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TEF6730AHW/V1,557

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P45P46-P48P49-P51P52-P54P55-P57P58-P58
TEF6730A_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 21 February 2007 34 of 58
NXP Semiconductors
TEF6730A
Front-end for digital-IF car radio
∆G
m(conv)(T)
conversion
transconductancegain
deviation over
temperature
T
amb
= −40 °C to +85 °C;
see
Figure 20
---dB
IP3 third-order intercept
point
R
L
= 2.6 kΩ (AC load between
output pins); ∆f = 300 kHz
135 138 - dBµV
IP2 second-order intercept
point
R
L
= 2.6 kΩ (AC load between
output pins)
- 170 - dBµV
V
n(i)(eq)
equivalent input noise
voltage
band limited noise;
R
source
= 750 Ω; noise of
R
source
included; R
L
= 2.6 kΩ
(AC load between output pins)
- 7.2 10 nV/√Hz
NF noise figure - 6.2 9 dB
FM channel
FM RF AGC (FM distance mode; data byte AGC bit LODX = 0)
Input: pins FMMIXIN1 and FMMIXIN2
[8]
V
i(FMMIXIN)(RMS)
RMS input voltage
between
pin FMMIXIN1 and
pin FMMIXIN2
start level of wideband AGC;
keyed AGC off; data byte AGC
bit KAGC = 0; see
Table 24
and
Table 25
data byte AGC bits
WBAGC[1:0] = 11
5 9 15 mV
data byte AGC bits
WBAGC[1:0] = 10
71219mV
data byte AGC bits
WBAGC[1:0] = 01
10 17 27 mV
data byte AGC bits
WBAGC[1:0] = 00
14 24 38 mV
start level of wideband AGC;
keyed AGC on; data byte AGC
bit KAGC = 1;
V
KAGC
>V
th(KAGC)
data byte AGC bits
WBAGC[1:0] = 11
19 30 48 mV
data byte AGC bits
WBAGC[1:0] = 10
21 33 52 mV
data byte AGC bits
WBAGC[1:0] = 01
24 38 60 mV
data byte AGC bits
WBAGC[1:0] = 00
28 45 71 mV
Table 36. Dynamic characteristics
…continued
V
CCA
= 8.5 V; T
amb
=25
°
C; see Figure 25; all AC values are given in RMS; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
TEF6730A_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 21 February 2007 35 of 58
NXP Semiconductors
TEF6730A
Front-end for digital-IF car radio
FM RF AGC narrow-band detector: pins IFOUT1 and IFOUT2
V
o(IFOUT)(M)
peak output voltage
between pin IFOUT1
and pin IFOUT2
start level of narrow-band
AGC; data byte CONTROL bit
IFGAIN = 0;
V
IFAGCMSB
= HIGH;
V
IFAGCLSB
=LOW;
see
Table 15
data byte CONTROL bits
NBAGC[1:0] = 00
490 700 980 mV
data byte CONTROL bits
NBAGC[1:0] = 01
390 560 780 mV
data byte CONTROL bits
NBAGC[1:0] = 10
315 450 630 mV
data byte CONTROL bits
NBAGC[1:0] = 11
245 350 490 mV
PIN diode drive output: pin IFMAGC
I
source(max)
maximum source
current
V
TFMAGC
=V
IFMAGC
+ 1.4 V;
data byte AGC bit KAGC = 0
−16 −10 −7mA
I
sink(max)
maximum sink current at AGC decay;
V
TFMAGC
=V
IFMAGC
; data byte
AGC bit KAGC = 0
71016mA
I
source
source current AM mode; data byte DAA bit
AGCSW = 1
- −1.2 - mA
AM mode; data byte DAA bit
AGCSW = 0
-0-mA
data byte AGC bit LODX = 1
(FM local)
−0.75 −0.5 −0.35 mA
V
IFMAGC
voltage on
pin IFMAGC
voltage at PIN diode drive
output; V
FMMIXIN1
<V
th
- 100 300 mV
V
th(KAGC)
threshold voltage on
pin KAGC
threshold level voltage for
narrow-band AGC (keyed
AGC); data byte AGC bit
KAGC = 1; see
Table 15 and
Table 23
500 950 1400 mV
FM mixer (IF = 10.7 MHz)
FM RF input: pins FMMIXIN1 and FMMIXIN2
[8]
V
i(RF)(max)
maximum RF input
voltage
1 dB compression point of
FM mixer output voltage
75 100 - mV
V
n(i)(eq)
equivalent input noise
voltage
R
source
= 500 Ω; noise of
R
source
included; R
L
= 2.6 kΩ
(on output pins FMMIXOUT1
and FMMIXOUT2)
RFGAIN = 0 - 4.7 6.4 nV/√Hz
RFGAIN = 1 - 4.2 - nV/√Hz
R
i
input resistance RFGAIN = 0 3 3.8 4.7 kΩ
RFGAIN = 1 1.6 2.0 2.5 kΩ
Table 36. Dynamic characteristics
…continued
V
CCA
= 8.5 V; T
amb
=25
°
C; see Figure 25; all AC values are given in RMS; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
TEF6730A_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 21 February 2007 36 of 58
NXP Semiconductors
TEF6730A
Front-end for digital-IF car radio
C
i
input capacitance - 2 4 pF
G
m(conv)
conversion
transconductance gain
I
o
/V
i
; RF gain 1; data byte
PLLM bit RFGAIN = 0
12 18 25 mA/V
I
o
/V
i
; RF gain 2; data byte
PLLM bit RFGAIN = 1
24 36 50 mA/V
∆G
m(conv)(T)
conversion
transconductancegain
deviation over
temperature
T
amb
= −40 °C to +85 °C;
see
Figure 21
---dB
NF noise figure R
source
= 500 Ω; T
amb
=25°C
RFGAIN = 0 - 4.2 5.7 dB
RFGAIN = 1 - 3.2 4.7 dB
IP3 third-order intercept
point
RFGAIN = 0 117 123 - dBµV
RFGAIN = 1 108 114 - dBµV
IRR image rejection ratio V
o(wanted)
/V
o(image)
;
f
RF(wanted)
= 87.5 MHz;
f
RF(image)
= 108.9 MHz
25 40 - dB
Output: pins FMMIXOUT1 and FMMIXOUT2
[9]
R
o
output resistance 100 - - kΩ
C
o
output capacitance - 4 6 pF
V
o(p-p)(max)
maximum
peak-to-peak output
voltage
4.5 5.6 - V
FM weather band input: pins WXMIXIN and WXMIXDEC
G
m(conv)
conversion
transconductance gain
I
o
/V
i
10 15 21 mA/V
∆G
m(conv)(T)
conversion
transconductancegain
deviation over
temperature
T
amb
= −40 °C to +85 °C;
see
Figure 22
---dB
R
i
input resistance - 5.1 - kΩ
C
i
input capacitance - 2 4 pF
NF noise figure R
source
= 300 Ω - 3.5 5 dB
IP3 third-order intercept
point
- 116 - dBµV
IRR image rejection ratio V
o(wanted)
/V
o(image)
;
f
RF(wanted)
= 162.475 MHz;
f
RF(image)
= 183.875 MHz
20 33 - dB
IF AGC amplifier
AM mode; inputs: pins AMIFAGCIN and IFAGCDEC
[10]
; outputs: pins IFOUT1 and IFOUT2
[11]
R
i
input resistance - 100 - kΩ
C
i
input capacitance - 5 7 pF
R
o
output resistance 120 210 290 Ω
Table 36. Dynamic characteristics
…continued
V
CCA
= 8.5 V; T
amb
=25
°
C; see Figure 25; all AC values are given in RMS; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P45P46-P48P49-P51P52-P54P55-P57P58-P58

TEF6730AHW/V1,557

Mfr. #:
Buy TEF6730AHW/V1,557
Manufacturer:
NXP Semiconductors
Description:
RF RECEIVER AM/FM/WB 64HTQFP
Lifecycle:
New from this manufacturer.
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