAS# 104 DQS6# 134 DQS10 164 DQS17 194 VDDQ 224 DQS15#
15DQS1#45DQS8#75 VDDQ 105 DQS6 135 DQS10# 165 DQS17# 195 ODT0 225 VSS
16 DQS1 46 DQS8 76 S1# 106 VSS 136 VSS 166 VSS 196 A13 226 DQ54
17 V
SS 47 VSS 77 ODT1 107 DQ50 137 RFU 167 CB6 197 VDD 227 DQ55
18 RESET# 48 CB2 78 VDDQ 108 DQ51 138 RFU 168 CB7 198 VSS 228 VSS
19 NC 49 CB3 79 VSS 109 VSS 139 VSS 169 VSS 199 DQ36 229 DQ60
20 V
SS 50 VSS 80 DQ32 110 DQ56 140 DQ14 170 VDDQ 200 DQ37 230 DQ61
21 DQ10 51 V
DDQ 81 DQ33 111 DQ57 141 DQ15 171CKE1201 VSS 231 VSS
22 DQ11 52 CKE0 82 VSS 112 VSS 142 VSS 172 VDD 202 DQS13 232 DQS16
23 V
SS 53 VDD 83 DQS4# 113 DQS7# 143 DQ20 173 NC 203 DQS13# 233 DQS16#
24 DQ16 54 BA2 84 DQS4 114 DQS7 144 DQ21 174 NC 204 V
SS 234 VSS
25 DQ17 55 ERR_OUT 85 VSS 115 VSS 145 VSS 175 VDDQ 205 DQ38 235 DQ62
26 V
SS 56 VDDQ 86 DQ34 116 DQ58 146 DQS11 176 A12 206 DQ39 236 DQ63
27 DQS2# 57 A11 87 DQ35 117 DQ59 147 DQS11# 177 A9 207 V
SS 237 VSS
28 DQS2 58 A7 88 VSS 118 VSS 148 VSS 178 VDD 208 DQ44 238 VDDSPD
29 VSS 59 VDD 89 DQ40 119 SDA 149 DQ22 179 A8 209 DQ45 239 SA0
30 DQ18 60 A5 90 DQ41 120 SCL 150 DQ23 180 A6 210 V
SS 240 SA1
PDF: 09005aef822553c2/Source: 09005aef822553af Micron Technology, Inc., reserves the right to change products or specifications without notice.
HT36HTJ51272.fm - Rev. B 7/06 EN
3 ©2003 Micron Technology, Inc. All rights reserved.
4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Pin Assignments and Descriptions
Table 5: Pin Descriptions
Symbol Type Description
ODT0, ODT1 Input
(SSTL18)
On-die termination: ODT (registered HIGH) enables termination resistance internal to the
DDR2 SDRAM. When enabled, ODT is only applied to the following pins: DQ, DQS, DQS#, and
CB. The ODT input will be ignored if disabled via the LOAD MODE command.
CK0, CK0# Input
(SSTL18)
Clock: CK and CK# are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and negative edge of CK#. Output data
(DQs and DQS/DQS#) is referenced to the crossings of CK and CK#.
CKE0, CKE1 Input
(SSTL18)
Clock enable: CKE (registered HIGH) activates and CKE (registered LOW) deactivates
clocking circuitry on the DDR2 SDRAM.
S0#, S1# Input
(SSTL18)
Chip select: S# enables (registered LOW) and disables (registered HIGH) the command
decoder.
RAS#, CAS#,
WE#
Input
(SSTL18)
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.
BA0–BA2 Input
(SSTL18)
Bank address inputs: BA0–BA2 define to which device bank an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA0–BA2 define which mode register, including MR,
EMR, EMR(2), and EMR(3), is loaded during the LOAD MODE command.
A0–A13 Input
(SSTL18)
Address inputs: Provide the row address for ACTIVE commands, and the column address
and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the
memory array in the respective bank. A10 sampled during a PRECHARGE command
determines whether the PRECHARGE applies to one device bank (A10 LOW, device bank
selected by BA0–BA2) or all device banks (A10 HIGH). The address inputs also provide the op-
code during a LOAD MODE command.
P
AR_IN Input
(SSTL18)
Parity bit for the address and control bus.
SCL Input
Serial clock for presence-detect: SCL is used to synchronize the presence-detect data
transfer to and from the module.
SA0–SA2 Input
Presence-detect address inputs: These pins are used to configure the presence-detect
device.
RESET# Input
(LVCMOS)
Asynchronously forces all registered outputs LOW when RESET# is LOW. This signal can be
used during power up to ensure that CKE is LOW and DQs are High-Z.
DQS0–DQS17,
DQS0#–DQS17#
I/O
(SSTL18)
Data strobe: Output with read data, input with write data for source synchronous
operation. Edge-aligned with read data, center-aligned with write data. DQS# is only used
when differential data strobe mode is enabled via the LOAD MODE command.
DQ0–DQ63 I/O
(SSTL18)
Data input/output: Bidirectional data bus.
CB0–CB7 I/O
(SSTL18)
Check bits.
SDA I/O
Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data
into and out of the presence-detect portion of the module.
E
RR_OUT Output
(open
drain)
Parity error found on the address and control bus.
V
DD Supply
Power supply: 1.8V ±0.1V.
V
DDQ Supply
DQ power supply: 1.8V ±0.1V.
V
REF Supply
SSTL_18 reference voltage.
V
SS Supply
Ground.
V
DDSPD Supply
Serial EEPROM positive power supply: +1.7V to +3.6V.

MT36HTS51272Y-53EA2

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 4GB 240FBDIMM
Lifecycle:
New from this manufacturer.
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