Application Information VN5016AJ-E
22/32
3 Application Information
Figure 26. Application schematic
3.1 GND protection network against reverse battery
3.1.1 Solution 1 : resistor in the ground line (R
GND
only)
This can be used with any type of load.
The following is an indication on how to dimension the R
GND
resistor.
1. R
GND
600mV / (I
S(on)max
).
2. R
GND
V
CC
) / (-I
GND
)
where -I
GND
is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power Dissipation in R
GND
(when V
CC
<0: during reverse battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND
will produce a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
GND
.
V
CC
GND
OUTPUT
D
GND
R
GND
D
ld
µC
+5V
V
GND
CS_DIS
INPUT
R
prot
R
prot
CURRENT SENSE
R
SENSE
R
prot
C
ext
VN5016AJ-E Application Information
23/32
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
3.1.2 Solution 2 : diode (D
GND
) in the ground line
A resistor (R
GND
=1kshould be inserted in parallel to D
GND
if the device drives an
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
3.2 Load dump protection
D
ld
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
CC
max DC rating. The same applies if the device is subject to transients on the V
CC
line
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the V
CC
line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prot
) in line to
prevent the
µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of
µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
µC
I/Os.
-V
CCpeak
/I
latchup
R
prot
(V
OHµC
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= - 100V and I
latchup
20mA; V
OHµC
4.5V
5k R
prot
180k.
Recommended values: R
prot
=10kC
EXT
=10nF.
Application Information VN5016AJ-E
24/32
3.4 Maximum demagnetization energy (V
CC
= 13.5V)
Figure 27. Maximum turn Off current versus load inductance
Note: Values are generated with R
L
=0 
In case of repetitive pulses, T
jstart
(at beginning of each demagnetization) of every pulse
must not exceed the temperature specified above for curves B and C.
V
IN
, I
L
t
Demagnetization
Demagnetization
Demagnetization
1
10
100
0,1 1 10 100L (mH)
I (A)
C: T
jstart
= 125°C repetitive pulse
A: T
jstart
= 150°C single pulse
B: T
jstart
= 100°C repetitive pulse
A
B
C

VN5016AJTR-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Sngl Ch HiSide Drivr
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet