VN5016AJ-E Electrical specifications
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2 Electrical specifications
Figure 3. Current and voltage conventions
Note: V
Fn
= V
OUTn
- V
CC
during reverse battery condition.
2.1 Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in this section for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality documents.
I
S
I
GND
V
CC
V
CC
V
SENSE
OUTPUT
I
OUT
CURRENT SENSE
I
SENSE
INPUT
I
IN
V
IN
V
OUT
GND
CS_DIS
I
CSD
V
CSD
V
F
Table 4. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
DC supply voltage 41 V
-V
CC
Reverse DC supply voltage 0.3 V
-I
GND
DC reverse ground pin current 200 mA
I
OUT
DC output current Internally limited A
-I
OUT
Reverse DC output current 30 A
I
IN
DC input current -1 to 10 mA
I
CSD
DC current sense disable input current -1 to 10 mA
-I
CSENSE
DC reverse CS pin current 200 mA
V
CSENSE
Current sense maximum voltage
V
CC
-41
+V
CC
V
V
E
MAX
Maximum switching energy
(L=0.75mH; R
L
=0; V
bat
=13.5V; T
jstart
=150ºC;
I
OUT
= I
limL
(Typ.) )
304 mJ
Electrical specifications VN5016AJ-E
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2.2 Thermal data
V
ESD
Electrostatic discharge (Human Body Model: R=1.5K
C=100pF)
- INPUT
- CURRENT SENSE
- CS_DIS
- OUTPUT
- V
CC
4000
2000
4000
5000
5000
V
V
V
V
V
V
ESD
Charge device model (CDM-AEC-Q100-011) 750 V
T
j
Junction operating temperature -40 to 150 °C
T
stg
Storage temperature -55 to 150 °C
Table 4. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Table 5. Thermal data
Symbol Parameter Max value Unit
R
thj-case
Thermal resistance junction-case 0.5 °C/W
R
thj-amb
Thermal resistance junction-ambient See Figure 29 °C/W
VN5016AJ-E Electrical specifications
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2.3 Electrical characteristics
8V<V
CC
<36V; -40°C<T
j
<150°C, unless otherwise specified.
.
Table 6. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply voltage 4.5 13 36 V
V
USD
Undervoltage shutdown 3.5 4.5 V
V
USDhyst
Undervoltage Shut-down
hysteresis
0.5 V
R
ON
On state resistance
I
OUT
= 5A; T
j
= 25°C
I
OUT
= 5A; T
j
= 150°C
I
OUT
= 5A; V
CC
= 5V; T
j
= 25°C
16
32
20
m
m
m
V
clamp
Clamp voltage I
S
= 20mA 41 46 52 V
I
S
Supply current
Off State; V
CC
=13V; T
j
=25°C;
V
IN
=V
OUT
=V
SENSE
=V
CSD
=0V
On State; V
CC
=13V; V
IN
=5V;
I
OUT
=0A
2
(1)
1.5
(1) PowerMOS leakage included.
5
(1)
3
µA
mA
I
L(off)
Off state output current
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
=25°C
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
=125°C
0
0
0.01 3
5
µA
V
F
Output - V
CC
diode
voltage
I
OUT
= 6A; T
j
= 150°C 0.7 V
Table 7. Switching (V
CC
=13V, T
j
=25°C)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-On delay time R
L
= 2.6 (see Figure 8)35µs
t
d(off)
Turn-Off delay time R
L
= 2.6(see Figure 8)50µs
(dV
OUT
/dt)
on
Turn-On voltage slope R
L
= 2.6(see Figure 8)See Figure 20 Vµs
(dV
OUT
/dt)
off
Turn-Off voltage slope R
L
= 2.6(see Figure 8)See Figure 22 Vµs
W
ON
Switching energy losses
during t
won
R
L
= 2.6(see Figure 8)1.1mJ
W
OFF
Switching energy losses
during t
woff
R
L
= 2.6(see Figure 8)0.8mJ

VN5016AJTR-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Sngl Ch HiSide Drivr
Lifecycle:
New from this manufacturer.
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