Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
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Team Nexperia
LFPAK56D
PHPT610030NPK
NPN/PNP high power double bipolar transistor
14 October 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-
Mounted Device (SMD) power plastic package.
NPN/NPN complement: PHPT610030NK.
PNP/PNP complement: PHPT610030PK.
2. Features and benefits
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Motor control
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CEO
collector-emitter
voltage
open base - - 100 V
I
C
collector current - - 3 A
TR1 (NPN)
R
CEsat
collector-emitter
saturation resistance
I
C
= 3 A; I
B
= 300 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- 75 110
NXP Semiconductors
PHPT610030NPK
NPN/PNP high power double bipolar transistor
PHPT610030NPK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 14 October 2014 2 / 19
Symbol Parameter Conditions Min Typ Max Unit
TR2 (PNP)
R
CEsat
collector-emitter
saturation resistance
I
C
= -2 A; I
B
= -200 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- 110 180
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 E1 emitter TR1
2 B1 base TR1
3 E2 emitter TR2
4 B2 base TR2
5 C2 collector TR2
6 C2 collector TR2
7 C1 collector TR1
8 C1 collector TR1
321 4
678 5
LFPAK56D (SOT1205)
sym139
B1
E1
C2
B2C1
TR1
TR2
E2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PHPT610030NPK LFPAK56D Plastic single ended surface mounted package (LFPAK56D); 8
leads
SOT1205
7. Marking
Table 4. Marking codes
Type number Marking code
PHPT610030NPK 1003NPK

PHPT610030NPKX

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN/PNP high power double bipolar trans
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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