4
FN6831.0
February 4, 2009
ISEN Input Leakage Current (Note 3) EN = GND - 0.1 - µA
PROTECTION
OCSET Input Impedance (Note 3) EN = V
CC
- 600 - kΩ
OCSET Input Leakage Current (Note 3) EN = GND - 0.1 - µA
OCSET Current Source EN = V
CC
9 10.0 10.5 µA
OCP (V
OCSET
-V
ISEN
) Threshold -1.75 0.0 1.75 mV
UVP Threshold Falling edge, referenced to FB 81 84 87 %
OVP Threshold Rising edge, referenced to FB 113 116 120 %
Falling edge, referenced to FB 99.5 103 106 %
OTP Threshold (Note 3) Rising edge - 150 - °C
Falling edge - 135 - °C
NOTES:
3. Limits established by characterization and are not production tested.
4. F
SW
accuracy reflects IC tolerance only; it does not include frequency variation due to V
IN
, V
OUT
, L
OUT
, ESR
COUT
, or other application specific
parameters.
Electrical Specifications These specifications apply for T
A
= -10°C to +100°C, unless otherwise noted. Typical values are at T
A
= +25°C,
V
IN
= 12V; Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified.
Temperature limits established by characterization and are not production tested. (Continued)
PARAMETER CONDITIONS MIN TYP MAX UNITS
ISL62386
