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PHPT610030NPKX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
NXP Semiconductors
PHPT610030NPK
NPN/PNP high power double bipolar transistor
PHPT610030NPK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 14 October 2014 12 / 19
11. Test information
006aaa003
I
Bon
(100 %)
I
B
input pulse
(idealized waveform)
I
Boff
90 %
10 %
I
C
(100 %)
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
Fig. 20. TR1 (NPN): BISS transistor switching time definition
R
C
R2
R1
DUT
mlb826
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
Fig. 21. TR1 (NPN): Test circuit for switching times
NXP Semiconductors
PHPT610030NPK
NPN/PNP high power double bipolar transistor
PHPT610030NPK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 14 October 2014 13 / 19
006aaa266
-
I
Bon
(100 %)
-
I
B
input pulse
(idealized waveform)
-
I
Boff
90 %
10 %
-
I
C
(100 %)
-
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
Fig. 22. TR2 (PNP): BISS transistor switching time definition
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
Fig. 23. TR2 (PNP): Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
NXP Semiconductors
PHPT610030NPK
NPN/PNP high power double bipolar transistor
PHPT610030NPK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 14 October 2014 14 / 19
12. Package outline
References
Outline
version
European
projection
Issue date
IEC JEDEC JEITA
SOT1205
sot1205_po
13-02-21
14-08-21
Unit
mm
max
nom
min
1.05 0.1
0.0
4.4
4.1
0.25
0.19
0.30
0.24
4.70
4.45
3.5
5.30
4.95
0.85 0.85
0.40
A
Dimensions
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
Plastic single ended surface mounted package LFPAK56D; 8 leads SOT1205
A
1
b
0.50
0.35
b
1
c c
1
D
(1)
0.1
8
°
0
°
y θD
1
(1)
4.8
D
2
(ref)
E
(1)
E
1
(1)
1.8
1.6
E
2
e
1.27
H
6.2
5.9
L
1.3
0.8
L
1
0.55
0.30
L
p
0.25
w
0 2.5 5 mm
scale
detail X
A
1
C
L
p
θ
C
y
E
2
D
2
E
1
D
1
mounting
base
c
X
A
c
1
A
e
b
(8x)
w A
D
E
H
L
L
1
b
1
1 2 3 4
Fig. 24. Package outline LFPAK56D (SOT1205)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

PHPT610030NPKX

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN/PNP high power double bipolar trans
Lifecycle:
New from this manufacturer.
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