NXP Semiconductors
PHPT610030NPK
NPN/PNP high power double bipolar transistor
PHPT610030NPK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 14 October 2014 3 / 19
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
collector-base voltage open emitter - 100 V
V
CEO
collector-emitter voltage open base - 100 V
V
EBO
emitter-base voltage open collector - 7 V
I
C
collector current - 3 A
I
CM
peak collector current single pulse; t
p
≤ 1 ms - 8 A
I
B
base current - 0.5 A
T
amb
≤ 25 °C [1] - 1 W
[2] - 2.4 W
P
tot
total power dissipation
T
amb
≤ 25 °C
[3] - 25 W
Per device
[1] - 1.25 W
[2] - 3 W
P
tot
total power dissipation T
amb
≤ 25 °C
[4] - 5 W
T
j
junction temperature - 175 °C
T
amb
ambient temperature -55 175 °C
T
stg
storage temperature -65 175 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[3] Power dissipation from junction to mounting base.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
